Laser Incorporation of Silicon into GaAs-AlGaAs Heterostructures

1988 ◽  
Vol 126 ◽  
Author(s):  
J. E. Epler ◽  
F. A. Ponce ◽  
J. C. Tramontana ◽  
F. J. Endicott ◽  
T. L. Paoli
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Laser Scanning ◽  
Secondary Ion Mass Spectrometry ◽  
Device Fabrication ◽  
Transmission Electron ◽  
Buried Heterostructure ◽  
Low Threshold ◽  
Secondary Ion ◽  
Scanning Electron

ABSTRACTRecently, a laser-scanning technique for patterning Si-induced layer disordering of GaAs-AlGaAs heterostructures has been reported. This process, called laserassisted disordering (LAD), has been successfully used to fabricate low threshold buried heterostructure lasers. In this report, the LAD process is studied in detail with scanning electron microscopy, transmission electron microscopy and secondary ion mass spectrometry. The results are discussed in the context of device fabrication.

scholarly journals Изменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ

2019 ◽  
Vol 53 (3) ◽  
pp. 332
Author(s):  
В.В. Привезенцев ◽  
В.С. Куликаускас ◽  
В.А. Скуратов ◽  
О.С. Зилова ◽  
А.А. Бурмистров ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Cross Section ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Transmission Electron ◽  
Oxide Phases ◽  
Secondary Ion ◽  
Surface Pores ◽  
Scanning Electron

AbstractSingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS

2010 ◽  
Vol 434-435 ◽  
pp. 169-172 ◽  
Author(s):  
Wei Kong Pang ◽  
It Meng Low ◽  
J.V. Hanna
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Amorphous Silica ◽  
Direct Evidence ◽  
Secondary Ion Mass Spectrometry ◽  
Amorphous Sio2 ◽  
Transmission Electron ◽  
First Time ◽  
Secondary Ion

The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at 1000°C.

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