Electronic States of Grain Boundaries in Bicrystal Silicon

1982 ◽  
Vol 14 ◽  
Author(s):  
C. M. Shyu ◽  
L. J. Cheng ◽  
K. L. Wang
Keyword(s):  
Density Of States ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electronic States ◽  
Boundary Plane ◽  
Tilt Boundary ◽  
Electrical Measurements ◽  
Transient Spectroscopy ◽  
A Minor ◽  
P Type

ABSTRACTElectronic states at a 20° symmetrical(100) tilt boundary in p-type silicon were studied using deep level transient spectroscopy (DLTS) and other electrical measurements. The data can be explained with a model in which the local barrier height at the grain boundary varies on a scale much smaller than the boundary plane (∼I mm2) under study. Based on a relationship between the carrier capture cross section and energy level deduced from the experimental data, we have been able to calculate the distribution of the density of states in the energy bandgap at the boundary, which contains two groups of continuously distributed states; a major one whose density of states increases monotonically with the position of the state from the valance band, and a minor narrow one whose density of states is centered at Ev,+0.20 eV.

Interface Defects and Rectification Properties of Heterojunctions Between Solid C60 and GaAs

1998 ◽  
Vol 510 ◽  
Author(s):  
K.M. Chen ◽  
Y.X. Zhang ◽  
S.X. Jin ◽  
K. Wu ◽  
H.F. Liu
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electronic States ◽  
Electron Trap ◽  
The Other ◽  
Vacuum Deposition ◽  
Interface Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
C60 Films

AbstractSolid C60/GaAs contacts were fabricated by growing solid C60 films on both n-type and p-type GaAs(100) substrates through vacuum deposition. The electronic states at C60/GaAs interfaces were studied. Both C60/n-GaAs and C60/p-GaAs contacts were found to be strong rectification junctions with a rectifying ratio higher than 106 at a bias of ± 1.OV. Two distinct traps were also observed at the C60/GaAs interfaces with deep level transient spectroscopy (DLTS); one is the electron trap at 0.35 eV below the GaAs conduction band and the other is a hole trap at 0.45 eV above the GaAs valence band.

scholarly journals Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 279-284 ◽  
Author(s):  
O.F. Vyvenko ◽  
N.V. Bazlov ◽  
M.V. Trushin ◽  
A.A. Nadolinski ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Hydrogen ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Extended Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
Plasma Hydrogenation ◽  
Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 759-762
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Michael Krieger ◽  
Tsunenobu Kimoto
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Deep Levels ◽  
Total Density ◽  
Ion Etching ◽  
Initial Concentration ◽  
Grown Sample ◽  
Transient Spectroscopy ◽  
P Type

In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of as-etched p-type SiC is remarkably small due to compensation or deactivation of acceptors. These acceptors can be recovered to the initial concentration of the as-grown sample after annealing at 1000oC. However, various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC. The following defects are detected by Deep Level Transient Spectroscopy (DLTS): IN2 (EC – 0.35 eV), EN (EC – 1.6 eV), IP1 (EV + 0.35 eV), IP2 (HS1: EV + 0.39 eV), IP4 (HK0: EV + 0.72 eV), IP5 (EV + 0.75 eV), IP7 (EV + 1.3 eV), and EP (EV + 1.4 eV). These defects generated by RIE can be significantly reduced by thermal oxidation and subsequent annealing at 1400oC.

Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

2012 ◽  
Vol 9 (10-11) ◽  
pp. 1992-1995 ◽  
Author(s):  
C. K. Tang ◽  
L. Vines ◽  
B. G. Svensson ◽  
E. V. Monakhov
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Point Defects in Gallium Arsenide Characterized by Positron Annihilation Spectroscopy and Deep Level Transient Spectroscopy

1994 ◽  
Vol 373 ◽  
Author(s):  
R. Mih ◽  
R. Gronsky
Keyword(s):  
Gallium Arsenide ◽  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Czochralski Method ◽  
Positron Annihilation Spectroscopy ◽  
Crystallographic Data ◽  
Electrical Measurements ◽  
Vacancy Defects ◽  
Transient Spectroscopy

AbstractPositron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. We present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot- Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data.

Electrical Properties of Clustered and Precipitated Iron in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 109-114
Author(s):  
R. Khalil ◽  
Vitaly V. Kveder ◽  
Wolfgang Schröter ◽  
Michael Seibt
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Iron Silicide ◽  
Electronic States ◽  
Moderate Temperature ◽  
Extended Defects ◽  
Characteristic Features ◽  
Transient Spectroscopy ◽  
The Stability

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

Investigation of the CaF2/p-type Si(100) interface by conductance and deep level transient spectroscopy

1991 ◽  
Vol 34 (8) ◽  
pp. 867-873 ◽  
Author(s):  
G. Couturier ◽  
H. Ricard ◽  
A. Thabti ◽  
A.S. Barrière ◽  
H. Ishiwara
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document