Electrical Properties of Metal-Oxide-Silicon Structures Wrm Sol-Gel Oxides

1988 ◽  
Vol 121 ◽  
Author(s):  
W. L. Warren ◽  
P. M. Lenahan ◽  
C. J. Brinker
Keyword(s):  
Sol Gel ◽  
Interface Trap ◽  
Silicon Substrates ◽  
Insulating Films ◽  
Device Applications ◽  
Silicon Structures ◽  
Radiation Induced ◽  
Sol Gel Films ◽  
Radiation Hard ◽  
Silicon Interface

ABSTRACTWe have investigated the electronic properties of sol-gel derived films on silicon substrates. Our investigation involves SiO2, aluminosilicate and borosili cate oxides on silicon. Seme sol-gel oxides are excellait insulators; seme sol-gel films on silicon also exhibit quite low oxide/silicon interface trap densities. We have also subjected sol-gel films on silicon to 4 Mrad(SiO2) of radiation and have found that these structures appear to be radiation hard (very little radiation induced oxide space charge or interface trap generation). Our results strongly suggest that sol-gel processing could provide insulating films for a variety of microelectronic device applications.

Amorphous Sol-Gel Insulating Films

1992 ◽  
Vol 284 ◽  
Author(s):  
C. Jeffrey Brinker ◽  
William L. Warren ◽  
Monica N. Logan ◽  
Carol S. Ashley
Keyword(s):  
Capillary Pressure ◽  
Film Formation ◽  
Sol Gel ◽  
Silicon Substrates ◽  
Inorganic Polymers ◽  
Silica Films ◽  
Insulating Films ◽  
Polymer Reaction ◽  
Passivation Layers ◽  
Relationship Of

ABSTRACTThe porosity of sol-gel thin films may be tailored for specific applications through control of the size and structure of inorganic polymers within the coating sol, the extent of polymer reaction and interpenetration during film formation, and the magnitude of the capillary pressure exerted during the final stage of drying. By maximizing the capillary pressure and avoiding excessive condensation, dense insulating films may be prepared as passivation layers on silicon substrates. Such films can exhibit excellent dielectric integrity, viz., low interface trap densities and insulating properties approaching those of thermally grown SiO2. Alternatively, through exploitation of the scaling relationship of mass and density of fractal objects, silica films can be prepared that show a variation in porosity (7–29 %) and refractive index (1.42 ndash;1.31) desired for applications in sensors, membranes, and photonics.

Sol-gel synthesis of rare-earth-doped fluoride glass thin films

1996 ◽  
Vol 11 (4) ◽  
pp. 841-849 ◽  
Author(s):  
John Ballato ◽  
Matthew Dejneka ◽  
Richard E. Riman ◽  
Elias Snitzer ◽  
Weimin Zhou
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Sol Gel ◽  
Fluoride Glass ◽  
Silicon Substrates ◽  
Fluorescence Studies ◽  
Glass Rods ◽  
Sol Gel Films ◽  
Sol Gel Synthesis ◽  
Rare Earth Doped

This paper describes ZBLA fluoride glass thin films produced via an inexpensive, low-temperature reactive atmosphere sol-gel approach. Luminescence from erbium at 1.55 μm has been observed in x-ray-amorphous doped films deposited on calcium fluoride, polyimide, sapphire, and silicon substrates. Fluorescence studies of the erbium 4S3/2 → 4I13/2 transition, a characteristic emission for a reduced phonon energy host, were conducted for both sol-gel-derived films and conventionally prepared glass rods. The peak intensity observed from the sol-gel films was blue-shifted by 16 nm with a FWHM value approximately half that measured for the melt-quenched rods. Excitation studies indicate that, unlike conventionally prepared glasses, sol-gel materials suffer from nonradiative relaxation of the 4S3/2 excited state to the 4I9/2 level, where subsequent radiative emission to the 4I15/2 ground state occurs. The proposed source of the quenching mechanism are remnant species inherent to the sol-gel process. While this causes the luminescence behavior of rare-earth-doped sol-gel-derived fluoride materials to be similar to oxide hosts, these remnant species modify the branching ratios, resultantly leading to a novel 824 nm emission when excited at 488 nm.

Investigation of the effects of thickness on physical properties of AZO sol-gel films for photonic device applications

2018 ◽  
Vol 735 ◽  
pp. 2236-2246 ◽  
Author(s):  
Khamsa Necib ◽  
Tahar Touam ◽  
Azeddine Chelouche ◽  
Lydia Ouarez ◽  
Djamel Djouadi ◽  
...  
Keyword(s):  
Physical Properties ◽  
Sol Gel ◽  
Photonic Device ◽  
Device Applications ◽  
Sol Gel Films

Fast and Simple Specimen Preparation for TEM Studies of Oxide Films Deposited on Silicon Wafers

