Microstructural Characterization of Al2O3 Following Simultaneous Triple Ion Bombardment

1988 ◽  
Vol 128 ◽  
Author(s):  
S. J. Zinkle
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Microstructural Characterization ◽  
Ion Bombardment ◽  
Dislocation Loops ◽  
Polycrystalline Alumina ◽  
Radiation Induced ◽  
Triple Ion

ABSTRACTThe through-range microstructure of polycrystalline alumina has been examined by cross-section TEM following simultaneous implantation of 2.0 MeV Al+, 1.44 MeV O+, and 0.2 to 0.4 MeV He+ ions at room temperature to a dose of 3.1 keV/atom. The specimen remained crystalline following the irradiation, and four distinct radiation-induced defect features were observed: Network dislocations, dislocation loops, small cavities, and oblong clusters that may be aluminum colloids. The microstructure near the implanted ion region was qualitatively similar to that observed in irradiated regions far from the implanted zone.

Microstructural Characterization of Ni-Al Alloyed Layer under Laser Rapid Solidification Condition

2011 ◽  
Vol 328-330 ◽  
pp. 565-568
Author(s):  
Yue Yang ◽  
Hua Wu
Keyword(s):  
Cross Section ◽  
Pulsed Laser ◽  
Microstructural Characterization ◽  
Eutectic Growth ◽  
Nickel Layer ◽  
Solidification Condition ◽  
Melted Zone ◽  
Transmission Electron ◽  
Pulsed Laser Irradiation

Nickel layer electroless deposited on aluminum substrate was alloyed by Nd-YAG pulsed laser irradiation. Solidification microstructure was characterized through cross section, showing typical microstructure that were located in upper and middle melted zone and interface of melted pool and substrate, respectively. The microstructure was analyzed by transmission electron microscopy (TEM). Followed by the observations, the eutectic growth process was analyzed.

Synthesis and Characterization of Carbon Nitride Thin Film with Evidence of Nanodomes

2004 ◽  
Vol 843 ◽  
Author(s):  
S. Chowdhury ◽  
M. T. Laugier
Keyword(s):  
Thin Film ◽  
Deposition Temperature ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Synthesis And Characterization ◽  
Sputtering System

ABSTRACTWe have reported the synthesis of carbon nitride thin films with evidence of formation of carbon nanodomes over a range of substrate temperature from 50 °C to 550 °C. An RF magnetron sputtering system was used for depositing carbon nitride films. The size of the nanodomes can be controlled by deposition temperature and increases from 40–80 nm at room temperature to 200–400 nm at high temperature (550 °C). Microstructural characterization was performed by AFM. Electrical characterization shows that these films have conductive behaviour with a resistivity depending on the size of the nanodomes. Resistivity values of 20 mΩ-cm were found for nanodomes of size 40–80 nm falling to 6 m?-cm for nanodomes of size 200–400 nm. Nanoindentation results show that the hardness and Young's modulus of these films are in the range from 9–22 GPa and 100–168 GPa respectively and these values decrease as the size of the nanodomes increases. GXRD results confirm that a crystalline graphitic carbon nitride structure has formed.

Microstructural Characterization of Porous Silicon SOI Structures

1987 ◽  
Vol 107 ◽  
Author(s):  
J.D. L'ecuyer ◽  
M.H. Loretto ◽  
J.P.G. Farr ◽  
J.M. Keen ◽  
J.G. Castledine ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Cross Section ◽  
Microstructural Characterization ◽  
Epitaxial Silicon ◽  
Order Of Magnitude ◽  
Oxidized Porous Silicon

AbstractSOI structures up to 60nm wide have been produced using oxidized porous silicon formed by selective n/n+ anodizing. The microstructures of the islands were investigated using TEM in both the planar and cross-section geometries. Typical island thickness is about 0.15nm and the buried oxidized porous silicon about 0.65μm. Retention of the island geometry is excellent. Few defects (essentially dislocations) are associated with either the anodizing or oxidation treatments. The interface sharpness between the epitaxial silicon/oxidized porous silicon is 10-20nm, an order of magnitude sharper than the back interface between the oxidized porous silicon and the substrate.

Microstructure and microtexture of a Nb-16%Si (DS) Alloy

1995 ◽  
Vol 53 ◽  
pp. 122-123
Author(s):  
J. A. Sutliff ◽  
B. P. Bewlay
Keyword(s):  
High Temperature ◽  
Directional Solidification ◽  
Room Temperature ◽  
Microstructural Characterization ◽  
Crystallographic Analysis ◽  
Directionally Solidified ◽  
Heat Treated ◽  
Other Orientation

In-situ composite Nb-Si alloys have been studied by several investigators as potential high temperature structural materials. The two major processing routes used to fabricate these composites are directional solidification and extrusion of arc-cast solidified ingots. In both cases a stable microstructure of primary Nb dendrites in a eutectoid of Nb and Nb5Si3 phases is developed after heat treatment. The Nb5Si3 phase is stable at room temperature and forms as a decomposition product of the high temperature Nb3Si phase. The anisotropic microstructures developed by both directional solidification and extrusion require evaluation of the texture to fully interpret the fracture and other orientation dependent mechanical behavior of these composites.In this paper we report on the microstructural characterization of a directionally solidified (DS) and heat treated Nb-16 at.%Si alloy. The microtexture of each of the phases (Nb, Nb5Si3) was determined using the Electron BackScattering Pattern (EBSP) technique for electron diffraction in the scanning electron microscope. A system employing automatic diffraction pattern recognition, crystallographic analysis, and sample or beam scanning was used to acquire the microtexture data.

