A Rapid Specimen Preparation Technique For Cross-Section Tem Investigation Of Semiconductors and Metals

1987 ◽  
Vol 115 ◽  
Author(s):  
J. Vanhellemont ◽  
H. Bender ◽  
L. Rossou
Keyword(s):  
Metal Oxide ◽  
Cross Section ◽  
Compound Semiconductors ◽  
Layered Structures ◽  
Specimen Preparation ◽  
Silicon Compound ◽  
Preparation Technique ◽  
Oxide Interfaces ◽  
Wide Applicability ◽  
Metal Metal

ABSTRACTA simple and rapid specimen preparation technique for the cross section TEM investigation of layered structures is discussed. Its wide applicability is illustrated for the investigation of processed silicon, compound semiconductors, silicon on quartz and also for metal/metal oxide interfaces.

Preparation of Large Thin Area Vlsi Tem Specimens by Dimpling With A “Flatting Tool”

1991 ◽  
Vol 254 ◽  
Author(s):  
Helen L. Humiston ◽  
Bryan M. Tracy ◽  
M. Lawrence ◽  
A. Dass
Keyword(s):  
Cross Section ◽  
Milling Time ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Ion Milling ◽  
Sampling Area ◽  
Preparation Methods

AbstractAn alternative VLSI TEM specimen preparation technique has been developed to produce 100μm diameter electron transparent thin area by using a conventional dimpler with a texmet padded ‘flatting tool’ for dimpling and a microcloth padded ‘flatting tool’ for polishing, followed by low angle ion milling. The advantages of this technique are a large sampling area and shorter milling times than conventional specimen preparation methods. In the following, we report the details of the modified dimpling technique. The improvements in available electron transparency, and a decrease in ion milling time are demonstrated with the preparation of planar and cross section VLSI device samples.

scholarly journals Strong metal–metal interaction and bonding nature in metal/oxide interfaces with large mismatches

2019 ◽  
Vol 179 ◽  
pp. 237-246 ◽  
Author(s):  
Hongping Li ◽  
Mitsuhiro Saito ◽  
Chunlin Chen ◽  
Kazutoshi Inoue ◽  
Kazuto Akagi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Interfaces ◽  
Metal Interaction ◽  
Metal Metal

scholarly journals Rapid Cross-Section TEM Specimen Preparation of III-V Materials

2003 ◽  
Vol 11 (1) ◽  
pp. 29-32 ◽  
Author(s):  
R. Beanland
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Limited Resources ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Sample Type ◽  
Transmission Electron ◽  
Conventional Methods ◽  
The Cross

AbstractCross-section transmission electron microscope (TEM) specimen preparation of Ill-V materials using conventional methods can be a painful and time-consuming activity, with a day or more from receipt of a sample to examination in the TEM being the norm. This article describes the cross-section TEM specimen preparation technique used at Bookham Caswell. The usual time from start to finish is <1 hour. Up to 10 samples can be prepared at once, depending upon sample type. Most of the tools used are widely available and inexpensive, making the technique ideal for use in institutions with limited resources.

Metal/Metal-Oxide Interfaces: How Metal Contacts Affect the Work Function and Band Structure of MoO3

2012 ◽  
Vol 23 (2) ◽  
pp. 215-226 ◽  
Author(s):  
Mark T. Greiner ◽  
Lily Chai ◽  
Michael G. Helander ◽  
Wing-Man Tang ◽  
Zheng-Hong Lu
Keyword(s):  
Band Structure ◽  
Metal Oxide ◽  
Work Function ◽  
Metal Contacts ◽  
Oxide Interfaces ◽  
Metal Metal

Metallic back-contact interface design in photoelectrochemical devices

2016 ◽  
Vol 4 (38) ◽  
pp. 8989-8996 ◽  
Author(s):  
Ofer Neufeld ◽  
Almog S. Reshef ◽  
Leora Schein-Lubomirsky ◽  
Maytal Caspary Toroker
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Structure Analysis ◽  
Interface Design ◽  
Back Contact ◽  
Contact Interface ◽  
Oxide Interfaces ◽  
Metal Metal

DFT+U electronic structure analysis for a set of metal/metal-oxide interfaces that are important for a variety of electronic applications.

A Fast and Precise Specimen Preparation Technique for TEM Investigation of Prespecified Areas of Semiconductor Devices

1990 ◽  
Vol 199 ◽  
Author(s):  
Albert Romano ◽  
Jan Vanhellemont ◽  
Hugo Bender
Keyword(s):  
Cross Section ◽  
Semiconductor Devices ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Ion Milling ◽  
Special Equipment ◽  
Plan View

ABSTRACTIn this paper we present a rapid and highly precise plan view and cross-section specimen preparation technique for the localized thinning of semiconductor devices for TEM investigation. No special equipment except the commercially available one is required. Crosssection preparation takes about 6 hours, while plan view takes about 4 hours. Prespecified areas of 0.6 μm wide and 10 μm long can easily be thinned with transparency for CTEM and HREM. Using an iterative ion milling procedure allows to scan a complete device in HREM.

Structural Relaxations At Metal / Metal Oxide Interfaces

1991 ◽  
Vol 238 ◽  
Author(s):  
W. Mader
Keyword(s):  
Metal Oxide ◽  
Relative Strength ◽  
Model Systems ◽  
Misfit Dislocations ◽  
Orientation Relationships ◽  
Oxide Systems ◽  
Oxide Interfaces ◽  
Metal Metal ◽  
High Resolution Tem ◽  
Interacting Systems

ABSTRACTRecent work is reviewed on the structure of metal/metal oxide interfaces in model systems with well defined orientation relationships and boundary inclination. Structural relaxations established upon interface formation may be described as misfit dislocations which can be investigated using conventional and high resolution TEM. The conditions for obtaining informations at an atomistic scale using HRTEM are critically discussed. Specifically, geometrical restrictions are found to be critical in HRTEM study of {111} interfaces in fee metal -fee oxide systems. Different misfit dislocation networks at {100} interfaces in fee metal - fee oxide systems were observed which may be correlated to the relative strength of metal-anion and metal-cation bonds at the interface. In strongly interacting systems misfit dislocations can possess an equilibrium stand-off distance from the interface. In the system Nb-Al2O3 the interface is shown to be coherent by the registry of atomic columns adjacent to the interface. In this configuration energy is minimized by unbroken strong interfacial bonds and misfit localization in the elastically softer metal.

Sign in / Sign up

Export Citation Format

Share Document