The Role of thin Low Temperature Deposited GaAs Films on the two Step Growth of GaAs on Si By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
Hajine Inuzuka ◽  
Yasutoshi Suzuki ◽  
Naomi Awano ◽  
Kunihiko Hara
Keyword(s):  
Structural Change ◽  
Low Temperature ◽  
Three Dimensional ◽  
Gaas Layer ◽  
High Quality ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Gaas Films ◽  
Step Growth

AbstractThe structural change of the thin low temperature (~450°C) deposited GaAs films and the role for conventional temperature growth were studied by RHEED and cross-sectional TEN observation. The formation of the threedimensional high quality single crystalline islands from continuous twin GaAs layer deposited at low temperature (~450°C) was clarified. These three-dimensional islands act as the seeds for conventional temperature growth.

Growth and Characterizations of Gaas on Inp with Different Buffer Structures by Molecular Beam Epitaxy

1989 ◽  
Vol 148 ◽  
Author(s):  
Xiaoming Liu ◽  
Henry P. Lee ◽  
Shyh Wang ◽  
Thomas George ◽  
Eicke R. Weber ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Gaas Layer ◽  
Optical Quality ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Layer Structures ◽  
Gaas Films ◽  
Initial Deposition ◽  
Strained Layer Superlattices

ABSTRACTWe report the growth and characterizations of 31μm thick GaAs films grown on (100) InP substrates by MBE employing different buffer layer structures during the initial deposition. The buffer layer structures under study are: 1) GaAs layer grown at low temperature; 2) GaAs layer grown at low temperature plus two sets of In0.08Ga0.92As/GaAs strained layer superlattices (SLS) and 3) a transitional compositionally graded InxGal-xAs layer between the InP substrate and the GaAs film. After the buffer layer deposition, the growth was continued by conventionalMBE to a total thickness of 3μm for all samples. From the 77K photoluminescence (PL) measurement, it was found that the sample with SLS layers has the highest PL intensity and the narrowest PL linewidth. Cross-sectional transmission electron microscopy (TEM) studies showed that the SLS is effective in reducing the propagation of threading dislocations and explains the observed superior optical quality from the PL measurement.

Low temperature growth of three-dimensional network of graphene for high-performance supercapacitor electrodes

2018 ◽  
Vol 218 ◽  
pp. 90-94 ◽  
Author(s):  
Li Zheng ◽  
Xinhong Cheng ◽  
Peiyi Ye ◽  
Lingyan Shen ◽  
Qian Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
Three Dimensional ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Dimensional Network

scholarly journals Factors related to the role of programme directors in association with quality in postgraduate medical education – a cross-sectional study

2019 ◽  
Vol 19 (1) ◽  
Author(s):  
Hanna Wijk ◽  
Sari Ponzer ◽  
Hans Järnbert-Pettersson ◽  
Lars Kihlström ◽  
Jonas Nordquist
Keyword(s):  
Medical Education ◽  
Postgraduate Medical Education ◽  
Classification Tree ◽  
Cross Sectional Study ◽  
Sectional Study ◽  
High Quality ◽  
Cross Sectional ◽  
Programme Director ◽  
Factors Associated

Abstract Background Educational leaders have been pointed out as being important for quality of medical education. However, their actual influence on the education can be limited. At the postgraduate level, educational leadership and its connection with quality is underexplored and knowledge about how to increase its impact is lacking. An increased understanding could be used in order to prioritize actions for strengthening the role. The aim of this study was to investigate factors related to the role of programme director associated with quality in postgraduate medical education. Methods A cross-sectional study was carried out. A questionnaire was sent to programme directors in Sweden (n = 519) comprising questions about background factors, work characteristics, work tasks, hindering and enabling factors, and the Utrecht Work Engagement Scale. A logistic regression and classification tree were used to identify factors associated with high qualitative education, defined as compliance with national regulations. Results The response rate was 54% (n = 279). In total, 62% of the programme directors reported high quality and factors associated with high quality included experiences of communication with residents, superiors and supervisors, and support from the supervisors. Other factors were consensus regarding postgraduate medical education at the workplace, adequate financial resources, the programme directors’ competence, and their perceived impact on education. Factors of particular importance seemed to differ depending on whether the programme directors were responsible for one or for multiple units. Most high-quality education was found in cases where programme directors were responsible for a single unit and perceived sufficient impact on education. Conclusions These results indicated that there was an association between factors related to programme director and quality in postgraduate medical education. The findings pointed out the importance of combining activities at both individual, group and organizational levels. Relational aspects should not be underestimated; faculty development and involvement are crucial.

