Growth Studies of Heteroepitaxial Ge Films ON Si

1988 ◽  
Vol 116 ◽  
Author(s):  
D.J. Heim ◽  
T.G. Holesinger ◽  
K.M. Lakin ◽  
H.R. Shanks
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Lattice Mismatch ◽  
Cluster Beam ◽  
Single Crystalline ◽  
Si Substrates ◽  
Gaas On Si ◽  
Growth Studies ◽  
Rapid Monitoring ◽  
Computer Controlled

AbstractOne of the approaches to the growth of GaAs on Si substrates involves the use of a heteroepitaxial buffer layer such as Ge to reduce lattice mismatch. Recently, we have had success in growing heteroepitaxial Ge films on low temperature (∼275-500°C) Si substrates by the ionized cluster beam (ICB) technique. The design of a computer-controlled phase modulated ellipsometer for rapid monitoring of the initial stages of nucleation will be described. Ellipsometric data for single crystalline, polycrystalline and amorphous morphologies are reported.

Thin YBa2Cu3O7–x Films Prepared by Low Temperature Coevaporation on Si Substrates Without Buffer Layer

1990 ◽  
Vol 119 (2) ◽  
pp. K155-K158 ◽  
Author(s):  
Š. Chromik ◽  
V. Štrbík ◽  
Š. Beňačka ◽  
R. Adam ◽  
M. Jergel
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Si Substrates

Raman Spectroscopy of Epitaxial Si/Si1-xGe, xHeterostructures

1998 ◽  
Vol 533 ◽  
Author(s):  
Ran Liu ◽  
Stefan Zollner ◽  
Ming Liaw ◽  
David O'meara ◽  
Nigel Cave
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Treatment ◽  
Raman Scattering ◽  
Buffer Layer ◽  
Excellent Agreement ◽  
Lattice Mismatch ◽  
Theoretical Curve ◽  
Sum Rule ◽  
Si Substrates ◽  
Strain Coefficient

AbstractRaman scattering studies were carried out on epi Si/Si1-xGex (x = 0.1 to 0.3) heterostructures consisting of a thin Si cap layer (100 - 400 A˚), a grade-down Si1-xGex layer, a constant Si1-xGex, buffer layer and a grade-up graded Si1-xGex layer on (100) oriented Si substrates. Different Ge composition, Si1-xGex layer thicknesses and thermal treatment were used to achieve different relaxation in the Si1-xGex layers. It has been revealed that, to a very good approximation, the absolute strains in the cap Si and constant Si1-xGex layers follow a simple sum-rule that is imposed by the lattice mismatch between unstrained Si and completely relaxed Si1-x Gex. This sum rule can be used to determine the Ge composition and stresses in both cap Si and constant Si1-xGex layers. Excellent agreement was found between the theoretical curve obtained with LO phonon strain coefficient b=−930cm−1 and the experimental total strain for all samples, regardless of the degree of the relaxation of the grade-up Si1-xGex layer.

Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L236-L238 ◽  
Author(s):  
Kuninori Kitahara ◽  
Nobuyuki Ohtsuka ◽  
Toshihiko Ashino ◽  
Masashi Ozeki ◽  
Kazuo Nakajima
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Gaas On Si

Low-temperature fabrication of high-quality (Ba, Sr)TiO3 films using charged liquid cluster beam method

2002 ◽  
Vol 17 (8) ◽  
pp. 1888-1891 ◽  
Author(s):  
Hyungsoo Choi ◽  
Sungho Park ◽  
Yi Yang ◽  
HoChul Kang ◽  
Kyekyoon (Kevin) Kim ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Cluster Beam ◽  
High Quality ◽  
Carboxylate Ligands ◽  
Si Substrates ◽  
Beam Method ◽  
Temperature Deposition ◽  
Bst Films ◽  
Substrate Temperatures

Low-temperature deposition of high-quality (Ba, Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charged liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280 °C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300 °C and subsequently annealed at 700 °C, were 2.5 × 10−9 A/cm2 at 1.5 V and 305, respectively.