Nucleation and Growth of {113} Defects and {111} Dislocation Loops Insilicon-Implanted Selicon

1997 ◽  
Vol 469 ◽  
Author(s):  
G. Z. Pan ◽  
K. N. Tu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Microstructural Characterization ◽  
Nucleation And Growth ◽  
Growth Behavior ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTPlan-view and cross-sectional transmission electron microscopy have been used to study the microstructural characterization of the nucleation and growth behavior of {113} rodlike defects, as well as their correlation with {111} dislocation loops in silicon amorphized with 50 keV, 36×1014 Si/cm2, 8.0 mAand annealed by rapid thermal anneals at temperatures from 500 °C to 1100 °C for various times. We found that the nucleations of the {113} rodlike defects and {111} dislocation loops are two separate processes. At the beginning of anneals, excess interstitials accumulate and form circular interstitial clusters at the preamorphous/crystalline interface at as low as 600 °C for 1 s. Then these interstitial clusters grow along the <110> direction to form {113} rodlike defects. Later, while the {113} defects have begun to grow and/or dissolve into matrix, the {111} faulted Frank dislocation loops start to form. We also found that the initial interstitial clusters prefer to grow along the <110>directions inclined to the implantation surface.

scholarly journals Microstructural characterization of glass-epoxy composites subjected to tensile testing

2013 ◽  
pp. 151-162 ◽  
Author(s):  
Jelena Petrovic ◽  
Dragoljub Bekric ◽  
Ivica Vujicic ◽  
Ivana Dimic ◽  
Slavisa Putic
Keyword(s):  
Tensile Testing ◽  
Room Temperature ◽  
Epoxy Composite ◽  
Microstructural Characterization ◽  
Mechanical Analysis ◽  
Destruction Process ◽  
Tension Properties ◽  
Statistical Mechanical ◽  
Electronic Microscope

The main objective of the research presented in this paper was to carry out a statistical-mechanical analysis concerning the tensile test of glass-epoxy composite materials in order to calculate their relevant tension properties and micromechanical structure destruction process. The analysis was done at room temperature, and its results were derived based on the structure of the glass woven 280 g/m?, ?twill texture? with the width value of 100 cm, type - Interglass 92125, and epoxy resin type MGS L 135. Samples were shaped by hands with 35% of fabric volume part. The consumed portion of resin was 220 g/m?, the thickness of the laminate was 0.308 mm, and the mass of the laminate was 500 g/m2. There were a total of eight layers built in the panel. The micromechanical analysis was derived from the crack surfaces data collected on a scanning electronic microscope, and it showed the mechanisms of damage, and development of cracks until the occurrence of the final break under the tension load.

Microstructural characterization of oxygen-implanted poly-Si layers

1991 ◽  
Vol 49 ◽  
pp. 892-893
Author(s):  
N. David Theodore ◽  
WenLing M. Huang
Keyword(s):  
Cross Section ◽  
Microstructural Characterization ◽  
Dark Field ◽  
Rapid Thermal Anneal ◽  
Bright Field ◽  
Plan View ◽  
Transmission Electron ◽  
Microstructural Behavior ◽  
Si Films

Poly-Si layers were evaluated that had been exposed to varying doses of oxygen-implant prior to an anneal. The layers were doped (by implantation) with arsenic. Oxygen implantation was found to modify the conductivity of the doped poly-Si films. The microstructural behavior of the films was of interest (as potentially enabling explanation of the modified conductivity).The oxygen implant doses investigated in this study were 1E14 and 1E16 cm-2. The arsenic dose used (dopant incorporated by implantation) was 1.3E13 cm-2. The oxygen-implantedpoly-Si layers were annealed (rapid-thermal anneal, “RTA“) at 1050°C for 30 seconds. Cross-section TEM specimens were prepared in the 110 substrate-geometry, and plan-view TEM specimens in the 100 substrate-geometry. These were then analyzed using selected-area diffraction, bright-field, and dark-field images under gradually varying conditions of electron-beam tilt. A JEOL JEM 200CX transmission electron microscope was used for analysis, operating at 200 kV.

scholarly journals Atomic Level Characterization of Neutron Irradiated Pressure Vessel Steels

2000 ◽  
Vol 650 ◽  
Author(s):  
M. K. Miller ◽  
P. Pareige
Keyword(s):  
Pressure Vessel ◽  
Three Dimensional ◽  
Atom Probe ◽  
Dislocation Loops ◽  
Probe Field ◽  
Pressure Vessel Steels ◽  
Spatial Coordinates ◽  
Radiation Induced ◽  
Nickel Manganese

ABSTRACTAtom probe tomography provides one of the most effective tools to characterize the solute distribution and precipitation that occurs in pressure vessel steels and associated model alloys during irradiation. The three-dimensional atom probe is able to experimentally determine the elemental identities of the atoms and their spatial coordinates with near atomic resolution so that their distribution within small volumes of the specimen can be reconstructed and analyzed. This technique together with conventional atom probe field ion microscopy has been applied to many different types of pressure vessel steels and model alloys and has revealed and characterized several different nanostructural transformations. These radiation induced or enhanced processes lead to the formation of copper-nickel-manganese-silicon-enriched precipitates, and solute segregation to dislocations, dislocation loops, nanovoids and boundaries.

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