The Stimulated Crystallization of Amorphous SiO2 Films on Si Substrates Induced By Laser and Thermal Treatments

1988 ◽  
Vol 116 ◽  
Author(s):  
Felix Edelman
Keyword(s):  
Incubation Time ◽  
Crystallization Process ◽  
Laser Flash ◽  
Nucleation And Growth ◽  
Point Of View ◽  
Growth Theory ◽  
Thermal Treatments ◽  
Kinetic Characteristics ◽  
Amorphous Sio2 ◽  
Si Substrates

AbstractThe transformation of amorphous to crystal (a-c) structure of Si02 layers, thermally grown on both (100) and (111) Si substrates, was carried out by CO2 laser, flash-lamp, and furnace heat: treatments. All the treatments resulted in S102 crystallization according to two different mechanisms: normal and self-sustained growth processes. The kinetic characteristics of the S102 crystallization process such as incubation time, rates of nucleation and growth, and the microstructure of the Si-Si02 interface were investigated and are discussed from the point of view of growth theory. The a-c transformation in Si3N4 and SixOyNz films on Si substrates is also discussed.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

On Microfaceting Instability of Pt(110) Under Catalytic Oxidation of Adsorbed Co

1992 ◽  
Vol 263 ◽  
Author(s):  
M. Papoular
Keyword(s):  
Catalytic Oxidation ◽  
Oxidation Reaction ◽  
Nucleation And Growth ◽  
Point Of View ◽  
Momentum Balance ◽  
Layer By Layer ◽  
Adsorption Of Co ◽  
Specific Temperature ◽  
Energy And Momentum ◽  
Sawtooth Profile

ABSTRACTAs demonstrated by recent STM [1] and LEED [2] experiments the platinum (110) surface undergoes, at carbon monoxide submonolayer coverages, a phase transition from the 1 x 2 “missing-row” (reconstructed) state to the 1 x 1(bulk-like) state under specific temperature and partial-pressure conditions. The catalytic oxidation reaction CO + 1/2 → CO2 drives a microfaceting instability [3] [4] of the Pt(110) surface which ends up in a regular sawtooth profile with a period ≈ 200 Å, along the [110] direction.We introduce the idea that the rather extensive Pt mass transport, as involved in the process, could be energetically assisted by the reaction itself. Energy and momentum-balance considerations lead us to expect an energy ≲ 0.5 eV to be transferrable to thesubstrate. This should efficiently contribute to initiating the “scraping”process that leads to the microfaceted pattern.A simple model for nucleation and growth of facets is presented (see ref. 5), yielding characteristic times of order minutes (at T = 500 K), in fair agreement with experiment.Independently of the structural/catalytic problem, adsorption of CO at submonolayer coverages on, e.g., Pt(110) might be of interest from a surfactantphysics point of view (see ref. 6 for a very recent study on layer-by-layer homoepitaxial metal growth).

Preferred Orientations for Sol-Gel Derived Plzt Thin Layers

1993 ◽  
Vol 310 ◽  
Author(s):  
Toshihiko Tani ◽  
Zhengkui Xu ◽  
David A. Payne
Keyword(s):  
Heat Treatment ◽  
Surface Energy ◽  
Sol Gel ◽  
Nucleation And Growth ◽  
Thin Layers ◽  
Energy Conditions ◽  
Chemical Characteristics ◽  
Interfacial Chemistry ◽  
Si Substrates

AbstractPLZT thin layers were deposited onto various substrates by sol-gel methods, and crystallized under different conditions and substrate treatments. Relationships are given for the chemical characteristics of the substrate's surface and the preferred orientations which develop on heat treatment. A preferred (111) orientation always developed for perovskite crystallized on Pt layers which contained Ti on the surface. This was attributed to the formation of Pt3Ti and the role of heteroepitaxial nucleation and growth sites. In addition, a preferred (100) orientation was also obtained on unannealed Pt/Ti/SiO2/Si substrates which were free of Ti on the surface. This was attributed to self-textured growth with flat faces striving for minimum surface energy conditions. The results are discussed in terms of the importance of interfacial chemistry on the control of texture for crystallization of PLZT thin layers on coated substrates.

Theoretical Study of Iron Heterogeneous Growth on the Surface of C60 Molecule

2014 ◽  
Vol 1081 ◽  
pp. 115-118
Author(s):  
Qi Cheng Liu ◽  
Yun Fang Li
Keyword(s):  
Crystallization Process ◽  
Theoretical Study ◽  
Covalent Bond ◽  
Md Simulations ◽  
Nucleation And Growth ◽  
Bond Forming ◽  
Regular Icosahedron ◽  
Molecule Dynamics ◽  
Molecule Surface ◽  
Regular Closed

Direct molecule dynamics (MD) simulations have also been performed to study heterogeneous nucleation and growth of iron on C60 molecule. The grown mechanism of this crystallization process was explored. The results indicate that 92 iron atoms attach to C60 molecule surface can form new covalent bond, forming a closed regular icosahedron. More atoms grow in layer to form bigger regular closed clathrate base on the structure of former one. As increase of atoms number, there will appear some crystal faces.

