Low Resistivity Contact Formation for Lsi Interconnection With Short-Pulse-Laser Induced Mo Cvd
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ABSTRACTThe contact characteristics between Al interconnections in LSI's and direct written Mo lines has been substantially improved by adopting, for the first time, short-pulse-laser induced Mo CVD. The linewidth stability upon Al interconnections has also been improved. Transient, localized heating with short laser pulses effectively overcomes the heat dissipation through Al interconnections which degraded contact characteristics and prevented fine drawing near the Al interconnection. This new scheme can appreciably widen the applicable device field of direct writing circuit restructuring.
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2007 ◽
Vol 348-349
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pp. 269-272
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2008 ◽
Vol 3
(1)
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pp. 30-40
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2004 ◽
Vol 42
(8-9)
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pp. 793-807
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