The Deposition of Metallic and Non-Metallic Thin Films Through the Use of Boron Clusters.

1988 ◽  
Vol 131 ◽  
Author(s):  
Zhongju Zhang ◽  
Yoon-Gi Kim ◽  
P. A. Dowben ◽  
James T. Spencer

ABSTRACTNew borane clusters and their corresponding transition and rare earth metal complexes are currently being investigated in our laboratories for their utility as unique source materials for the formation of both metallic and non-metallic thin films. These borane cluster complexes exhibit highly favorable properties for use in OMVPE processes, such as; (1) relatively high volatility, (2) anticipated high stability of the ligand itself to provide clean ligand-metal dissociations, (3) high temperature stabilities of the complexes, (4) readily preparable in significant quantities, and (5) availability of theoretical and spectroscopic probes of structure-reactivity relationships. In this work, we have prepared both non-metallic thin films, including materials such as boron nitride, and metallic thin films (both the transition and rare earth metals) through the use of these unique cluster materials.Boron nitride has been investigated as a potential hard coating for use as an insulating electrical layer and protective coating. We have investigated plasma enhanced chemical vapor deposition and pyrolytic deposition of boron nitride from readily available and easily handled borane clusters. Auger electron spectroscopy was used to show that the film was high purity boron nitride of uniform composition.The deposition of transition and rare earth metal thin-film materials of controlled stoichiometry has recently received considerable interest. We have discovered the borane cluster-assisted deposition (CAD) of metallic thin-films involving both transition and rare earth metal materials. Through the use of this unprecedented borane cluster chemical transport process, films ranging in thickness from 100 nm to several microns have been straightforwardly and systematically prepared for numerous metal and mixed-metal boroncontaining systems with controlled composition at relatively low temperatures. These new materials have been characterized by SEM and other techniques.

1991 ◽  
Vol 250 ◽  
Author(s):  
Shreyas Kher ◽  
James T. Spencer

AbstractSeveral borane cluster compounds, such as pentaborane(9) and their corresponding metal complexes have been investigated in our laboratory for their utility as unique source materials for synthesizing metal/metal boride thin films by MOCVD. In this paper we report the preparation of thin films of nickel boride from the thermal decomposition of nido- pentaborane( 9) in the presence of anhydrous nickel chloride [NiCl2] in the vapor phase. Crystalline nickel boride thin films of controlled composition ranging from 0.1 to several microns have been readily prepared by controlling the temperature and the flow rate of the pentaborane(9) into the reaction chamber. The nickel boride films on GaAs were thermally annealed to form the Ni7B3 phase as hexagonal crystals in a Ni3B matrix. These films have been characterized by AA, AES, EDXA, SEM, XRD and electron diffraction. The phases were determined primarily by X-ray and electron diffraction experiments.


1988 ◽  
Vol 33-34 ◽  
pp. 286-291 ◽  
Author(s):  
Tsuyoshi Arakawa ◽  
Nobuya Suezawa ◽  
Gin-ya Adachi ◽  
Jiro Shiokawa

1988 ◽  
Vol 145 (2) ◽  
pp. 327-330 ◽  
Author(s):  
Tsuyoshi Arakawa ◽  
Shinji Shimada ◽  
Gin-Ya Adachi ◽  
Jiro Shiokawa

1986 ◽  
Vol 141 (2) ◽  
pp. 277-285 ◽  
Author(s):  
V.M. Koleshko ◽  
V.F. Belitsky ◽  
A.A. Khodin

2016 ◽  
Vol 16 (9) ◽  
pp. 5260-5267 ◽  
Author(s):  
Aida Jamil ◽  
Johannes Schläfer ◽  
Yakup Gönüllü ◽  
Ashish Lepcha ◽  
Sanjay Mathur

2020 ◽  
Vol 49 (5) ◽  
pp. 3114-3123
Author(s):  
Zohra Nazir Kayani ◽  
Tehreem Chaudhry ◽  
Saira Riaz ◽  
Shahzad Naseem

2015 ◽  
Vol 41 (10) ◽  
pp. 15138-15144 ◽  
Author(s):  
Chinnambedu Murugesan Raghavan ◽  
Jin Won Kim ◽  
Ji Ya Choi ◽  
Tae Kwon Song ◽  
Sang Su Kim

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