The Kinetics of Austenization Process of T91 Ferritic Heat-Resistant Steel

2011 ◽  
Vol 317-319 ◽  
pp. 42-47
Author(s):  
Li Fang Zhang ◽  
Yong Chang Liu
Keyword(s):  
Experimental Data ◽  
Phase Transformation ◽  
Kinetic Parameters ◽  
Nucleation And Growth ◽  
Transformation Model ◽  
Resistant Steel ◽  
Kinetic Characteristics ◽  
Heat Resistant Steel ◽  
Austenite Grain ◽  
Kinetics Of

By fitting the calculated transformed fraction according to developed phase-transformation model to the experimental data obtained by differential dilatometry, the kinetic characteristics of the austenitization process in T91 steels have been investigated. According to the kinetic parameters fitted, we recognize that the nucleation and growth of austenite grain are mainly controlled by the diffusion of carbon in ferritic and austenite respectively. In addition, by increasing the diffusion active energy of carbon in austenite, carbides hinder the motion of interface and thus refine austenite grain.

scholarly journals Non-Isothermal Crystallisation Kinetics of Polypropylene at High Cooling Rates and Comparison to the Continuous Two-Domain pvT Model

Polymers ◽  
2020 ◽  
Vol 12 (7) ◽  
pp. 1515
Author(s):  
Jonathan Alms ◽  
Christian Hopmann ◽  
Jian Wang ◽  
Tobias Hohlweck
Keyword(s):  
Injection Moulding ◽  
Polymer Processing ◽  
Nucleation And Growth ◽  
Growth Theory ◽  
Crystallisation Kinetics ◽  
Cooling Rates ◽  
Dsc Measurements ◽  
Wide Range ◽  
High Cooling Rates ◽  
Kinetics Of

The modelling of the correlation between pressure, specific volume and temperature (pvT) of polymers is highly important for applications in the polymer processing of semi-crystalline thermoplastics, especially in injection moulding. In injection moulding, the polymer experiences a wide range of cooling rates, for example, 60 °C/min near the centre of the part and up to 3000 °C/min near the mould walls. The cooling rate has a high influence on the pvT behaviour, as was shown in the continuous two-domain pvT model (CTD). This work examined the Hoffman–Lauritzen nucleation and growth theory used in the modified Hammami model for extremely high cooling rates (up to 300,000 °C/min) by means of Flash differential scanning calorimeter (DSC) measurements. The results were compared to those of the empirical continuous two-domain pvT model. It is shown that the Hammami model is not suitable to predict the crystallisation kinetics of polypropylene at cooling rates above 600 °C/min, but that the continuous two-domain pvT model is well able to predict crystallisation temperatures at high cooling rates.

scholarly journals Lithium carbonate sedimentation using flocculants with different ionic bases

2021 ◽  
pp. 20-20
Author(s):  
Yam Morales ◽  
Nelson Herrera ◽  
Kevin Pérez
Keyword(s):  
Sedimentation Rate ◽  
Rapid Growth ◽  
Crystallization Process ◽  
Lithium Carbonate ◽  
Rechargeable Batteries ◽  
Point Of View ◽  
Sedimentation Rates ◽  
Economic Point ◽  
Carbonate Sedimentation ◽  
Cationic Flocculant

Lithium has become a metal of enormous interest worldwide. The extensive use of rechargeable batteries for a range of applications has pushed for rapid growth in demand for lithium carbonate. This compound is produced by crystallization, by reaction with lithium chloride (in solution) and by adding sodium carbonate. Low sedimentation rates in the evaporation pools present a problem in the crystallization process. For this reason, in this work, mineral sedimentation tests were carried out with the use of two flocculant types with different ionic charges. The tests were carried out at a laboratory level using different dosages for each flocculant and measurements were performed to obtain the increase in the content of solids in the sediment. The anionic flocculant had better performance as compared to that of the cationic flocculant, increasing the sedimentation rate of lithium carbonate by up to 6.5. However, similar solids contents were obtained with the use of the cationic flocculant at 3.5 times lower dosage making it the flocculant of choice regarding the economic point of view.

Algorithms for the calculation of X-ray diffraction patterns from finite element data

2010 ◽  
Vol 43 (6) ◽  
pp. 1287-1299 ◽  
Author(s):  
E. Wintersberger ◽  
D. Kriegner ◽  
N. Hrauda ◽  
J. Stangl ◽  
G. Bauer
Keyword(s):  
Finite Element ◽  
Three Dimensional ◽  
Point Of View ◽  
X Ray Diffraction ◽  
Displacement Fields ◽  
X Ray ◽  
Si Substrates ◽  
Diffraction Patterns ◽  
Simulation Point ◽  
Ccd Detectors

A set of algorithms is presented for the calculation of X-ray diffraction patterns from strained nanostructures. Their development was triggered by novel developments in the recording of scattered intensity distributions as well as in simulation practice. The increasing use of two-dimensional CCD detectors in X-ray diffraction experiments, with which three-dimensional reciprocal-space maps can be recorded in a reasonably short time, requires efficient simulation programs to compute one-, two- and three-dimensional intensity distributions. From the simulation point of view, the finite element method (FEM) has become the standard tool for calculation of the strain and displacement fields in nanostructures. Therefore, X-ray diffraction simulation programs must be able to handle FEM data properly. The algorithms presented here make use of the deformation fields calculated on a mesh, which are directly imported into the calculation of diffraction patterns. To demonstrate the application of the developed algorithms, they were applied to several examples such as diffraction data from a dislocated quantum dot, from a periodic array of dislocations in a PbSe epilayer grown on a PbTe pseudosubstrate, and from ripple structures at the surface of SiGe layers deposited on miscut Si substrates.

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