Laser Direct Writing of Aluminum

1987 ◽  
Vol 101 ◽  
Author(s):  
T. Cacouris ◽  
G. Scelsi ◽  
R. Scarmozzino ◽  
R.M. Osgood ◽  
R.R. Krchnavek
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Direct Writing ◽  
Uv Laser ◽  
Laser Direct Writing ◽  
Electrical Measurements ◽  
Deep Uv ◽  
Aluminum Interconnects ◽  
First Time ◽  
Deposited Films

ABSTRACTWe report, for the first time, laser direct writing of high conductivity aluminum interconnects from dimethylaluminum hydride (DMALH). These lines were deposited from a metallorganic gas with a focused deep-UV laser beam and were directly connected to aluminum test structures. Electrical measurements and Auger electron spectroscopy were used to characterize the laser deposited films.

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

Fiber nanogratings induced by femtosecond pulse laser direct writing for in-line polarizer

Nanoscale ◽  
2019 ◽  
Vol 11 (3) ◽  
pp. 908-914 ◽  
Author(s):  
Jiafeng Lu ◽  
Ye Dai ◽  
Qin Li ◽  
Yali Zhang ◽  
Chunhua Wang ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Femtosecond Pulse ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Femtosecond Pulse Laser ◽  
Self Organized ◽  
Silica Fibers ◽  
First Time

Self-organized fiber nanogratings (FNGs) induced by femtosecond pulse laser direct writing are demonstrated in optical silica fibers for the first time.

Hybrid UV laser direct writing of UV-curable PDMS thin film using aerosol jet printing

2019 ◽  
Vol 125 (2) ◽  
Author(s):  
Arndt Hohnholz ◽  
Kotaro Obata ◽  
Yasutaka Nakajima ◽  
Jürgen Koch ◽  
Mitsuhiro Terakawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Direct Writing ◽  
Uv Laser ◽  
Laser Direct Writing ◽  
Uv Curable ◽  
Jet Printing ◽  
Aerosol Jet Printing

Pulsed Laser Deposition of Thin Silicon Nitride Films

1992 ◽  
Vol 285 ◽  
Author(s):  
Xiangqun Xu ◽  
Kanekazu Seki ◽  
Naiqun Chen ◽  
Hideo Okabe ◽  
Joan M. Frye ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Absorption Characteristic ◽  
Silicon Nitride Films ◽  
Ft Ir ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTABSTRACTPulsed laser deposition of compressed Si3N4 powder has been used to grow thin SiNx films on a variety of substrates at substrate temperatures ranging from room temperature to 350°C. Film composition was analyzed by Auger electron spectroscopy. The SiN0.33 films have a band gap of 5.60 eV as measured by UV absorption. The FT-IR spectrum shows an absorption characteristic of Si-N. The Si/N ratio in the deposited films corresponding to various substrate temperatures has also been determined.

Contamination Effects in Mo/Ni Superlattices

1991 ◽  
Vol 229 ◽  
Author(s):  
Steven M. Hues ◽  
John L. Makous
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Bilayer Thickness ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Impurity Incorporation ◽  
X Ray ◽  
Beam Sputtering ◽  
Deposited Films

AbstractA softening of the shear elastic constant c44 has been observed previously in Mo/Ni superlattices as a function of decreasing bilayer thickness below approximately 100 Å.[1] We have prepared a series of Mo/Ni superlattice films by ion beam sputtering doped with varying concentrations of either aluminum or oxygen. The chemical and structural properties of these films were then determined using x-ray diffraction (XRD) and Auger electron spectroscopy (AES). The shear elastic properties were characterized by measuring the surface acoustic wave (SAW) velocity of the deposited films. We demonstrate structural and elastic property effects resulting from Al and O impurity incorporation in Mo/Ni multilayers.

Characterization of AuGeNi ohmic contacts on n-GaAs using electrical measurements, Auger electron spectroscopy and X-ray diffractometry

Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 807-810 ◽  
Author(s):  
J.B.B Oliveira ◽  
C.A Olivieri ◽  
J.C Galzerani ◽  
A.A Pasa ◽  
L.P Cardoso ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ohmic Contacts ◽  
Electrical Measurements ◽  
X Ray

Hybrid 2D patterning using UV laser direct writing and aerosol jet printing of UV curable polydimethylsiloxane

2017 ◽  
Vol 111 (12) ◽  
pp. 121903 ◽  
Author(s):  
Kotaro Obata ◽  
Adam Schonewille ◽  
Shayna Slobin ◽  
Arndt Hohnholz ◽  
Claudia Unger ◽  
...  
Keyword(s):  
Direct Writing ◽  
Uv Laser ◽  
Laser Direct Writing ◽  
Uv Curable ◽  
Jet Printing ◽  
Aerosol Jet Printing

Multi-Chip-Module Interconnections by Laser Direct Writing

1990 ◽  
Vol 203 ◽  
Author(s):  
Heinrich G. Müller ◽  
Alvaro Paredes ◽  
Klaus Buschick ◽  
Herbert Reichl
Keyword(s):  
High Frequency ◽  
Substrate Surface ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Hole Formation ◽  
Electrical Measurements ◽  
Ceramic Substrates ◽  
Dc Line ◽  
Via Hole ◽  
Chemical Pretreatments

ABSTRACTA very flexible maskless technique for thin film hybrid formation has been developed. Lay outs are transferred directly from work stations to laser controls. Openings in ceramic substrates are achieved through laser cutting, and chips are embedded to give a common chip-to-substrate surface, flat to within 2 μm. Dielectric layers of polyimide are formed by spin on techniques and are then laser structured for via hole formation.Interconnections of the embedded chips are generated by laser direct writing of thin copper lines from copper formate, followed by chemical copper deposition. Chemical pretreatments of the aluminum contact pads allow for reasonable chip contacting with these methods. Electrical measurements on the dc line conductivity and the high frequency behaviour of these interconnections have also been performed.

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