Oriented Growth of SrTiO3 Films on Si(100) Substrates Using In—situ Cleaning By Excited Hydrogen

1988 ◽  
Vol 116 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Kazumutsu Azuma
Keyword(s):  
Electrical Properties ◽  
Epitaxial Growth ◽  
Oriented Growth ◽  
Si Substrates ◽  
Better Than

AbstractIn—situ cleaning of Si surfaces in vacuum was successfully performed using excited hydrogen and it was applied to epitaxial growth of SrTiO3 films on Si(100) substrates. Epitaxial growth of SrTiO3 films was observed under optimum cleaning conditions, however, the epitaxial nature was found to be destroyed for films thicker than 50 nm, which is probably due to the non—stoichiometry of the films. The electrical properties of the initially epitaxial SrTiO3 films grown on the cleaned Si substrates were better than those of polycrystalline ones.

The Growth and Characterisation of Ir Silicide Films on (111)Si

1990 ◽  
Vol 202 ◽  
Author(s):  
M.A. Lawn ◽  
R.G. Elliman ◽  
M.C. Ridgway ◽  
R. Leckey ◽  
J.D. Riley
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Grain Structure ◽  
Si Substrates ◽  
Fine Grain ◽  
Transmission Electron

ABSTRACTA study of the growth of thin Ir silicide films on (111)Si substrates has been undertaken. Thin (2.0nm) ir films deposited onto Si substrates under ultra-high vacuum conditions have been observed to display remarkable film continuity and fine grain structure (lnm). In situ annealing at 1000°C resulted in the formation of large regions (>10µm) of epitaxial IrSi3 islands (∼1µm) with identical epitaxial orientations. By means of annealing an as-deposited (2.0nm) Ir film stepwise to 1000°C within a transmission electron microscope the evolution of Ir silicide phases and morphologies were observed. The epitaxial growth of the semiconducting IrSi1.75 phase is reported along with the formation of Ir silicide islands at temperatures between 700°C and 800°C.

The Role of Barium In the Heteroepitaxial Growth of Insulator and Semiconductors On Silicon

1993 ◽  
Vol 334 ◽  
Author(s):  
T. K. Chu ◽  
F. Santiago ◽  
M. Stumborg ◽  
C. A. Huber
Keyword(s):  
Epitaxial Growth ◽  
Chemical Reactions ◽  
Surface Chemical ◽  
Metallic Elements ◽  
Heteroepitaxial Growth ◽  
Si Substrates ◽  
In Situ Xps ◽  
Surface Chemical Reactions

AbstractThe epitaxial growth of an insulator, BaF2, and semiconductors of the II-VI and the IV-VI families on Si substrates were carried out. In-situ XPS analyses during the growth of the first monolayers were used to study the surface chemical reactions involved. The results point to a common ingredient in these growths: that the Ba atoms are involved in forming interfacial compounds that would facilitate the heteroepitaxies. In the case of BaF2/Si, a BaSi2 compound has been identified previously. In the case of PbTe and CdTe, the heteroepitaxies on Si are made possible with the BaSi2 buffer. As a result, the impinging semiconductor molecules are broken up, and the metallic elements are ejected from the BaSi2 surface. A new surface chemical, BaTe, is thereby formed. These surface Ba compounds appear to be the dominant factors as the crystal orientations of the BaF2, CdTe, and PbTe layers are independent of those of the Si substrates.

scholarly journals CVD Conditions for MWCNTs Production and Their Effects on the Optical and Electrical Properties of PPy/MWCNTs, PANI/MWCNTs Nanocomposites by In Situ Electropolymerization

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 351
Author(s):  
Silvia Beatriz Brachetti-Sibaja ◽  
Diana Palma-Ramírez ◽  
Aidé Minerva Torres-Huerta ◽  
Miguel Antonio Domínguez-Crespo ◽  
Héctor Javier Dorantes-Rosales ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Synergistic Effects ◽  
Chemical Vapor ◽  
Decomposition Temperature ◽  
Processing Temperature ◽  
Crystallinity Degree ◽  
Decomposition Time ◽  
Better Than ◽  
Multiwalled Cnts