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

1992 ◽  
Vol 263 ◽  
Author(s):  
Ting-Yen Chiang ◽  
En-Huery Liu ◽  
Der-Hwa Yiin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Solution Treatment ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

ABSTRACTThis paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates

2014 ◽  
Vol 778-780 ◽  
pp. 251-254 ◽  
Author(s):  
Kazuki Meguro ◽  
Tsugutada Narita ◽  
Kaon Noto ◽  
Hideki Nakazawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Sic Films

We have formed a SiC interfacial buffer layer on AlN/Si substrates at a low temperature by low-pressure chemical vapor deposition (LPCVD) using monomethylsilane (CH3SiH3; MMS), and grew 3C-SiC films on the low-temperature buffer layer by LPCVD using MMS. We investigated the surface morphology and crystallinity of the grown SiC films. It was found that the formation of the SiC buffer layer suppressed the outdiffusion of Al and N atoms from the AlN intermediate layer to the SiC films and further improved the surface morphology and crystallinity of the films.

Growth and properties of epitaxial PbSe on Si(111) and Si(100) without buffer layer

1995 ◽  
Vol 379 ◽  
Author(s):  
P. Müller ◽  
A.N. Tiwari ◽  
H. Zogg
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Infrared Detector ◽  
Device Fabrication ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
High Quality ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch

Narrow gap IV-VI materials like PbS, PbSnSe and PbSnTe are used for infrared detector device fabrication [1,2]. Earlier an intermediate Ila-fluoride buffer layer, which consisted of a BaF2/CaF2-stack of about 2000 Å thickness, was used to get epitaxial high quality layers on silicon substrates. This buffer is now reduced to a much thinner layer of only about 20 Å thick CaF2, regardless the large lattice mismatch between layer and substrate [3,4,5]. The question therefore arises if high quality IV-VI layers can be grown on Si-substrates without any buffer layer as e.g. in CdTe/Si or GaAs/Si systems.The aim of this work is to grow IV-VI layers directly on Si-substrates without any buffer layers to study the growth kinetics and epitaxial quality. PbSe was chosen as a representant of IV-VI materials, and layers were grown on (111)- and (100)-oriented silicon substrates.

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

2010 ◽  
Vol 645-648 ◽  
pp. 147-150 ◽  
Author(s):  
Eiji Saito ◽  
Sergey Filimonov ◽  
Maki Suemitsu
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
High Rate ◽  
Si Substrate ◽  
Single Crystalline ◽  
Step Process ◽  
Si Substrates ◽  
Sic Film

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 m/h is extremely high for this ULP process.

Low-Temperature Deposition of Pb(Zr,Ti)O3Thin Films on Si Substrates Using Ba(Mg1/3Ta2/3)O3as Buffer Layer

2004 ◽  
Vol 43 (8A) ◽  
pp. 5409-5413 ◽  
Author(s):  
Ying-Hao Chu ◽  
Chen-Wei Liang ◽  
Su-Jien Lin ◽  
Kuo-Shung Liu ◽  
I-Nan Lin
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Si Substrates ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Growth of GaAs on Si and its Application to FETs and LEDs

1986 ◽  
Vol 67 ◽  
Author(s):  
Masahiro Akiyama ◽  
Yoshihiro Kawarada ◽  
Seiji Nishi ◽  
Takashi Ueda ◽  
Katsuzo Kaminishi
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Antiphase Domain ◽  
Thin Layers ◽  
The Other ◽  
Heteroepitaxial Growth ◽  
Si Substrates ◽  
Large Lattice ◽  
Strained Layer Superlattice ◽  
Large Lattice Mismatch

In recent years, the heteroepitaxial growth of GaAs layers on Si substrates has been gained an increasing interest [1 - 14]. GaAs is one of the most important III-V materials and has been well studied and used for optical and electrical devices. On the other hand, with Si we have large size wafers of superior quality and sophisticated technologies and Si is a main material for semiconductor industries. Therefore, GaAs/Si system has possibilities for realizing new types of functional devices or ICs with GaAs and Si devices. This system, however, has two serious problems. One is the large lattice mismatch of about 4 % between these materials and the other is the polar on nonpolar problem i.e., the formation of an antiphase domain disorder. It was reported that when (211)-oriented Si substrates were used, there was no problem of the formation of an antiphase domain structure 5. For growing materials on lattice mismatched substrates, it was reported that the thin layers deposited at low temperatures were effective to relax the lattice mismatches for the systems such as SiC on Si[15] and Si on saphire [16]. In GaAs/Si system, the Ge buffer layer has been used to relax the lattice mismatch[17 - 22] It was also reported that the composite strained layer superlattice with GaP/GaAsP and GaAsP/GaAs was very effective as a buffer layer[23 - 25].

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