The Effect of Dominant Junction on the Open Circuit Voltage of Amorphous Silicon Alloy Solar Cells.

1988 ◽  
Vol 118 ◽  
Author(s):  
Adam H. Pawlikiewicz ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Silicon Alloy

Improvement the Open Circuit Voltage of Amorphous Silicon Solar Cells by Treating the P Layer with Hydrogen Plasma

2011 ◽  
Vol 181-182 ◽  
pp. 328-331
Author(s):  
Ming Ji Shi ◽  
Lei Xiong ◽  
Lan Li Chen
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Open Circuit Voltage ◽  
Volume Fraction ◽  
Hydrogen Plasma ◽  
Cell Mass ◽  
Energy Conversion Efficiency ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
Amorphous Silicon Solar Cell

It is necessary to improve the open circuit voltage of amorphous silicon solar cells for its applications. In this paper, we discuss the effects of hydrogen plasma treatment on the P layer and the performance of the amorphous silicon solar cells. The result shows that the open circuit voltage increased by 0.0257V, the fill factor increased by 0.039 and the energy conversion efficiency increased by 9%. The highest VOCwe got was 0.99V. Treating P layer with hydrogen plasma has been demonstrated to result in materials with improved crystalline volume fraction which was very effective to increase the light absorption of the intrinsic layer. What is more, it could be easily integrated into the amorphous silicon solar cell mass production process.

scholarly journals Bandtail Limits to Solar Conversion Efficiencies in Amorphous Silicon Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
K. Zhu ◽  
J. Yang ◽  
W. Wang ◽  
E. A. Schiff ◽  
J. Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Power Density ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Drift Mobility ◽  
Silicon Solar Cells ◽  
Solar Conversion ◽  
Conversion Efficiencies

AbstractWe describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail properties. We show how hole drift-mobility measurements and measurements of the temperature-dependence of the open-circuit voltage VOC can be used to estimate the parameters, and we present VOC(T) measurements. We compared the power density under solar illumination calculated with this model with published results for as-deposited a-Si:H solar cells. The agreement is within 4% for a range of thicknesses, suggesting that the power from as-deposited cells is close to the bandtail limit.

Stability Studies of Hydrogenated Amorphous Silicon Alloy Solar Cells Prepared with Hydrogen Dilution

1994 ◽  
Vol 336 ◽  
Author(s):  
J. Yang ◽  
X. Xu ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Open Circuit ◽  
Solar Cell Performance ◽  
Silicon Alloy ◽  
Before And After ◽  
Photovoltaic Characteristics ◽  
Hydrogenated Amorphous

ABSTRACTWe have fabricated hydrogenated amorphous silicon alloy solar cells using hydrogen dilutions at 175 °C and 300 °C, and obtained improved photovoltaic characteristics in both the initial and degraded states for the highly diluted cells; both the fill factor and the open-circuit voltage exhibit higher values before and after light soaking. Infrared analyses reveal that for a given deposition temperature the amount of bonded hydrogen has similar concentrations between the high and low hydrogen diluted samples. Optical Modelling shows a 20 MeV difference in their optical bandgap. Defect densities obtained from constant photocurrent measurements give similar values for a given deposition temperature both before and after light soaking, inconsistent with solar cell performance.

scholarly journals Temperature-Dependent Open-Circuit Voltage Measurements and Light-Soaking in Hydrogenated Amorphous Silcon Solar Cells

2005 ◽  
Vol 862 ◽  
Author(s):  
Jianjun Liang ◽  
E. A. Schiff ◽  
S. Guha ◽  
B. Yan ◽  
J. Yang
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Open Circuit ◽  
Illumination Intensity ◽  
Temperature Dependent ◽  
Defect Generation ◽  
Hydrogenated Amorphous

AbstractWe present temperature-dependent measurements of the open-circuit voltage VOC(T) in hydrogenated amorphous silicon nip solar cells prepared at United Solar. At room-temperature and above, VOC measured using near-solar illumination intensity differs by as much as 0.04 V for the as-deposited and light-soaked states; the values of VOC for the two states converge below 250 K. Models for VOC based entirely on recombination through deep levels (dangling bonds) do not account for the convergence effect. The convergence is present in a model that assumes the recombination traffic in the as-deposited state involves only bandtails, but which splits the recombination traffic fairly evenly between bandtails and defects for the light-soaked state at room-temperature. Recombination mechanisms are important in understanding light-soaking, and the present results are inconsistent with at least one well-known model for defect generation.

Sign in / Sign up

Export Citation Format

Share Document