Role of Hydrogen Dilution in the Low-Temperature Growth of Nanocrystalline Si:H Thin Films from SiH4/H2Mixture

2009 ◽  
Vol 11 (3) ◽  
pp. 297-301 ◽  
Author(s):  
Chen Chengzhao ◽  
Qiu Shenghua ◽  
Liu Cuiqin ◽  
Wu Yandan ◽  
Li Ping ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Hydrogen Dilution

The Role of Atomic Hydrogen and Oxygen in Low Temperature Growth of Diamond by Microwave Plasma Assisted Cvd

1992 ◽  
Vol 270 ◽  
Author(s):  
Y. Muranaka ◽  
H. Yamashita ◽  
H. Miyadera
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Microwave Plasma ◽  
Natural Diamond ◽  
Diamond Films ◽  
Microwave Plasmas ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Good Crystallinity

ABSTRACTDiamond films grown in the microwave plasmas of CO(7–8%)-O2(0–2.2%)-H2 systems in the range of 130–750°C were characterized by scanning electron microscopy, Raman spectroscopy, and cathodoluminescence (CL) studies. The films grown in the CO-O2-H2 system had much better crystallinity than those grown in the CO-H2 system. This was because oxygen extremely purified diamond films by suppressing polyacetylene inclusion, and prohibited the vacancy formation in the crystallites. These oxygen functions have indicated the possibility that high quality diamond films (FWI-tM of the diamond Raman peak =4.0–4. lcm−1) close to natural diamond (FWHM=3.0cm−1) were obtained in the CO(8%)-O2(2.2%)-H2 system between 400 and 750°C. Though crystallinity deterioration occurred at 130°C, the obtained film (FWHM=10.2cm−1) in the CO(8%)-O2(2.2%)-H 2 system was of good crystallinity comparable to those (FWHM=7–21cm−1) grown by conventional CVD processes and gas systems between 590 and 1327°C. The CO-O2-H2 microwave plasma was concluded to be one of the best environment for the low temperature growth of highly purified diamond films of good crystallinity.

Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

2018 ◽  
Vol 140 (1) ◽  
Author(s):  
Asisa Kumar Panigrahy ◽  
Kuan-Neng Chen
Keyword(s):  
Low Temperature ◽  
Integrated Circuit ◽  
Large Scale ◽  
Three Dimensional ◽  
3D Ic ◽  
Bonding Technology ◽  
Three Dimensional Integrated Circuit ◽  
Low Temperature Bonding ◽  
Cu Bonding

Arguably, the integrated circuit (IC) industry has received robust scientific and technological attention due to the ultra-small and extremely fast transistors since past four decades that consents to Moore's law. The introduction of new interconnect materials as well as innovative architectures has aided for large-scale miniaturization of devices, but their contributions were limited. Thus, the focus has shifted toward the development of new integration approaches that reduce the interconnect delays which has been achieved successfully by three-dimensional integrated circuit (3D IC). At this juncture, semiconductor industries utilize Cu–Cu bonding as a key technique for 3D IC integration. This review paper focuses on the key role of low temperature Cu–Cu bonding, renaissance of the low temperature bonding, and current research trends to achieve low temperature Cu–Cu bonding for 3D IC and heterogeneous integration applications.

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