TEM Studies of Ordering in MOCVD-Grown (GaIn)P on GaAs

1987 ◽  
Vol 104 ◽  
Author(s):  
S. McKernan ◽  
B. C. De Cooman ◽  
C. B. Carter ◽  
D. P. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Dark Field ◽  
Growth Surface ◽  
Gaas Substrates ◽  
High Resolution Images

ABSTRACTGaxIn(1−x)P epilayers grown on GaAs substrates by MOVPE, for different growth temperatures and values of x∼0.5, have been studied by electron microscopy. The results indicate that under certain conditions the ternary epilayer is ordered parallel to the (111) plane. Dark-field images obtained using the superlattice reflections reveal ordered domains of different orientations. High-resolution images have been obtained from the ordered domains. The structure of these domains is not perfect but contains many planar faults parallel to the growth surface.

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

Effect of strain on ADF-STEM high-resolution images

1991 ◽  
Vol 49 ◽  
pp. 666-667
Author(s):  
M. Kelly ◽  
D.M. Bird
Keyword(s):  
High Resolution ◽  
Strong Influence ◽  
Intensity Variation ◽  
Dark Field ◽  
Atomic Resolution ◽  
Strain Fields ◽  
High Resolution Image ◽  
Annular Dark Field ◽  
High Resolution Images ◽  
Interesting Alternative

It is well known that strain fields can have a strong influence on the details of HREM images. This, for example, can cause problems in the analysis of edge-on interfaces between lattice mismatched materials. An interesting alternative to conventional HREM imaging has recently been advanced by Pennycook and co-workers where the intensity variation in the annular dark field (ADF) detector is monitored as a STEM probe is scanned across the specimen. It is believed that the observed atomic-resolution contrast is correlated with the intensity of the STEM probe at the atomic sites and the way in which this varies as the probe moves from cell to cell. As well as providing a directly interpretable high-resolution image, there are reasons for believing that ADF-STEM images may be less suseptible to strain than conventional HREM. This is because HREM images arise from the interference of several diffracted beams, each of which is governed by all the excited Bloch waves in the crystal.

Computers and diffraction analysis

1989 ◽  
Vol 47 ◽  
pp. 44-45
Author(s):  
J. A. Eades
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Diffraction Analysis ◽  
Electron Diffraction Analysis ◽  
Image Simulation ◽  
Correct Interpretation ◽  
High Profile ◽  
High Resolution Images ◽  
Image Simulations

For well over two decades computers have played an important role in electron microscopy; they now pervade the whole field - as indeed they do in so many other aspects of our lives. The initial use of computers was mainly for large (as it seemed then) off-line calculations for image simulations; for example, of dislocation images.Image simulation has continued to be one of the most notable uses of computers particularly since it is essential to the correct interpretation of high resolution images. In microanalysis, too, the computer has had a rather high profile. In this case because it has been a necessary part of the equipment delivered by manufacturers. By contrast the use of computers for electron diffraction analysis has been slow to prominence. This is not to say that there has been no activity, quite the contrary; however it has not had such a great impact on the field.

Automatic Registering and Stitching of TEM/STEM Image Mosaics

2013 ◽  
Author(s):  
Chung-Ching Lin ◽  
Franco Stellari ◽  
Lynne Gignac ◽  
Peilin Song ◽  
John Bruley
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Vlsi Circuit ◽  
Significant Progress ◽  
Research Areas ◽  
Automated Method ◽  
Transmission Electron ◽  
Stem Image ◽  
High Resolution Images ◽  
Global Optimal

Abstract Transmission Electron Microscopy (TEM) and scanning TEM (STEM) is widely used to acquire ultra high resolution images in different research areas. For some applications, a single TEM/STEM image does not provide enough information for analysis. One example in VLSI circuit failure analysis is the tracking of long interconnection. The capability of creating a large map of high resolution images may enable significant progress in some tasks. However, stitching TEM/STEM images in semiconductor applications is difficult and existing tools are unable to provide usable stitching results for analysis. In this paper, a novel fully automated method for stitching TEM/STEM image mosaics is proposed. The proposed method allows one to reach a global optimal configuration of each image tile so that both missing and false-positive correspondences can be tolerated. The experiment results presented in this paper show that the proposed method is robust and performs well in very challenging situations.

scholarly journals Analytical High-resolution Electron Microscopy Reveals Organ-specific Nanoceria Bioprocessing

2017 ◽  
Vol 46 (1) ◽  
pp. 47-61 ◽  
Author(s):  
Uschi M. Graham ◽  
Robert A. Yokel ◽  
Alan K. Dozier ◽  
Lawrence Drummy ◽  
Krishnamurthy Mahalingam ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Analytical Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Transmission Electron ◽  
Analytical Electron ◽  
Organ Specific

This is the first utilization of advanced analytical electron microscopy methods, including high-resolution transmission electron microscopy, high-angle annular dark field scanning transmission electron microscopy, electron energy loss spectroscopy, and energy-dispersive X-ray spectroscopy mapping to characterize the organ-specific bioprocessing of a relatively inert nanomaterial (nanoceria). Liver and spleen samples from rats given a single intravenous infusion of nanoceria were obtained after prolonged (90 days) in vivo exposure. These advanced analytical electron microscopy methods were applied to elucidate the organ-specific cellular and subcellular fate of nanoceria after its uptake. Nanoceria is bioprocessed differently in the spleen than in the liver.

