Excimer Laser Induced Micron-Size Pattern Etching By Image Projection

1987 ◽  
Vol 101 ◽  
Author(s):  
James H. Brannon
Keyword(s):  
Carbon Tetrachloride ◽  
Excimer Laser ◽  
Projection System ◽  
Fine Line ◽  
Microscope Objective ◽  
Image Projection ◽  
Micron Size ◽  
Chemical Techniques ◽  
Line Features ◽  
Krf Excimer Laser

ABSTRACTPatterned fine-line features as small as 0.8 microns have been etched in polyimide, silicon, and copper by use of ablative and chemical techniques. KrF excimer laser pattern etching was accomplished by use of a Kohler-type projection system employing a Uv refracting microscope objective. Ablative etching of polyimide was accomplished in air, while silicon and copper were chemically etched using the vapor of chlorine or carbon tetrachloride.

Microfabrication Technologies for Advanced VLSI Devices

1986 ◽  
Vol 76 ◽  
Author(s):  
Y. Horiike ◽  
R. Yoshikawa ◽  
H. Okano ◽  
M. Nakase ◽  
H. Komano ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Ion Beam ◽  
Deposition Process ◽  
High Dose ◽  
Magnetron Discharge ◽  
Projection System ◽  
Sense Amplifier ◽  
Polymer Deposition ◽  
Krf Excimer Laser ◽  
New Applications

ABSTRACTRecent progress in microfabrication technologies for advanced VLSI devices, such as 16M and 64MDRAM, is presented. First, an EB delineator with a vector-scanned VSB on a moving stage has been developed for printing 0.25 μm patterns employing PMMA, high dose exposure, and 50 KeV EB. Optical lithography also has been extended toward lower submicron geometry. A Krf excimer laser reduction projection system, using a quartz/CaF2 lens, resolves successfully 0.35 μm patterns. Ga field ion beam technology has been developed with new applications in fuse-cutting of redundancy and in optimizing sense amplifier by cutting transistor gates in the SRAM device. For fine line etching technology, collimated reactive ions produced by 10−3 Torr magnetron discharge achieves deep Si trench etching and tapered Al etching by using a polymer deposition process in addition to the original thin sidewall film. Finally, a damage-free excimer laser etching process has been developed which can etch n+ poly-Si with resist mask and with pattern transfer using an optics down to 0.5 μm and 0.9 μm resolutions respectively.

Microfabrication Technologies for Advanced VLSI Devices

1986 ◽  
Vol 75 ◽  
Author(s):  
Y. Horiike ◽  
R. Yoshikawa ◽  
H. Okano ◽  
M. Nakase ◽  
H. Komano ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Ion Beam ◽  
Deposition Process ◽  
High Dose ◽  
Magnetron Discharge ◽  
Projection System ◽  
Sense Amplifier ◽  
Polymer Deposition ◽  
Krf Excimer Laser ◽  
New Applications

AbstractRecent progress in microfabrication technologies for advanced VLSI devices, such as 16M and 64MDRAM, is presented. First, an EB delineator with a vector-scanned VSB on a moving stage has been developed for printing 0.25 μm patterns employing PMMA, high dose exposure, and 50 KeV EB. Optical lithography also has been extended toward lower submicron geometry. A Krf excimer laser reduction projection system, using a quartz/CaF2 lens, resolves successfully 0.35 μm patterns. Ga field ion beam technology has been developed with new applications in fuse-cutting of redundancy and in optimizing sense amplifier by cutting transistor gates in the SRAM device. For fine line etching technology, collimated reactive ions produced by 10-3 Torr magnetron discharge achieves deep Si trench etching and tapered Al etching by using a polymer deposition process in addition to the original thin sidewall film. Finally, a damage-free excimer laser etching process has been developed which can etch n+ poly-Si with resist mask and with pattern transfer using an optics down to 0.5 μm and 0.9 μm resolutions respectively.

Pressure-Controlled Wavelength Stabilization of a KrF Excimer Laser with Narrowed Bandwidth

1989 ◽  
Vol 28 (Part 1, No. 11) ◽  
pp. 2354-2356
Author(s):  
Yasuhiro Shimada ◽  
Koichi Wani ◽  
Yoshiro Ogata
Keyword(s):  
Excimer Laser ◽  
Wavelength Stabilization ◽  
Krf Excimer Laser ◽  
Pressure Controlled

Preparation of boron carbide thin film by pulsed KrF excimer laser deposition process

2002 ◽  
Vol 407 (1-2) ◽  
pp. 126-131 ◽  
Author(s):  
Shin-ichi Aoqui ◽  
Hisatomo Miyata ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Film ◽  
Boron Carbide ◽  
Excimer Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Krf Excimer Laser

An Advanced KrF Excimer Laser Stepper For Production Of 16MDRAMs

1988 ◽  
Author(s):  
Hideo Nakagawa ◽  
Masaru Sasago ◽  
Masayuki Endo ◽  
Yushihiko Hirai ◽  
Kazufumi Ogawa ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Krf Excimer Laser

Single pulse vibrational Raman scattering by a broadband KrF excimer laser in a hydrogen–air flame

1990 ◽  
Vol 29 (15) ◽  
pp. 2325 ◽  
Author(s):  
Robert W. Pitz ◽  
Joseph A. Wehrmeyer ◽  
J. M. Bowling ◽  
Tsarng-Sheng Cheng
Keyword(s):  
Raman Scattering ◽  
Excimer Laser ◽  
Single Pulse ◽  
Krf Excimer Laser

Experimental study of excimer formation kinetics in a discharge-pumped KrF excimer laser

1994 ◽  
Vol 105 (1-2) ◽  
pp. 133-141 ◽  
Author(s):  
H. Yoshida ◽  
K. Nakamura ◽  
H. Ninomiya ◽  
S. Horiguchi
Keyword(s):  
Experimental Study ◽  
Excimer Laser ◽  
Formation Kinetics ◽  
Excimer Formation ◽  
Krf Excimer Laser
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