Epitaxial Films of Germanium by MOCVD

1987 ◽  
Vol 102 ◽  
Author(s):  
Altaf H. Khan ◽  
Jorge J. Santiago
Keyword(s):  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Interface Strain ◽  
Bare Substrate ◽  
Organic Chemical Vapor Deposition

ABSTRACTA simple and easily expandable atmospheric pressure MOCVD (metal organic chemical vapor deposition) reactor for the growth of germanium films is proposed and implemented. It employs a resistively heated horizontal quartz reaction chamber. The organometallic compound tetramethylgermanium (TMGe) is used as the germanium source, and hydrogen as the carrier gas. Using this reactor, epitaxial films of germanium on <111> germanium substrates were grown at 550-650°C. The growth rate was found to increase with temperature. The single crystallinity of these films was evaluated by x-ray rocking curves, and the interface strain between the film and substrate was found to be less than 1%. These Ge/Ge samples have the same morphology as the bare substrate and their sheet resistance is 30% higher than the bare substrate value.

ZnxCd1−xTe Epitaxial Growth by Remote Plasma Enhanced MOCVD Method

1997 ◽  
Vol 487 ◽  
Author(s):  
Daiji Noda ◽  
Torn Aoki ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka
Keyword(s):  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
Remote Plasma ◽  
X Ray ◽  
Composition Ratio ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractFor epitaxial growth of compound Zn1−xCd1−XTe by metal organic chemical vapor deposition (MOCVD), it is difficult to obtain a high composition ratio x. In this study, we have adopted a remote plasma enhanced (RPE) MOCVD method for the epitaxial growth. Cd1−xZnxTe with the composition ratio x in the range of 0 to 1 has been obtained while varying the ratio of dimethylcadmium (DMCd) to diethylzinc (DEZn) from 0 to 20%. The crystallinity of the epitaxial films was about 400 to 700 arcsec FWHM defined by X ray diffiraction measurements.

scholarly journals Atmospheric pressure metal organic chemical vapor deposition of thin germanium films

2021 ◽  
Vol 56 (15) ◽  
pp. 9274-9286
Author(s):  
Ronny Fritzsche ◽  
Dietrich R. Zahn ◽  
Michael Mehring
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Germanium Films ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

AbstractThe deposition of thin germanium films by atmospheric pressure metal organic chemical vapor deposition at temperatures below 400 °C on substrates such as silicon wafers, float glass, and polyimide (Kapton®) using the diorganogermanes GeH2Cp4M2 and GeH2Cp*2 as molecular precursors is described. The deposition rates and thus the layer thicknesses can be varied by temperature and time to give layers with a thickness in the nanometer range. The homogeneity and roughness of the deposited films were analyzed by means of atomic force microscopy measurements showing the formation of smooth and uniform surfaces with roughnesses of the films in the range of (1 ± 0.15) nm to (4.5 ± 1.5) nm. Films with thicknesses between 50 and 750 nm were deposited and analyzed by Raman spectroscopy, vis–NIR spectroscopy, electron microscopy, energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). The as-deposited films are composed of amorphous germanium containing approximately 10% of carbon. Using Kapton® as a substrate highly flexible films were obtained.

Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template

RSC Advances ◽  
2016 ◽  
Vol 6 (88) ◽  
pp. 84794-84800 ◽  
Author(s):  
Yunhao Lin ◽  
Meijuan Yang ◽  
Wenliang Wang ◽  
Zhiting Lin ◽  
Guoqiang Li
Keyword(s):  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
3 Dimensional ◽  
In Situ Deposition ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

High-quality crack-free GaN epitaxial films were successfully grown on Si(111) substrates using metal–organic chemical vapor deposition by in situ depositing SiN on a 3-dimensional (3D) GaN template.

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