HIGH RESOLUTION ELECTRON MICROSCOPY OF THE HIGH Tc SUPERCONDUCTOR Bi2Sr2CaCu2O8+δ

1988 ◽  
Vol 02 (06) ◽  
pp. 835-839 ◽  
Author(s):  
M. HERVIEU ◽  
B. DOMENGES ◽  
C. MICHEL ◽  
B. RAVEAU
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction Study ◽  
High Resolution Electron Microscopy ◽  
Basic Structure ◽  
Tetragonal Symmetry ◽  
High Tc ◽  
Resolution Electron ◽  
High Resolution Images ◽  
New Superconductor

The new superconductor Bi 2 Sr 2 CaCu 2 O 8+δ with T c ranging from 80 to 105K, was studied by electron microscopy. The electron diffraction study shows a pseudo-tetragonal symmetry with a≈b≈5.4 Å and c≈30.7 Å and satellites along a, which settle in an incommensurate way. The high resolution images agree with the proposed basic structure. The stacking of the ( BiO y)2 and [ Sr 2 CaCu 2 O 6] layers is quite regular, with only some defects corresponding to c≈24 Å. The lamellar character of the oxide results in splitting and bending of the crystals.

Atomic structure of YB56 studied by digital high-resolution electron microscopy and electron diffraction

2001 ◽  
Vol 16 (1) ◽  
pp. 101-107 ◽  
Author(s):  
Takeo Oku ◽  
Jan-Olov Bovin ◽  
Iwami Higashi ◽  
Takaho Tanaka ◽  
Yoshio Ishizawa
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
High Resolution Electron Microscopy ◽  
Charge Coupled Device ◽  
X Ray ◽  
Resolution Electron ◽  
High Resolution Images ◽  
Diffraction Patterns ◽  
Simulated Images

Atomic positions for Y atoms were determined by using high-resolution electron microscopy and electron diffraction. A slow-scan charge-coupled device camera which had high linearity and electron sensitivity was used to record high-resolution images and electron diffraction patterns digitally. Crystallographic image processing was applied for image analysis, which provided more accurate, averaged Y atom positions. In addition, atomic disordering positions in YB56 were detected from the differential images between observed and simulated images based on x-ray data, which were B24 clusters around the Y-holes. The present work indicates that the structure analysis combined with digital high-resolution electron microscopy, electron diffraction, and differential images is useful for the evaluation of atomic positions and disordering in the boron-based crystals.

Characterization of Pd/V Multilayer Structures by High-Angle Annular Dark-Field Microscopy and High Resolution Tem

1991 ◽  
Vol 238 ◽  
Author(s):  
J. Liu ◽  
Y. Cheng ◽  
G. D. Lewen ◽  
M. B. Stearns
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Compositional Variation ◽  
High Angle ◽  
Dark Field Microscopy ◽  
Annular Dark Field ◽  
Chemical Modulation ◽  
Substrate Temperatures

ABSTRACTThe structures of e-beam evaporated Pd/V multilayer thin films, which were fabricated at different substrate temperatures, have been characterized by high-angle annular dark-field microscopy and high resolution electron microscopy techniques. X-ray scattering and crosssectional electron microscopy showed that both the Pd and V layers are composed of small textured crystallites with dominant orientations of Pd (111) and V (110). It is found that Pd/V multilayers with high chemical modulation can be fabricated at substrate temperatures around 350 K and at a deposition rate of 0.2 nm/s. Here high-angle annular dark-field microscopy has been shown to provide direct information about the compositional variation of the interlayers of these ML.

Direct observation of ordering in (GaIn) P

1988 ◽  
Vol 3 (3) ◽  
pp. 406-409 ◽  
Author(s):  
S. McKernan ◽  
B. C. De Cooman ◽  
C. B. Carter ◽  
D. P. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Microscope ◽  
Direct Observation ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Dark Field ◽  
Growth Surface ◽  
Organometallic Vapor Phase Epitaxy ◽  
Planar Defects ◽  
Group Iii ◽  
Gaas Substrates

Gax In1 − x Pepilayers grown under a range of growth conditions by organometallic vapor phase epitaxy (OMVPE) on GaAs substrates have been studied in the electron microscope. The results show the presence of an ordering of the group III sublattice parallel to some of the {111} planes. Dark-field images directly reveal ordered domains of different orientations that appear not to be perfect, but contain many planar defects parallel to the growth surface.

Quantifying The Effects Of Amorphous Layers on Image Contrast Using Energy Filtered Transmission Electron Microscopy

1994 ◽  
Vol 354 ◽  
Author(s):  
C. B. Boothroyd ◽  
R. E. Dunin-borkowski ◽  
W. M. Stobbs ◽  
C. J. Humphreys
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Inelastic Scattering ◽  
Carbon Film ◽  
Absolute Intensity ◽  
Atomic Level ◽  
Intensity Scale ◽  
Transmission Electron ◽  
High Resolution Images

AbstractHigh resolution images of a block oxide, (Nb205)çi(W03)8, with and without a superposed carbon film are compared both energy filtered and including the inelastic scattering. The differences between the images are quantified on an absolute intensity scale and possible origins of the differences in atomic level contrast are assessed using multislice simulations.

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