Surface Chemical Characterization of Internal Interfaces Generated Within Thin-Film Fe-Ti Hydrides

1987 ◽  
Vol 111 ◽  
Author(s):  
Jeffrey H. Sanders ◽  
Bruce J. Tatarchuk

AbstractFeTi is considered an excellent candidate for the reversible storage of hydrogen and has been studied extensively in an attempt to understand the bulk activation needed for this material before use. Segregation of TiO2 to the surface has been noted to occur during activation explaining a slight loss of efficiency per hydride cycle, however, characterization by a host of bulk and surface sensitive techniques has not revealed the cause of this decomposition process.10 nm FeTi samples were prepared in a UHV evaporator both with and without palladium coatings. Post treatment characterization was performed with backscatter conversion electron Mossbauer spectroscopy (CEMS), XPS and SIMS. CEMS is a powerful tool for providing stoichiometric, electronic, magnetic, chemical, and particle size information of iron at depths down to 100 nm. XPS and SIMS are useful to gain quantitative and chemical state information from the topmost 2 nm and the topmost monolayer, respectively. Activation treatments consisted of annealing at 573K and 623K followed by reduction at 573K. Results indicate that ppm levels of H2O in H2 are sufficient to decompose the FeTi alloy and produce TiO2 and Fe metal domains at the surface. Also, at 573K in vacuum, a solid-state reaction was found to occur between Fe oxides and FeTi to produce Fe metal and TiO2. The Pd-FeTi interface was probed with CEMS and the results demonstrate hydrogen dissociation and migration in the absence of alloy decomposition. Our approach uses nondestructive-depth profiling of non-Pd coated FeTi samples along with interfacial information from Pd-FeTi specimens to obtain unique insight into the decomposition process.

2022 ◽  
Author(s):  
Katarina Bartalska ◽  
Verena Hübschmann ◽  
Medina Korkut-Demirbaş ◽  
Ryan John Abat Cubero ◽  
Alessandro Venturino ◽  
...  

Brain organoids differentiated from human induced pluripotent stem cells provide a unique opportunity to investigate the development, organization and connectivity of neurons in a complex cellular environment. However, organoids usually lack microglia, brain-resident immune cells which are both present in the early human embryonic brain and participate in neuronal circuit development. Here, we find that microglia innately develop in unguided retinal organoid differentiation between week 3 and 4 in 2.5D culture and appear later in floating, non-pigmented, 3D-cystic compartments. We enriched for cystic structures using a low-dosed BMP4 application and performed mass spectrometry, thus defining the protein composition of microglia-containing compartments. We found that cystic compartments expressed both mesenchymal and epithelial markers with microglia enriched in the mesenchymal region. Interestingly, microglia-like cells started to express the border-associated macrophage marker CD163. The preferential localization of human microglia to a mesenchymal compartment provides insight into the behavior and migration of microglia. The model will ultimately allow detailed study of these enigmatic cells and how they enter and distribute within the human brain.


1999 ◽  
Vol 69 (1-2) ◽  
pp. 165-179 ◽  
Author(s):  
B. J. Love ◽  
J. Baborowski ◽  
M. Charbonnier ◽  
M. Romand

2015 ◽  
Vol 32 (0) ◽  
pp. 176-183 ◽  
Author(s):  
Pradip ◽  
Charles C. H. Li ◽  
Douglas W. Fuerstenau

2013 ◽  
Vol 90 ◽  
pp. 78-89 ◽  
Author(s):  
Matthieu Gaucher ◽  
Thomas Dugé de Bernonville ◽  
David Lohou ◽  
Sylvain Guyot ◽  
Thomas Guillemette ◽  
...  

2016 ◽  
Vol 11 (2) ◽  
pp. 02A301 ◽  
Author(s):  
Michael Taylor ◽  
David Scurr ◽  
Matthias Lutolf ◽  
Lee Buttery ◽  
Mischa Zelzer ◽  
...  

1985 ◽  
Vol 65 ◽  
Author(s):  
Richard W. Linton ◽  
Scott R. Bryan ◽  
X. B. Cox ◽  
Dieter P. Griffis

The surface layers on coal fly ash particles are of special environmental interest in that concentration enrichments of trace elements may occur [1], thereby enhancing the potential bioavailability of toxic species. Little research, however, has been devoted to the analytical characterization of intraparticle and interparticle distributions of trace elements. The high detection sensitivity, spatial resolution, and depth profiling capabilities of secondary ion mass spectrometry (SIMS), coupled to digital image acquisition and processing [2], permit three-dimensional (3D) compositional maps for collections of individual micron-sized particles. The 3D analysis of trace element distributions in coal fly ash particles is the subject of this SIMS investigation


2016 ◽  
Vol 102 ◽  
pp. 319-325 ◽  
Author(s):  
Shaohui Li ◽  
Zechao Di ◽  
Liang Cheng ◽  
Zhongguo Liu ◽  
Jicheng Piao ◽  
...  

2008 ◽  
Vol 1073 ◽  
Author(s):  
Thierry Conard ◽  
Wilfried Vandervorst

ABSTRACTOxides have always been an integral part of semiconductor manufacturing both in front and back-end processing. With the necessary increase in performance, the demand on these oxides has been increasing leading to their (future) replacement by more complex materials, such as high-k's in gate oxide and metal gates. With the increasing material complexity, a thorough characterization of all aspects of these materials is necessary, covering, for instance, surfaces and interfaces, nucleation, growth, atomic structure, …This article focuses on the characterization of front-end oxides and their interfaces. It shows that detailed information can be achieved by sophisticated experimental techniques such as synchrotron radiation, high energy ERD or AtomProbe but that adequate sample preparation and/or analysis by a combination of more routinely available techniques may achieve similar results. This is shown through the study of three different systems/problems in the gate stack analysis. We will first focus on the determination of substrate surface preparation conditions before deposition and their influence on growth mode and the growth characteristics by different growth techniques (ALD, MOCVD, …). Second, we present the possibilities of compositional depth profiling of thin layers both with nuclear techniques and Angle-Resolved XPS. Finally, we will show that using conventional XPS and a combination of front and back-side analysis, the interface between high-k oxide and metal gates can be investigated. More examples of gate stack characterization can be found elsewhere


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