ZNSE/III–V Heterostructures Grown in a Multichamber MBE System

1987 ◽  
Vol 102 ◽  
Author(s):  
M. C. Tamargo ◽  
J. L. de Miguel ◽  
D. M. Hwang ◽  
B. J. Skromme ◽  
M. H. Meynadier ◽  
...  
Keyword(s):  
Growth Model ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Layer By Layer ◽  
Bulk Gaas ◽  
Group Iii ◽  
3 Dimensional ◽  
Gaas Substrates

ABSTRACTWe have grown ZnSe epitaxial layers on bulk GaAs substrates and on GaAs epitaxial layers, with both As-rich and Ga-rich surface terminations. We have also grown ZnSe on AlAs epitaxial surfaces with different As to Al ratios. In all cases, abrupt, layer-by-layer growth is observed on the As-rich surfaces, while 3-dimensional nucleation is observed on the group III-rich surfaces. GaAs was also grown on ZnSe layers. In this case, microtwins form at the interface whose density diminishes as the layer is made thicker. A growth model is proposed consistent with these results which requires over-all electronic balance at the interface.

Layer-by-Layer Growth of GaN on GaAs Substrates by Alternate Supply of $\bf GaCl_{3}$ and $\bf NH_{3}$

1996 ◽  
Vol 35 (Part 2, No. 6B) ◽  
pp. L748-L750 ◽  
Author(s):  
Harutoshi Tsuchiya ◽  
Manabu Akamatsu ◽  
Masahiko Ishida ◽  
Fumio Hasegawa
Keyword(s):  
Layer Growth ◽  
Layer By Layer ◽  
Gaas Substrates

Molecular Dynamics Studies of Semiconductor Thin Films and Interfaces

1987 ◽  
Vol 94 ◽  
Author(s):  
Marcia H. Grabow ◽  
George H. Gilmer
Keyword(s):  
Molecular Dynamics ◽  
Energy State ◽  
Layer Growth ◽  
Metastable Equilibrium ◽  
Free Energy Barrier ◽  
Misfit Dislocations ◽  
Layer By Layer ◽  
3 Dimensional ◽  
Smooth Film ◽  
The Stability

ABSTRACTThe structure and stability of thin epitaxial films have been investigated using molecular dynamics computer simulations. One issue of interest is the stability of a smooth film relative to 3-dimensional clusters. The simulation results show that the uniform film is never the lowest energy state for a system with finite misfit. However, the uniform film, produced in a layer-by-layer growth mode, can persist in a metastable state at substantial misfits, e.g. 10% at 1/2 the melting point. This is a result of the large nucleation barrier to the formation of clusters.The second issue is the quality of the interface between the film and the substrate. At equilibrium, the critical thickness for the introduction of misfit dislocations is larger for films on the diamond cubic (100) substrate than on the (111), and differs from predictions based on continuum mechanics. We find that coherent films remain in metastable equilibrium far beyond the critical misfit calculated for full equilibrium, because a large free energy barrier inhibits the introduction of misfit dislocations.

Layer by Layer Growth of GaN Films by Low Temperature Cyclic Process

2001 ◽  
Vol 693 ◽  
Author(s):  
P. Sanguino ◽  
S. Koynov ◽  
M. Niehusl ◽  
L. V. Melo ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Nitrogen Plasma ◽  
Layer Growth ◽  
Cyclic Process ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Group Iii ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposited Films

AbstractRecently we have proposed a new layer-by-layer method for deposition of group-III nitrides from elemental precursors (Ga, N2). This technique is based on a two-step cyclic process, which alternates Pulsed Laser Deposition (PLD) and nitrogen plasma treatment. We have shown that such a process allows to control independently the structure and the N-content of the growing film. The objective of this work is to develop the cyclic process for achieving high quality GaN films. We explore the opportunities to grow stoichiometric epitaxial films on different substrates at relatively low temperatures (400°C to 600°C). This will gives us the possibility to use ZnO epitaxial layers as a buffer without thermal degradation. UV- Visible transmission spectra, X-ray diffraction scans and Atomic Force Microscopy are some of the tools used to characterise and compare the deposited films.

Inverse problem in the layer-by-layer growth model

2014 ◽  
Vol 59 (6) ◽  
pp. 855-861 ◽  
Author(s):  
A. V. Shutov ◽  
A. V. Maleev
Keyword(s):  
Inverse Problem ◽  
Growth Model ◽  
Layer Growth ◽  
Layer By Layer

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

scholarly journals Modeling the Layer-by-Layer Growth of HKUST-1 Metal-Organic Framework Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1631
Author(s):  
Qiang Zhang ◽  
Yohanes Pramudya ◽  
Wolfgang Wenzel ◽  
Christof Wöll
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Layer Growth ◽  
Coarse Grained ◽  
Structural Defects ◽  
Effect Of Temperature ◽  
Layer By Layer ◽  
Reactant Concentration ◽  
Metal Organic

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain boundaries. In the case of MOF thin films, surface roughness can also have a pronounced influence on MOF-based device properties. Presently, there is little systematic knowledge about optimal growth conditions with regard to optimal morphologies for specific applications. In this work, we simulate the layer-by-layer (LbL) growth of the HKUST-1 MOF as a function of temperature and reactant concentration using a coarse-grained model that permits detailed insights into the growth mechanism. This model helps to understand the morphological features of HKUST-1 grown under different conditions and can be used to predict and optimize the temperature for the purpose of controlling the crystal quality and yield. It was found that reactant concentration affects the mass deposition rate, while its effect on the crystallinity of the generated HKUST-1 film is less pronounced. In addition, the effect of temperature on the surface roughness of the film can be divided into three regimes. Temperatures in the range from 10 to 129 °C allow better control of surface roughness and film thickness, while film growth in the range of 129 to 182 °C is characterized by a lower mass deposition rate per cycle and rougher surfaces. Finally, for T larger than 182 °C, the film grows slower, but in a smooth fashion. Furthermore, the potential effect of temperature on the crystallinity of LbL-grown HKUST-1 was quantified. To obtain high crystallinity, the operating temperature should preferably not exceed 57 °C, with an optimum around 28 °C, which agrees with experimental observations.

Direct Layer-by-Layer Growth of Crystalline Ag-TCNQ Thin Films on Functionalized Au Substrate: How Critical Is the pH of Ag(I) Solution?

2020 ◽  
Vol 11 (24) ◽  
pp. 10548-10551
Author(s):  
Aswani Sathish Lathika ◽  
Shammi Rana ◽  
Anupam Prasoon ◽  
Pooja Sindhu ◽  
Debashree Roy ◽  
...  
Keyword(s):  
Thin Films ◽  
Layer Growth ◽  
Layer By Layer

High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H-SiC(0001) Substrate

2003 ◽  
Vol 42 (Part 2, No. 5A) ◽  
pp. L445-L447 ◽  
Author(s):  
Norio Onojima ◽  
Jun Suda ◽  
Hiroyuki Matsunami
Keyword(s):  
Layer Growth ◽  
Layer By Layer ◽  
High Quality ◽  
Initial Layer
Sign in / Sign up

Export Citation Format

Share Document