On the Origin of EL2 Intracenter Absorption Band in GaAs
Keyword(s):
ABSTRACTAn alternative interpretation of optical absorption spectra due to intracenter transition within EL2 defect in GaAs is provided. The arguments are presented that states originating from the L-valley of the conduction band can account for the presence of the wide absorption band, the no-phonon line and the observed uniaxial stress splittings. Using the analogy to the DX center, this model presents an explanation for the existence of the metastable state of EL2.
1974 ◽
Vol 37
(5)
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pp. 1367-1374
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2004 ◽
Vol 60
(3)
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pp. 535-539
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Keyword(s):
2014 ◽
Vol 548-549
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pp. 124-128
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