2009 ◽  
Vol 15 (1) ◽  
pp. 15-19 ◽  
Author(s):  
Valentin S. Teodorescu ◽  
Marie-Genevieve Blanchin
Keyword(s):  
Sol Gel ◽  
Film Surface ◽  
Specimen Preparation ◽  
Silicon Substrates ◽  
Simple Method ◽  
Plan View ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Sol Gel Films ◽  
Si Wafer

AbstractWe present a fast and simple method to prepare specimens for transmission electron microscopy studies of oxide thin films deposited on silicon substrates. The method consists of scratching the film surface using a pointed diamond tip, in a special manner. Small and thin fragments are then detached from the film and its substrate. Depending on the scratching direction, the fragments can be used for plan-view or cross-section imaging. High-resolution images can be also obtained from thin edges of the film fragments. The method is demonstrated in the case of HfO2 sol-gel films deposited on [100] Si wafer substrates.

Towards Better Control of Sol-Gel Film Processing for Optical Device Applications

1997 ◽  
Vol 06 (01) ◽  
pp. 1-18 ◽  
Author(s):  
F. Horowitz ◽  
E. J. C. Dawnay ◽  
M. A. Fardad ◽  
Mino Green ◽  
E. M. Yeatman
Keyword(s):  
Integrated Optics ◽  
Sol Gel ◽  
Molecular Probe ◽  
Optical Device ◽  
Gel Film ◽  
Device Applications ◽  
Film Processing ◽  
Sol Gel Films

This paper reviews work carried out by the authors in developing nanoporous sol-gel films as hosts for semiconductor crystallites, for applications in nonlinear integrated optics, including aspects of fabrication, characterisation and modelling. Particular attention is given to three novel techniques — optospinography, molecular probe ellipsometry and pore capping, as well as prospects that have been raised from their outcome.

Characterisation of microporous sol-gel films for optical device applications

1994 ◽  
Vol 2 (1-3) ◽  
pp. 711-715 ◽  
Author(s):  
E. M. Yeatman ◽  
Mino Green ◽  
E. J. C. Dawnay ◽  
M. A. Fardad ◽  
F. Horowitz
Keyword(s):  
Sol Gel ◽  
Optical Device ◽  
Device Applications ◽  
Sol Gel Films

scholarly journals Impact of γ-rays Irradiation on Hybrid TiO2-SiO2 Sol-Gel Films Doped with RHODAMINE 6G

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5754
Author(s):  
Maxime Royon ◽  
Francis Vocanson ◽  
Damien Jamon ◽  
François Royer ◽  
Emmanuel Marin ◽  
...  
Keyword(s):  
Refractive Index ◽  
Rhodamine 6G ◽  
Sol Gel ◽  
Host Matrix ◽  
Sensing Applications ◽  
Luminescent Films ◽  
Radiation Induced ◽  
Γ Rays ◽  
Uv Photons ◽  
Sol Gel Films

In the present paper, we investigate how the optical and structural properties, in particular the observed photoluminescence (PL) of photocurable and organic-inorganic TiO2-SiO2 sol-gel films doped with Rhodamine 6G (R6G) are affected by γ-rays. For this, four luminescent films, firstly polymerized with UV photons (365 nm), were submitted to different accumulated doses of 50 kGy, 200 kGy, 500 kGy and 1 MGy while one sample was kept as a reference and unirradiated. The PL, recorded under excitations at 365 nm, 442 nm and 488 nm clearly evidences that a strong signal peaking at 564 nm is still largely present in the γ-irradiated samples. In addition, M-lines and Fourier-transform infrared (FTIR) spectroscopies are used to quantify the radiation induced refractive index variation and the chemical changes, respectively. Results show that a refractive index decrease of 7 × 10−3 at 633 nm is achieved at a 1 MGy accumulated dose while a photo-induced polymerization occurs, related to the consumption of CH=C, Si-OH and Si-O-CH3 groups to form Ti-O and Si-O bonds. All these results confirm that the host matrix (TiO2-SiO2) and R6G fluorophores successfully withstand the hard γ-ray exposure, opening the way to the use of this material for sensing applications in radiation-rich environments.

Sol-gel synthesis of textured lanthanum titanate thin films

2003 ◽  
Vol 18 (2) ◽  
pp. 357-362 ◽  
Author(s):  
Mary M. Sandstrom ◽  
Paul Fuierer
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Optical Measurements ◽  
Layered Perovskite ◽  
Orientation Factor ◽  
Anisotropic Structures ◽  
Sol Gel Films ◽  
Sol Gel Synthesis

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.

Influence of radical photoinitiator content on UV curing process and UV-cured hybrid sol–gel films

2019 ◽  
Vol 17 (2) ◽  
pp. 333-343 ◽  
Author(s):  
Anaïs Even ◽  
Guillaume Vignaud ◽  
Nadia Guitter ◽  
Nathalie Le Bozec ◽  
Philippe Tingaut ◽  
...  
Keyword(s):  
Sol Gel ◽  
Uv Curing ◽  
Curing Process ◽  
Sol Gel Films ◽  
Uv Curing Process
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