Analysis of composition changes across the Si/SiOx interface using fresnel fringe contrast analysis
Keyword(s):
AbstractFresnel fringe contrast analysis and high resolution electron microscopy are used in conjunction to measure compositional and structural changes across the Si/SiOx interface with atomic resolution.
1989 ◽
Vol 47
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pp. 344-345
1997 ◽
Vol 3
(4)
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pp. 352-363
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1991 ◽
Vol 43
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pp. 13066-13072
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1986 ◽
Vol 1
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pp. 617-628
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1983 ◽
Vol 41
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pp. 738-739
1983 ◽
Vol 41
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pp. 730-731