Characterization of Mn-Doped in 1−x GaxAsyP1−y Grown By Lpee

1987 ◽  
Vol 102 ◽  
Author(s):  
Shanthi N. Iyer ◽  
Ali Abul-Fadl ◽  
Ward J. Collis ◽  
Mohammad N. Khorrami
Keyword(s):  
Thermal Activation ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Thermal Activation Energy ◽  
Photoluminescence Spectra ◽  
Inp Substrate ◽  
Donor And Acceptor ◽  
Lattice Matched ◽  
Mn Doped

ABSTRACTMn-doped In1−x GaxAsyP1−y epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxial (LPEE) technique. The variation of growth velocity of the epilayers with current density and the doping characteristics of Mn in the epilayer has been studied. The temperature dependence of the hole concentration and the mobility has been analysed to determine the donor and acceptor densities, thermal activation energy of the level associated with Mn and the dominant scattering mechanisms that limit the hole mobility. The photoluminescence spectra of the doped epilayers are examined at 10K as a function of the excitation level.

scholarly journals Electrical and Photoelectrical Characterization of Deep Defects In Cubic GaN on GaAs

1999 ◽  
Vol 4 (S1) ◽  
pp. 185-190
Author(s):  
M. Lisker ◽  
A. Krtschil ◽  
H. Witte ◽  
J. Christen ◽  
D.J. AS ◽  
...  
Keyword(s):  
Activation Energy ◽  
Gaas Substrate ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Thermal Activation Energy ◽  
Rf Plasma ◽  
Admittance Spectroscopy ◽  
Gaas Substrates ◽  
Cubic Gan

Nominally undoped cubic GaN epilayers deposited by rf-plasma assisted molecular beam epitaxy on semi-insulating GaAs substrates were investigated by electric and photoelectric spectroscopical methods. As a consequence of the existence of deep levels in the GaAs-substrate itself, special care has to be taken to separate the contributions of the substrate from that of the cubic GaN epilayer in the various spectra. Two different contact configurations (coplanar and sandwich structures) were successfully used to perform this separation. In the cubic GaN epilayer a trap with a thermal activation energy of (85±20)meV was found by thermal admittance spectroscopy and thermal stimulated currents. Optical admittance spectroscopy and photocurrent measurements furthermore revealed defects at EG-(0.04-0.13) eV, EG-(0.21-0.82) eV and two additional deeper defects at 1.91 Ev and 2.1 eV, respectively. These defect related transitions are very similar to those observed in hexagonal GaN.

Characterization of Deep Levels in 3C-SiC by Optical-Capacitance-Transient Spectroscopy

2002 ◽  
Vol 719 ◽  
Author(s):  
Y. Nakakura ◽  
M. Kato ◽  
M. Ichimura ◽  
E. Arai ◽  
Y. Tokuda
Keyword(s):  
Cross Section ◽  
Thermal Activation ◽  
Deep Level ◽  
Threshold Energy ◽  
Thermal Activation Energy ◽  
Deep Levels ◽  
Optical Cross Section ◽  
Transient Spectroscopy ◽  
Capacitance Transient

AbstractAn optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize the defects in 3C-SiC on Si. The O-CTS measurement enables us to estimate optical threshold energy and optical cross section for the defects. In the O-CTS spectrum, a peak was observed for photon energy hv larger than 0.5 eV. This peak was thought to be due to the ND1 center, which was also observed by deep level transient spectroscopy (DLTS) and found to have a thermal activation energy of 0.37 eV. The optical cross section for the center increased with hv for hv<0.6 eV and then decreased with increasing hv. The apparent optical threshold energy was about 0.47 eV. Another deep levels which have optical threshold energy of around 1.4 eV were also observed.

Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Lisker ◽  
A. Krtschil ◽  
H. Witte ◽  
J. Christen ◽  
D.J. As ◽  
...  
Keyword(s):  
Activation Energy ◽  
Gaas Substrate ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Thermal Activation Energy ◽  
Rf Plasma ◽  
Admittance Spectroscopy ◽  
Gaas Substrates ◽  
Cubic Gan

AbstractNominally undoped cubic GaN epilayers deposited by rf-plasma assisted molecular beam epitaxy on semi-insulating GaAs substrates were investigated by electric and photoelectric spectroscopical methods. As a consequence of the existence of deep levels in the GaAs-substrate itself, special care has to be taken to separate the contributions of the substrate from that of the cubic GaN epilayer in the various spectra. Two different contact configurations (coplanar and sandwich structures) were successfully used to perform this separation. In the cubic GaN epilayer a trap with a thermal activation energy of (85±20)meV was found by thermal admittance spectroscopy and thermal stimulated currents. Optical admittance spectroscopy and photocurrent measurements furthermore revealed defects at EG -(0.04-0.13) eV, EG-(0.21-0.82) eV and two additional deeper defects at 1.91 Ev and 2.1 eV, respectively. These defect related transitions are very similar to those observed in hexagonal GaN.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals Characterization of Charge States in Conducting Organic Nanoparticles by X-ray Photoemission Spectroscopy

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 2058
Author(s):  
Jordi Fraxedas ◽  
Antje Vollmer ◽  
Norbert Koch ◽  
Dominique de Caro ◽  
Kane Jacob ◽  
...  
Keyword(s):  
Partial Oxidation ◽  
Chemical Shifts ◽  
Large Family ◽  
Photoemission Spectroscopy ◽  
Intrinsic Structure ◽  
X Ray ◽  
Level Lines ◽  
Donor And Acceptor ◽  
Electronic Configurations

The metallic and semiconducting character of a large family of organic materials based on the electron donor molecule tetrathiafulvalene (TTF) is rooted in the partial oxidation (charge transfer or mixed valency) of TTF derivatives leading to partially filled molecular orbital-based electronic bands. The intrinsic structure of such complexes, with segregated donor and acceptor molecular chains or planes, leads to anisotropic electronic properties (quasi one-dimensional or two-dimensional) and morphology (needle-like or platelet-like crystals). Recently, such materials have been synthesized as nanoparticles by intentionally frustrating the intrinsic anisotropic growth. X-ray photoemission spectroscopy (XPS) has emerged as a valuable technique to characterize the transfer of charge due to its ability to discriminate the different chemical environments or electronic configurations manifested by chemical shifts of core level lines in high-resolution spectra. Since the photoemission process is inherently fast (well below the femtosecond time scale), dynamic processes can be efficiently explored. We determine here the fingerprint of partial oxidation on the photoemission lines of nanoparticles of selected TTF-based conductors.

Luminescence characterization of Mn-doped LiMgPO4 synthesized using different precursors

2021 ◽  
Vol 297 ◽  
pp. 122083
Author(s):  
Chuchai Sronsri ◽  
Wanpasuk Sittipol ◽  
Kongpop U-yen
Keyword(s):  
Mn Doped

Preparation and characterization of Mn doped sprayed p-CuInS2 films

1992 ◽  
Vol 82 (12) ◽  
pp. 997-1000 ◽  
Author(s):  
R.P.Vijaya Lakshmi ◽  
R. Venugopal ◽  
D.Raja Reddy ◽  
B.K. Reddy
Keyword(s):  
Mn Doped
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