Nickel Silicide Structures on Single-Crystal Silicon Membranes

1987 ◽  
Vol 102 ◽  
Author(s):  
P. Hren ◽  
A. Fernandez ◽  
J. Silcox
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Stress Relief ◽  
Nickel Silicide ◽  
Lateral Growth ◽  
Crystal Silicon ◽  
Strain Relief ◽  
Interfacial Dislocations ◽  
Silicon Membranes ◽  
Nickel Silicon

ABSTRACTNickel structures have been deposited on large (300 μm diameter), thin (1400 to 3000Å) single crystal (111) silicon membranes. On annealing, the nickel-silicon reaction generates strain which can be partially accommodated through buckling of the membrane, a mode of strain relief not available on bulk wafers. Examples of such buckling are presented in this paper. Features of the silicide structures observed include thin epitaxial Ni2 Si that grows on clean surfaces during deposition, vertical and lateral growth of NiSi2 into the membrane from nickel dots, and the absence of interfacial dislocations between NiSi2 and silicon, probably due to the stress relief.

Single Crystal Silicon Membranes

1987 ◽  
Vol 115 ◽  
Author(s):  
Andres Fernandez ◽  
P. Hren ◽  
K. C. Lee ◽  
J. Silcox
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Subsequent Annealing ◽  
Crystal Silicon ◽  
Anodic Etching ◽  
Silicon Membranes

ABSTRACTSelf-supporting, thin single crystal membranes can be fabricated from silicon wafers using ion implantation, anodic etching and subsequent annealing. Typically, membranes approximately 1200Å thick and about 250μm in diameter are formed in wafers 4 mil thick. Discs surrounding the membranes can be cut out to provide suitable TEM samples. In this paper, the steps for preparing such samples are presented with as much attention paid to experimental details as possible.

Thin Transparent Single-Crystal Silicon Membranes Made Using a Silicon-on-Nitride Wafer

2008 ◽  
Vol 53 (2) ◽  
pp. 579-583 ◽  
Author(s):  
Su Hwan Lee ◽  
Dal Ho Kim ◽  
Hee-Doo Yang ◽  
Sung-Jun Kim ◽  
Dong-Won Shin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Membranes

Fabrication of large-area ultra-thin single crystal silicon membranes

2011 ◽  
Vol 99 (22) ◽  
pp. 223105 ◽  
Author(s):  
Z. Y. Dang ◽  
M. Motapothula ◽  
Y. S. Ow ◽  
T. Venkatesan ◽  
M. B. H. Breese ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Large Area ◽  
Crystal Silicon ◽  
Silicon Membranes

Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon Germanium

2000 ◽  
Vol 609 ◽  
Author(s):  
Brian J. Greene ◽  
Joseph Valentino ◽  
Judy L. Hoyt ◽  
James F. Gibbons
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
Selective Etching ◽  
Lateral Growth ◽  
Crystal Silicon ◽  
Etch Stop ◽  
Etch Stop Layer

ABSTRACTThe fabrication of 250 Å thick, undoped, single crystal silicon on insulator by lateral solid phase epitaxial growth from amorphous silicon on oxide patterned (001) silicon substrates is reported. Amorphous silicon was grown by low pressure chemical vapor deposition at 525°C using disilane. Annealing at temperatures between 540 and 570°C is used to accomplish the lateral epitaxial growth. The process makes use of a Si/Si1-xGex/Si stacked structure and selective etching. The thin Si1-xGex etch stop layer (x=0.2) is deposited in the amorphous phase and crystallized simultaneously with the Si layers. The lateral growth distance of the epitaxial region was 2.5 μm from the substrate seed window. This represents a final lateral to vertical aspect ratio of 100:1 for the single crystal silicon over oxide regions after selective etching of the top sacrificial Si layer. The effects of Ge incorporation on the lateral epitaxial growth process are also discussed. The lateral epitaxial growth rate of 20% Ge alloys is enhanced by roughly a factor of three compared to the rate of Si films at an anneal temperature of 555°C. Increased random nucleation rates associated with Ge alloy films are shown to be an important consideration when employing Si1-xGex to enhance lateral growth or as an etch stop layer.

scholarly journals Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranes

2017 ◽  
Vol 110 (26) ◽  
pp. 262101 ◽  
Author(s):  
Aapo Varpula ◽  
Andrey V. Timofeev ◽  
Andrey Shchepetov ◽  
Kestutis Grigoras ◽  
Juha Hassel ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Thermal Detectors ◽  
Heavily Doped ◽  
Silicon Membranes

Single-Crystal Silicon Membranes with High Lithium Conductivity and Application in Lithium-Air Batteries

2011 ◽  
Vol 23 (42) ◽  
pp. 4947-4952 ◽  
Author(s):  
Tu T. Truong ◽  
Yan Qin ◽  
Yang Ren ◽  
Zonghai Chen ◽  
Maria K. Chan ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Lithium Conductivity ◽  
Silicon Membranes ◽  
Lithium Air Batteries

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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