Low Temperature Plasma Enhanced CVD of ‘Device Quality’ Silicon Dioxide.

1987 ◽  
Vol 105 ◽  
Author(s):  
J. Batey ◽  
E. Tierney ◽  
T. N. Nguyen ◽  
J. W. Stasiak ◽  
J. Li
Keyword(s):  
Three Dimensional ◽  
Chemical Vapor ◽  
High Energy ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Thermal Budget ◽  
Direct Exposure ◽  
Energy Environment ◽  
Silicon Based ◽  
Substrate Temperatures

AbstractAs silicon-based technologies move towards submicron dimensions, vertical and three dimensional structures, the need for reduced thermal processing becomes more evident than ever. Currently, insulator (usually SiO2) growth and deposition contribute significantly to the total thermal budget, and it is clear that this will have to be reduced in future processes. In addition, many other applications require the deposition of high quality dielectrics at very low substrate temperatures, typically ≳ 350°C. Plasma-enhanced chemical vapor deposition (PECVD) is a technique which can be used to deposit insulators at suitably low temperatures, although it tends to produce SiO2 which exhibits poor electrical and physical properties and which forms poor interfaces with semiconductor substrates. Direct exposure to the high energy environment of the plasma is generally thought to be the main reason for this.

Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Charge Densities ◽  
Doped Silicon

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.

scholarly journals Superior Pseudocapacitive Storage of a Novel Ni3Si2/NiOOH/Graphene Nanostructure for an All-Solid-State Supercapacitor

2020 ◽  
Vol 13 (1) ◽  
Author(s):  
Jing Ning ◽  
Maoyang Xia ◽  
Dong Wang ◽  
Xin Feng ◽  
Hong Zhou ◽  
...  
Keyword(s):  
Solid State ◽  
High Performance ◽  
Large Scale ◽  
Specific Capacity ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Specific Area ◽  
High Energy ◽  
Scale Production ◽  
Free Standing

Abstract Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures, doping of thin films, and mechanisms for the construction of three-dimensional architectures. Herein, we synthesize creeper-like Ni3Si2/NiOOH/graphene nanostructures via low-pressure all-solid melting-reconstruction chemical vapor deposition. In a carbon-rich atmosphere, high-energy atoms bombard the Ni and Si surface, and reduce the free energy in the thermodynamic equilibrium of solid Ni–Si particles, considerably catalyzing the growth of Ni–Si nanocrystals. By controlling the carbon source content, a Ni3Si2 single crystal with high crystallinity and good homogeneity is stably synthesized. Electrochemical measurements indicate that the nanostructures exhibit an ultrahigh specific capacity of 835.3 C g−1 (1193.28 F g−1) at 1 A g−1; when integrated as an all-solid-state supercapacitor, it provides a remarkable energy density as high as 25.9 Wh kg−1 at 750 W kg−1, which can be attributed to the free-standing Ni3Si2/graphene skeleton providing a large specific area and NiOOH inhibits insulation on the electrode surface in an alkaline solution, thereby accelerating the electron exchange rate. The growth of the high-performance composite nanostructure is simple and controllable, enabling the large-scale production and application of microenergy storage devices.

Low-Temperature Plasma-Enahanced Chemical Vapor Deposition of Crystal Silicon Film from Dichlorosilane

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 44-48 ◽  
Author(s):  
Haiping Liu ◽  
Sughoan Jung ◽  
Yukihiro Fujimura ◽  
Chisato Fukai ◽  
Hajime Shirai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Low Temperature Plasma ◽  
Crystal Silicon ◽  
Temperature Plasma

Design of Plasma Discharge Structure for Surface Treatment of PP Film

2016 ◽  
Vol 693 ◽  
pp. 77-83 ◽  
Author(s):  
Yi Fang Wen ◽  
Tai Yong Wang ◽  
Hong Wei Wang
Keyword(s):  
Low Temperature ◽  
Hollow Cathode ◽  
Plasma Discharge ◽  
High Energy ◽  
Environment Pollution ◽  
Low Temperature Plasma ◽  
Cathode Plasma ◽  
Temperature Plasma ◽  
Discharge Structure ◽  
Before And After

Low temperature plasma, compared to liquid phase treatment, can effectively overcome the environment pollution, high energy loss and high cost as its high activity. The low temperature plasma, which is not only fairly friendly to the environment but also of less resource consumption, also can realize the cleaning, activating and grafting treatment for materials surface. Based on the numerical model of CRFHCP (Capacitive Radio Frequency Hollow Cathode Plasma) hollow cathode plasma discharge, the key point to affect plasma discharge was analyzed and the morphology of PP film before and after hollow cathode plasma discharge was analyzed. The results showed that the structure of plasma hollow cathode discharge can effectively improved the chemical behaviors of PP film.

GaN Three Dimensional Nanostructures

1995 ◽  
Vol 395 ◽  
Author(s):  
V. Dmitriev ◽  
K. Irvine ◽  
A. Zubrilov ◽  
D. Tsvetkov ◽  
V. Nikolaev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Blue Shift ◽  
High Energy ◽  
Peak Position ◽  
Organic Chemical ◽  
Nanoscale Structures ◽  
Dot Density ◽  
20 Nm

ABSTRACTWe report on the growth and characterization of three dimensional nanoscale structures of GaN. GaN dots were grown by metal organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. The actual size of the dots measured by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) ranged from ∼20 nm to more than 2 μm. The average dot density ranged from 107 to 109 cm−2. The single crystal structure of the dots was verified by reflectance high energy electron diffraction (HEED) and TEM. Cathodoluminescence (CL) and photoluminescence (PL) of the dots were studied at various temperatures and excitation levels. The PL and CL edge peak for the GaN dots exhibited a blue shift as compared with edge peak position for continuous GaN layers grown on SiC.

Silicon Nanowires Obtained by Low Temperature Plasma-Based Chemical Vapor Deposition.

2012 ◽  
Vol 1408 ◽  
Author(s):  
R. A. Puglisi ◽  
G. Mannino ◽  
S. Scalese ◽  
A. La Magna ◽  
V. Privitera
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Low Temperature Plasma ◽  
Si Substrate ◽  
Equivalent Thickness ◽  
Temperature Plasma ◽  
Inductively Coupled

ABSTRACTSilicon Nanowires (Si-NWs) are obtained by vapor-liquid-solid growth using an inductively coupled chemical vapor deposition system which works at temperatures lower than 400 °C. Gold nanodots are used as metal catalyst. The selective growth of Si-NWs on the gold nanodots is obtained by controlling the contribution coming from the uncatalyzed growth on the bare Si substrate. In this way the final NW length can be controlled, and it is not influenced by the thickness of the uncatalyzed layer. The important parameter ruling the NW growth is found to be the plasma power which governs the dissociation of the Si precursor gas. Final NW lengths of 1 μm are obtained at temperatures of 380 °C with a thickness of uncatalyzed layer equal to zero. Also the NW density is addressed in this work and it is optimised by increasing the gold equivalent thickness. The NW density is increased from 2.9×108 to 1.3×1010 cm-2, when the gold equivalent thickness passes from 1.8 nm to 2.2 nm.

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