Instability of The Electron-Hole Plasma and its Possible Relation With Melting

1983 ◽  
Vol 13 ◽  
Author(s):  
Monique Combescot ◽  
Julien Bok
Keyword(s):  
Laser Pulse ◽  
Melting Temperature ◽  
Phonon Mode ◽  
Substantial Decrease ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma

ABSTRACTWe show that the softening of the T.A. phonon mode produces an instability in the electron-hole plasma of a silicon-like semiconductor and suggest that this instability can be the mechanism for melting of this type of material. This allows us to estimate the characteristics of a laser pulse which are necessary to modify the usual melting, i.e. which would lead to a substantial decrease of the melting temperature.

High field domain in electron–hole plasma of germanium

1973 ◽  
Vol 15 (2) ◽  
pp. 711-720 ◽  
Author(s):  
V. N. Dobrovolskii ◽  
M. N. Vinoslavskii ◽  
O. S. Zinets
Keyword(s):  
High Field ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma

Instability of the electron-hole plasma in covalent semiconductors

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1014-1016
Author(s):  
M. Combescot ◽  
J. Bok
Keyword(s):  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma

scholarly journals Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN

1997 ◽  
Vol 2 ◽  
Author(s):  
J.-Chr. Holst ◽  
L. Eckey ◽  
A. Hoffmann ◽  
I. Broser ◽  
H. Amano ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Blue Laser ◽  
Basic Material ◽  
Organic Chemical ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Wide Range ◽  
Gain Spectra ◽  
Excitation Processes

High-excitation processes like biexciton decay and recombination of an electron-hole-plasma are discussed as efficient mechanisms for lasing in blue laser diodes [1]. Therefore, the investigation of these processes is of fundamental importance to the understanding of the properties of GaN as a basic material for optoelectronical applications. We report on comprehensive photoluminescence and gain measurements of highly excited GaN epilayers grown by metal-organic chemical vapor deposition (MOCVD) over a wide range of excitation densities and temperatures. For low temperatures the decay of biexcitons and the electron-hole-plasma dominate the spontaneous-emission and gain spectra. A spectral analysis of the lineshape of these emissions is performed and the properties of the biexciton and the electron-hole-plasma in GaN will be disscused in comparison to other wide-gap materials. At increased temperatures up to 300 K exciton-exciton-scattering and band-to-band recombination are the most efficient processes in the gain spectra beside the electron-hole-plasma.

scholarly journals Temporal evolution of the dense electron-hole plasma phase in GaAs quantum wires

1994 ◽  
Author(s):  
Roberto Cingolani ◽  
R. Rinaldi ◽  
Michele Ferrara ◽  
Giuseppe C. La Rocca ◽  
Herbert Lage ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Temporal Evolution ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Plasma Phase
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