In this work, the optimal conditions of synthesizing and purifying carbon nanotubes (CNTs) from ferrocene were selected at the first stage, where decomposition time, argon fluxes, precursor amounts, decomposition temperature (at 1023 K and 1123 K), and purification process (HNO3 + H2SO4 or HCl + H2O2), were modulated through chemical vapor deposition (CVD) and compared to commercial CNTs. The processing temperature at 1123 K and the treatment with HCl + H2O2 were key parameters influencing the purity, crystallinity, stability, and optical/electrical properties of bamboo-like morphology CNTs. Selected multiwalled CNTs (MWCNTs), from 1 to 20 wt%, were electropolymerized through in-situ polarization with conductive polymers (CPs), poly(aniline) (PANI) and poly(pyrrole) (PPy), for obtaining composites. In terms of structural stability and electrical properties, MWCNTs obtained by CVD were found to be better than commercial ones for producing CPs composites. The CNTs addition in both polymeric matrixes was of 6.5 wt%. In both systems, crystallinity degree, related to the alignment of PC chains on MWCNTs surface, was improved. Electrical conductivity, in terms of the carrier density and mobility, was adequately enhanced with CVD CNTs, which were even better than the evaluated commercial CNTs. The findings of this study demonstrate that synergistic effects among the hydrogen bonds, stability, and conductivity are better in PANI/MWCNTs than in PPy/MWCNTs composites, which open a promissory route to prepare materials for different technological applications.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

A High Angle, Double Tilting Cold Stage for the AEI EM7

1974 ◽  
Vol 32 ◽  
pp. 450-451
Author(s):  
P.R. Swann ◽  
A.E. Lloyd
Keyword(s):  
Habit Plane ◽  
Temperature Control ◽  
Tilt Angle ◽  
Cooling System ◽  
Thermal Drift ◽  
High Angle ◽  
Cold Stage ◽  
High Degree ◽  
Better Than

Figure 1 shows the design of a specimen stage used for the in situ observation of phase transformations in the temperature range between ambient and −160°C. The design has the following features a high degree of specimen stability during tilting linear tilt actuation about two orthogonal axes for accurate control of tilt angle read-out high angle tilt range for stereo work and habit plane determination simple, robust construction temperature control of better than ±0.5°C minimum thermal drift and transmission of vibration from the cooling system.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

STUDIES ON THE AROMATISATION OF NEUTRAL STEROIDS IN PREGNANT WOMEN

1964 ◽  
Vol 45 (4) ◽  
pp. 535-559 ◽  
Author(s):  
E. Bolté ◽  
S. Mancuso ◽  
G. Eriksson ◽  
N. Wiqvist ◽  
E. Diczfalusy
Keyword(s):  
Pregnant Women ◽  
Comparative Studies ◽  
Chorionic Gonadotrophin ◽  
Human Chorionic Gonadotrophin ◽  
Radioactive Material ◽  
Placental Barrier ◽  
Therapeutic Abortion ◽  
Limited Ability ◽  
Better Than

ABSTRACT In 15 cases of therapeutic abortion by laparotomy the placenta was disconnected from the foetus and perfused in situ with tracer amounts of radioactive dehydroepiandrosterone (DHA), dehydroepiandrosterone sulphate (DHAS), androst-4-ene-3,17-dione (A), testosterone (T) and 17β-oestradiol (OE2). Analysis of the placentas, perfusates and urine samples revealed an extensive aromatisation of DHA, A and T; more than 70% of the radioactive material recovered was phenolic, and at least 80 % of this phenolic material was identified as oestrone (OE1), 17β-oestradiol (OE2) and oestriol (OE3), the latter being detected only in the urine. Comparative studies indicated that A and T were aromatised somewhat better than DHA and that all three unconjugated steroids were aromatised to a much greater extent than DHAS. Radioactive OE1 and OE2 were isolated and identified in the placentas and perfusates, but no OE3, epimeric oestriols, or ring D ketols could be detected in these sources, not even when human chorionic gonadotrophin (HCG) was added to the blood prior to perfusion. Lack of placental 16-hydroxylation was also apparent when OE2 was perfused. Regardless of the precursor perfused, there was three times more OE2 than OE1 in the placenta and three times more OE1 than OE2 in the perfusate. This was also the case following perfusion with OE2. The results are interpreted as suggesting the existence in the pregnant human of a placental »barrier« limiting the passage of circulating androgen. The barrier consists of a) limited ability to transfer directly DHAS and b) an enzymic mechanism resulting in the rapid and extensive aromatisation of the important androgens DHA, A and T.

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