Metal Organic Chemical Vapour Deposition Growth of Epitaxial ZnSe/ZnS Multiple Layered Structures

1987 ◽  
Vol 102 ◽  
Author(s):  
Heather M Yates ◽  
John O Williams
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapour Deposition ◽  
Mass Spectroscopy ◽  
Hydrogen Sulphide ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Secondary Ion

ABSTRACTZnSe-ZnS multilayers have been prepared by atmospheric. pressure metal organic chemical vapour deposition (M0CVD) using dimethylzinc, hydrogen sulphide and hydrogen selenide. Layer thicknesses down to 500Å have been obtained and the interfaces, as measured by secondary ion mass spectroscopy (SIMS) and electron microscopy, are regular. A notable improvement in interface abruptness was observed with better control of experimental procedures and more especially with the growth of a ZnSe buffer layer between the GaAs(100) substrate and multilayers.

Structural and morphological characterization of the Cd-rich region in Cd1-xZnxO thin films grown by atmospheric pressure metal organic chemical vapour deposition

2019 ◽  
Vol 683 ◽  
pp. 128-134 ◽  
Author(s):  
Adelaida Huerta-Barberà ◽  
Esther de Prado ◽  
Maria del Carmen Martínez-Tomás ◽  
Saïd Agouram ◽  
Elias Muñoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Morphological Characterization ◽  
Organic Chemical ◽  
Rich Region ◽  
Metal Organic

Inline atmospheric pressure metal-organic chemical vapour deposition for thin film CdTe solar cells

2014 ◽  
Vol 558 ◽  
pp. 374-377 ◽  
Author(s):  
G. Kartopu ◽  
V. Barrioz ◽  
S.J.C. Irvine ◽  
A.J. Clayton ◽  
S. Monir ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapour Deposition ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Cdte Solar Cells ◽  
Metal Organic

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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