Picosecond Laser-Induced Solid-Liquid Phase Transformations in Gallium Arsenide and Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
B. Danielzik ◽  
P. Harten ◽  
K. Sokolowski-Tinten ◽  
D. von der Linde
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Phase Transformations ◽  
Picosecond Laser ◽  
Time Resolved ◽  
Velocity Increase ◽  
Melting Threshold ◽  
A New Technique ◽  
Solid Liquid ◽  
Laser Heated

ABSTRACTMelt-in velocities of picosecond laser-heated Si and GaAs were obtained from optical reflectivity measurements. We observed a velocity increase from about 100 m/s near the melting threshold to many hundred m/s at higher fIuences. With a new technique for picosecond time-resolved observation of atomic desorption we have been able to resolve the evaporation of Ga.

Measurement of Fast Melting and Regrowth Velocities in Picosecond Laser Heated Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
P. H. Bucksbaum ◽  
J. Bokor
Keyword(s):  
Picosecond Laser ◽  
Liquid Films ◽  
Heat Diffusion ◽  
Incident Laser ◽  
Time Resolved ◽  
Light Pulses ◽  
Incident Laser Intensity ◽  
Krf Excimer Laser ◽  
Laser Heated ◽  
Melting Experiment

ABSTRACTFast regrowth of amorphous silicon from liquid silicon films has been directly observed in a time resolved picosecond laser melting experiment. Liquid films up to 100 nm thick were formed on crystalline substrates with 15 picosecond 248 nm pulses from a KrF* excimer laser. The film thickness as a function of time was probed directly by observing attenuation of 1.64 pm 15 psec light pulses transmitted through the melt. Melting and regrowth velocities were compared to a heat diffusion model, and evidence for melt undercooling was observed. The resolidified silicon was amorphous at all values of incident laser intensity.

Two distinct transitions in ultrafast solid-liquid phase transformations of GaAs

1991 ◽  
Vol 53 (3) ◽  
pp. 227-234 ◽  
Author(s):  
K. Sokolowski-Tinten ◽  
H. Schulz ◽  
J. Bialkowski ◽  
D. Linde
Keyword(s):  
Liquid Phase ◽  
Phase Transformations ◽  
Solid Liquid

Time-Resolved Optical Studies of Picosecond Laser Interactions With Gaas Surfaces

1985 ◽  
Vol 51 ◽  
Author(s):  
J.M. Liu ◽  
A.M. Malvezzi ◽  
N. Bloembergen
Keyword(s):  
Picosecond Laser ◽  
Laser Pulses ◽  
Wavelength Dependence ◽  
Electron Hole ◽  
Molten Layer ◽  
Time Resolved ◽  
High Fluences ◽  
Electron Hole Plasma ◽  
Vapor Cloud ◽  
Melting Threshold

ABSTRACTThe interactions of picosecond laser pulses at 532 nm wavelength with GaAs surfaces have been studied with time-resolved reflectivity and transmission measurements at three probe wavelengths. At fluences below the melting threshold, the laser-generated electron-hole plasma is limited to a density below ≈1020cm−3. The high reflectivities of molten GaAs observed at fluences above the tlhreshold have a wavelength dependence inconsistent with a simple Drude model for a metallic GaAs molten layer. At high fluences, the evolution of a laser-induced vapor cloud is observed.

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