Electron Microscope Observations of Mechanisms of thin Film Delamination from Substrates

1988 ◽  
Vol 119 ◽  
Author(s):  
D. Goyal ◽  
A. H. King
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Film Formation ◽  
Single Crystal Silicon ◽  
Metal Films ◽  
Model Systems ◽  
Silicon Substrates ◽  
Formation Model ◽  
Crystal Silicon ◽  
Transmission Electron

AbstractTransmission electron microscope techniques have been applied to the problem of thin film delamination from substrates during film formation. Model systems involving metal films on single crystal silicon substrates have been used and it is found that delamination of the films is initiated by the formation of damage in the substrate. This understanding removes some of the fundamental problems regarding delamination.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Synthesis and Selected Micro-Mechanical Properties of Titanium Nitride Thin Films by the Pyrolysis of Tetrakis Titanium in Ammonia.

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
L. Riester
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Chemical Vapor Deposited

AbstractThin films of titanium nitride were chemical vapor deposited on (100)-oriented single-crystal silicon substrates from tetrakis (dimethylamino) titanium, Ti((CH3)2N)4, and ammonia gas mixtures in a cold-wall reactor at 623 K and 655 Pa. The films were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron spectroscopy. The nano-scale hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient against unlubricated, type- 440C stainless steel was determined using a computer-controlled friction microprobe to be ∼0.43.

Microwave Activation of Dopants & Solid Phase Epitaxy in Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Douglas C. Thompson ◽  
J. Decker ◽  
T. L. Alford ◽  
J. W. Mayer ◽  
N. David Theodore
Keyword(s):  
Single Crystal ◽  
Microwave Heating ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Microwave System

AbstractMicrowave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for time-durations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.

Effect of Boron Doping on the C49 TO C54 Phase Transformation in Ti/Si (100) Bilayers

1996 ◽  
Vol 441 ◽  
Author(s):  
M. Libera ◽  
A. Quintero
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Interface Roughness ◽  
Ex Situ ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Boron Doped ◽  
Transmission Electron

AbstractWe have demonstrated that the formation of C54 TiSi2 on Boron-doped single crystal silicon substrates, under RTA annealing conditions in a Nitrogen ambient, leads to a thicker TiN capping surface layer, thinner silicide layer, higher C49 to C54 transformation temperature and greater interface roughness compared to C54 TiSi 2 formation on undoped single crystal silicon substrates. Titanium films 32 nm thick were deposited on undoped and boron-doped single crystal silicon substrates. The films were annealed at 3 /C/isn nitrogen to final quenching temperatures between 500 °C and 900 TC. Ex-situ four point probe sheet resistance, cross sectional transmission electron microscopy (XTEM), high resolution transmission electron microscopy (HRTEM) and x-ray diffraction (XRD) were used to analyze the resulting TiN on TiSi2 bilayer. The C49 to C54 transformation occurs circa 760 TC and 810 TC for the undoped and boron-doped cases respectively. HRTEM observations reveal a thick 20 nm TIN layer on the C54 TiSi2 film in the boron-doped case but only fine dispersed TiN particles embedded on the top of the silicide in the undoped case. It was observed that the resultant silicide in the boron-doped case was thinner and the TiSi2 /Si(100) interface is rougher. XRD and TEM analysis show that in the boron doped case, there is a preferred C54 (040) orientation compared to a random orientation for the undoped case.

Agglomeration-Free Nanoscale Cobalt Silicide Film Formation Via Substrate Preamorphization

1993 ◽  
Vol 309 ◽  
Author(s):  
S. Pramanick ◽  
B.K. Patnaik ◽  
G. A. Rozgonyi
Keyword(s):  
Grain Size ◽  
Film Formation ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Concurrent Processing ◽  
Process Modification ◽  
Boron Doped ◽  
Heavily Doped ◽  
Stability Issues

