X-Ray Section Topography of Hydrogen Precipitates in Silicon

1988 ◽  
Vol 138 ◽  
Author(s):  
S.F. Cui ◽  
G.S. Green ◽  
B.K. Tanner
Keyword(s):  
X Ray ◽  
2006 ◽  
Vol 13 (6) ◽  
pp. 484-488 ◽  
Author(s):  
Taihei Mukaide ◽  
Kentaro Kajiwara ◽  
Takashi Noma ◽  
Kazuhiro Takada

1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
L. K. Cheng ◽  
J. D. Bierlein

ABSTRACTDefect structures in large, high quality flux-grown KTP single crystals have been studied by using synchrotron white beam X-ray topography. Growth dislocations, inclusions, growth sector boundaries, growth bands and surface micro-scratches were imaged. A number of planar defects in the dislocation-free region are imaged and determined to be inversion twin lamellae (lamellar ferroelectric domains) which have never been previously reported in KTP crystals. These inversion twin lamellae were also studied by section topography. Detailed analysis of observed contrast revealed that the domain walls bounding the lamellae are faulted with a fault vector of ½[0±1±1]. This fault vector seems to be consistent with the atomic structure of KTP. A detailed analysis is presented and discussed.


1984 ◽  
Vol 40 (a1) ◽  
pp. C324-C324
Author(s):  
K. Ishida ◽  
Y. Kobayashi ◽  
H. Katoh ◽  
S. Takagi
Keyword(s):  
X Ray ◽  

2007 ◽  
Vol 40 (3) ◽  
pp. 505-512 ◽  
Author(s):  
D. Walker ◽  
P. A. Thomas ◽  
P. Pernot-Rejmánková ◽  
J. Baruchel

Recent work on the non-linear optical single-crystal rubidium titanyl arsenate (RbTiOAsO4, RTA) has shown that it exhibits behaviour consistent with a ferroelectric semiconductor under large applied electric fields, with the development of a non-uniform field in the near-surface region. To confirm aspects of the proposed model, the behaviour of 001 slices of initially single-domain RTA, patterned with periodic Ag electrodes of spacing 38 µm, as for periodic poling in non-linear optics, were investigated using synchrotron X-ray section topography with the electric field appliedin situwhile under X-ray illumination at the ID19 topography beamline of the ESRF, Grenoble. The results of white-beam section topography as both a function of crystal to film distance, and under DC voltage are reported, confirming that there is a bending of the planes in the near-surface region. The strain in the near-surface region was examined directly using high-resolution monochromatic X-ray section topography. This revealed an extensive strain of 3 (±1) × 10−4at 1 kV, indicating that the electrostrictive coefficient, γ3333, in RTA is positive in sign.


2015 ◽  
Vol 71 (5) ◽  
pp. 519-525 ◽  
Author(s):  
V. G. Kohn ◽  
I. A. Smirnova

The results of theoretical and experimental study are presented for the question of how the X-ray multiple diffraction in a silicon single crystal influences the interference fringes of section topography for the 400 reflection in the Laue case. Two different cases of multiple diffraction are discovered for zero and very small values of the azimuthal angle for the sample in the form of a plate with the surface normal to the 001 direction. The cases are seen on the same topogram without rotation of the crystal. Accurate computer simulations of the section topogram for the case of X-ray multiple diffraction are performed for the first time. It is shown that the structure of interference fringes on the section topogram in the region of multiple diffraction becomes more complicated. It has a very sharp dependence on the azimuthal angle. The experiment is carried out using a laboratory source under conditions of low resolution over the azimuthal angle. Nevertheless, the characteristic inclination of the interference fringes on the tails of the multiple diffraction region is easily seen. This phenomenon corresponds completely to the computer simulations.


1983 ◽  
Vol 2 (3) ◽  
pp. 111-114
Author(s):  
K. Naukkarinen ◽  
M. Blomberg

1982 ◽  
Vol 71 (2) ◽  
pp. 611-617 ◽  
Author(s):  
G. Kowalski ◽  
J. Gronkowski
Keyword(s):  
X Ray ◽  

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