Control of Grain Boundary Location By Selective Nucleation Over Amorphous Substrates

1987 ◽  
Vol 106 ◽  
Author(s):  
T. Yonehara ◽  
Y. Nishigaki ◽  
H. Mizutani ◽  
S. Kondoh ◽  
K. Yamagata ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Grain Boundary ◽  
Small Area ◽  
Substrate Surface ◽  
Growth Technique ◽  
Nucleation Sites ◽  
Amorphous Substrates ◽  
Boundary Location

ABSTRACTA selective nucleation based crystal-growth-technique over amorphous substrates is originated. The method manipulates nucleation sites and periods and hence, controls the grain boundary location by modifing the substrate surface. In Si, small Si3 N4 nucleation sites are formed, 1–2 pm in diameter, 100 μm in period, over Sio2. One Si nucleus is formed exclusively in the small area of Si3 N4 by CVD. The highly faceted and periodically located nuclei grow over SiO2 up to 100 μm in diameter before impingement. A MOS-FET fabricated inside the island operates comparably to the bulk Si control

Selective Growth of Si Crystals over Amorphous Substrates Seeded by Solid-State Agglomeration of Patterned Si

1989 ◽  
Vol 164 ◽  
Author(s):  
K. Yamagata ◽  
T. Yonehara
Keyword(s):  
Solid State ◽  
Grain Boundary ◽  
Single Crystals ◽  
Substrate Surface ◽  
Selective Growth ◽  
Growth Technique ◽  
Selective Epitaxial Growth ◽  
Amorphous Substrates ◽  
Crystalline Forms ◽  
Specific Orientation

AbstractSelective growth of Si crystals over amorphous substrates, seeded by agglomerated single domained Si crystals is demonstrated. In this method, Si crystal seeds are periodically placed and selectively overgrown until impingement upon adjacent crystals, resulting in a matrix of large Si islands with controlled grain boundary locations. Si seeds are formed over amorphous SiO2 by the solid-state agglomeration phenomenon, and grown selectively up to 100 μm by CVD selective epitaxial growth technique. The grown crystals are classified in three crystalline forms of single crystals, primary twins, and multiple twins. However, most are single crystals with a specific orientation of (110) normal to the substrate surface.

Single Crystal Growth of High-Pressure Phases of Ice and Salt Hydrate Far Below the Original Melting Point by Mixing Alcohol: Crystal Structure Determination of Magnesium Chloride Heptahydrate

2020 ◽  
Author(s):  
Keishiro Yamashita ◽  
Kazuki Komatsu ◽  
Hiroyuki Kagi
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Room Temperature ◽  
Growth Technique ◽  
Salt Hydrate ◽  
X Ray

An crystal-growth technique for single crystal x-ray structure analysis of high-pressure forms of hydrogen-bonded crystals is proposed. We used alcohol mixture (methanol: ethanol = 4:1 in volumetric ratio), which is a widely used pressure transmitting medium, inhibiting the nucleation and growth of unwanted crystals. In this paper, two kinds of single crystals which have not been obtained using a conventional experimental technique were obtained using this technique: ice VI at 1.99 GPa and MgCl<sub>2</sub>·7H<sub>2</sub>O at 2.50 GPa at room temperature. Here we first report the crystal structure of MgCl2·7H2O. This technique simultaneously meets the requirement of hydrostaticity for high-pressure experiments and has feasibility for further in-situ measurements.

scholarly journals Growth of single crystals in the (Na1/2Bi1/2)TiO3–(Sr1–xCax)TiO3 system by solid state crystal growth

2021 ◽  
Author(s):  
Phan Gia Le ◽  
Huyen Tran Tran ◽  
Jong-Sook Lee ◽  
John G. Fisher ◽  
Hwang-Pill Kim ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Solid State ◽  
Single Crystal ◽  
Single Crystals ◽  
Piezoelectric Properties ◽  
Single Crystal Growth ◽  
Crystal Growth Rate ◽  
Large Strains ◽  
Growth Technique ◽  
The Matrix

AbstractCeramics based on (Na1/2B1/2)TiO3 are promising candidates for actuator applications because of large strains generated by an electric field-induced phase transition. For example, the (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 system exhibits a morphotropic phase boundary at x = 0.2–0.3, leading to high values of inverse piezoelectric constant d*33, which can be further improved by the use of single crystals. In our previous work, single crystals of (Na1/2B1/2)TiO3-SrTiO3 and (Na1/2B1/2)TiO3-CaTiO3 were grown by the solid state crystal growth technique. Growth in the (Na1/2B1/2)TiO3-SrTiO3 system was sluggish whereas the (Na1/2B1/2)TiO3-CaTiO3 single crystals grew well. In the present work, 0.8(Na1/2Bi1/2)TiO3-0.2(Sr1−xCax)TiO3 single crystals (with x = 0.0, 0.1, 0.2, 0.3, 0.4) were produced by the solid state crystal growth technique in an attempt to improve crystal growth rate. The dependence of mean matrix grain size, single crystal growth distance, and electrical properties on the Ca concentration was investigated in detail. These investigations indicated that at x = 0.3 the matrix grain growth was suppressed and the driving force for single crystal growth was enhanced. Replacing Sr with Ca increased the shoulder temperature Ts and temperature of maximum relative permittivity Tmax, causing a decrease in inverse piezoelectric properties and a change from normal to incipient ferroelectric behavior.

Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator

2004 ◽  
Vol 808 ◽  
Author(s):  
Hirokazu Kaki ◽  
Takehiko Ootani ◽  
Susumu Horita
Keyword(s):  
Grain Boundary ◽  
Pulse Laser ◽  
Pulse Number ◽  
Novel Technique ◽  
Thermal Distribution ◽  
Irradiation Pulse ◽  
Linearly Polarized ◽  
Boundary Location ◽  
Amorphous Si ◽  
Si Thin Film

ABSTRACTIn order to obtain a large silicon (Si) grain and to control the location of its boundary in a Si film melting-crystallized by a pulse laser, we have proposed to use periodic thermal distribution spontaneously induced by irradiation of a linearly polarized laser beam. We estimated the suitable amorphous Si (a-Si) thickness taking account of multiple reflection theoretically and confirmed it experimentally. Also, we proposed a novel technique to reduce the irradiation pulse number to control the grain boundary location stably in the crystallized Si film, in which the elastic wave was generated on the surface of a-Si film prior to melting-crystallization by using an ultra sonic oscillator. Owing to this technique, we can control the grain boundary location periodically with only 1 pulse irradiation in the crystallized Si film.

The atomic structure of growth interfaces in Y–Ba–Cu–O thin films

1991 ◽  
Vol 6 (11) ◽  
pp. 2264-2271 ◽  
Author(s):  
R. Ramesh ◽  
A. Inam ◽  
D.M. Hwang ◽  
T.S. Ravi ◽  
T. Sands ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Structure ◽  
Film Growth ◽  
Substrate Surface ◽  
Oriented Growth ◽  
Surface Steps ◽  
Nucleation Sites ◽  
Oriented Films ◽  
Second Phases ◽  
Ledge Mechanism

We have examined the atomic structure of growth interfaces in thin films of Y–Ba–Cu–O grown on [001] perovskite or cubic substrates. At substrate heater temperatures in the range of 780–820 °C c-axis oriented growth is observed on these substrates. On SrTiO3, the first layer appears to be either a BaO or a CuO2 plane while on LaAlO3 the first layer appears to be a CuO chain layer. The mismatch on the a-b plane is accommodated by the formation of interface dislocations. Defects on the substrate surface propagate as defects in the film. These defects are primarily translational boundaries and in some cases second phases. At lower substrate heater temperatures, i.e., 650–700 °C, a, b-axis growth dominates. Defects and steps on the substrate surface are more detrimental in the growth of a, b-axis oriented films, since they tend to favor the nucleation of c-axis oriented domains. This is ascribed to the ledge mechanism of c-axis film growth, for which the surface steps are good nucleation sites.

scholarly journals A model of crystal-size evolution in polar ice masses

2014 ◽  
Vol 60 (221) ◽  
pp. 463-477 ◽  
Author(s):  
Felix NG ◽  
T.H. Jacka
Keyword(s):  
Crystal Growth ◽  
Dislocation Density ◽  
Grain Boundary ◽  
Crystal Size ◽  
Boundary Migration ◽  
Ice Core ◽  
Ice Cores ◽  
Grain Boundary Migration ◽  
Shallow Subsurface ◽  
The Mean

AbstractIn the deep ice cores drilled at the GRIP, NGRIP and GISP2 sites in Greenland and at Byrd Station and the summit of Law Dome in Antarctica, the mean crystal size increases with depth in the shallow subsurface and reaches steady values at intermediate depth. This behaviour has been attributed to the competition between grain-boundary migration driven crystal growth and crystal polygonization, but the effects of changing crystal dislocation density and non-equiaxed crystal shape in this competition are uncertain. We study these effects with a simple model. It describes how the mean height and width of crystals evolve as they flatten under vertical compression, and as crystal growth and polygonization compete. The polygonization rate is assumed to be proportional to the mean dislocation density across crystals. Migration recrystallization, which can affect crystal growth via strain-induced grain boundary migration but whose impact on the mean crystal size is difficult to quantify for ice at present, is not accounted for. When applied to the five ice-core sites, the model simulates the observed crystal-size profiles well down to the bottom of their steady regions, although the match for Law Dome is less satisfactory. Polygonization rate factors retrieved for the sites range from 10–5 to 10–2 a–1. We conclude that since crystal size and dislocation density evolve in a strongly coupled manner, consistent modelling requires multiple differential equations to track both of these variables. Future ice-core analysis should also determine crystal size in all three principal directions.

Nanometer Scale Mechanical Behavior of Grain Boundaries

2011 ◽  
Vol 1297 ◽  
Author(s):  
Chien-Kai Wang ◽  
Huck Beng Chew ◽  
Kyung-Suk Kim
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Virtual Work ◽  
Potential Interaction ◽  
Dislocation Nucleation ◽  
Nanometer Scale ◽  
Nonlinear Field ◽  
Boundary Slip ◽  
Nucleation Sites ◽  
Eam Potential

ABSTRACTA nonlinear field projection method has been developed to study nanometer scale mechanical properties of grain boundaries in nanocrystalline FCC metals. The nonlinear field projection is based on the principle of virtual work, for virtual variations of atomic positions in equilibrium through nonlocal interatomic interactions such as EAM potential interaction, to get field-projected subatomic-resolution traction distributions on various grain boundaries. The analyses show that the field projected traction produces periodic concentrated compression sites on the grain boundary, which act as crack trapping or dislocation nucleation sites. The field projection was also used to assess the nanometer scale failure processes of Cu Σ5 grain boundaries doped with Pb. It was revealed that the Pb dopants prevented the emission of dislocations by grain boundary slip and embrittles the grain boundary.

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