AbstractWe have used preamorphization of silicon substrates as a process modification to suppress agglomeration during cobalt disilicide film formation. Planar, continuous and low resistivity (<21 μΩ-cm) silicide films less than 35 nm thick have been produced both on single crystal silicon and polysilicon. Nanoscale(<35 nm) silicide films are more susceptible to islanding phenomena since agglomeration is dependent onthe ratio of grain size to film thickness. Preamorphization prior to silicidation favorsa large increase in silicide nucleation rate, as well as reduction in critical nuclei size, both of which aid the formation of silicide with small grains. The resulting small grain silicides enable nanoscale films to remain below the critical grain size to thickness ratio for which thin films become morphologically unstable. An interphase void band which occurs between CoSi and CoSi2 layers, acts as a convenient diffusion marker and aids interpretation of the complex stability issues. Preamorphization prior to silicidation was also extended to heavily doped substrates to study the applicability of this approach for junctions and gate contacts. Silicidation of amorphized heavily boron doped substrates produces non uniform layers due to the collision of the advancing silicidation and SPE interfaces. A comparision of concurrent processing, i.e. simulatneous dopant activation and silicide formation, with conventional silicidation of Si+ preamorphized heavily doped(B) substrates is also presented.

An Epitaxial Si/insulator/Si Structure Prepared by Vacuum Deposition of CaF2 and Silicon

1981 ◽  
Vol 10 ◽  
Author(s):  
T. Asano ◽  
H. Ishiwara
Keyword(s):  
Substrate Temperature ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Rutherford Backscattering ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Optimum Conditions ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Substrate Temperatures

Heteroepitaxial CaF2/Si and Si/CaF2/Si structures were prepared by conventional vacuum evaporation of CaF2 and silicon onto silicon substrates. The optimum conditions for obtaining good epitaxial films were investigated by changing the silicon substrate orientation, the film thickness and the substrate temperature during film deposition. From Rutherford backscattering and channelling spectroscopy it was found that CaF2 films with excellent film quality were obtained on Si(111), Si(110) and Si(100) substrates at substrate temperatures of 600– 800°C, 800°C and 500–600°C respectively. It was also found from Rutherford backscattering and channelling spectroscopy and from transmission electron microscopy that single-crystal silicon films are formed on a CaF2/Si(111) structure at a substrate temperature of 700°C. From measurements of the electrical properties of the top silicon film after the implantation of phosphorus ions at 2 ×1015 cm−2 and subsequent annealing at 750°C, an electron Hall mobility of 69cm2 V−1 s−1 was obtained.

Kinetics of TiSi2 thin film formation at a single-crystal silicon surface by Ti ion irradiation

1993 ◽  
Vol 226 (2) ◽  
pp. 191-195
Author(s):  
E.I. Bogdanov ◽  
L.N. Larikov ◽  
E.A. Maximenko ◽  
V.I. Franchouk
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Silicon Surface ◽  
Ion Irradiation ◽  
Film Formation ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Thin Film Formation ◽  
Kinetics Of

Phase Formation Between Codeposited Co-Ta Thin Film and Single Crystal Silicon Substrate

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Riskin ◽  
J. Pelleg ◽  
M. Talianker
Keyword(s):  
Single Crystal Silicon ◽  
Vlsi Circuits ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Temperature Range ◽  
Transmission Electron ◽  
Metal Silicides ◽  
Single Crystal Silicon Substrate ◽  
Lower Temperature Range ◽  
Lower Temperature

AbstractA combination of near-noble and refractory metal silicides was considered for shallow contacts to silicon in VLSI circuits [1]. The objective of the present work is to investigate formation of phases between codeposited Co-Ta film, of 150 nm thickness, and n-type silicon substrates of (100) or (111) orientation. Characterization of the specimens annealed in the temperature range of 600–1100°C was done by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It was found that in addition to the silicide phases of Co and Ta, the intermetallic compound Co2 Ta was also formed. Co2 Ta appears only in the lower temperature range of about 600–800°C. At temperatures of 900–1100°C only the silicon rich phases were present. These are the low resistivity phases useful for devices. No ternary phases have been observed. Silicide formation occurs at a faster rate on (111) oriented silicon substrates.

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