Enhancements in Two Dimensional Electron Gas Density and Mobility in δ-Doped AiGaAs Heterostructures
Keyword(s):
ABSTRACTWe report our recent investigations of a new structure formed by b-doping the barrier of an AlGaAs/GaAs heterostructure. In this new structure we have observed both a mobility of 1.9×lO6cm2/Vsec and the fractional quantum hall effect. We compare low temperature mobilities and densities achieved with the δ-doped heterostructure with corresponding high values reported in the literature for the homogeneously- doped heterostructure. We show that systematic enhancements in both density and mobility occur in the b-doped heterostructure. By δ-doping both barriers of a quantum well we have also achieved electron concentrations of 4×1012cm -2 in the well.
1994 ◽
Vol 70
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pp. 429-442
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1992 ◽
Vol 69
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pp. 2114-2117
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2020 ◽
Vol 11
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pp. 17-35
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2001 ◽
Vol 301
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pp. 212-220
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