Ion Irradiation Induced Grain Growth in Metal Thin Films

1988 ◽  
Vol 100 ◽  
Author(s):  
Joyce. C. Liu ◽  
J. W. Mayer
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Growth ◽  
Material Properties ◽  
Low Dose ◽  
Ion Irradiation ◽  
High Dose ◽  
Atomic Mobility ◽  
Metal Thin Films ◽  
Dose Regime

ABSTRACTThe dependence of ion irradiation induced grain growth on collision and material properties were studied in metal and alloy thin films. The uniform grain size increased with ion dose in the low dose regime; and the growth saturated in the high dose regime. The saturated grain size was determined 'by the cascade dimension as well as the atomic mobility. The growth was further influenced by the temperature, composition and impurity.

Ion Induced Grain Growth in Pd

1991 ◽  
Vol 235 ◽  
Author(s):  
D. A. Lilienfeld ◽  
P. Bøorgesen ◽  
P. Meyer
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Growth ◽  
Low Temperatures ◽  
Nanocrystalline Materials ◽  
Ion Irradiation ◽  
Size Distributions ◽  
Careful Choice ◽  
Average Grain Size

ABSTRACTIon irradiation induced grain growth size distributions in Pd are examined at low temperatures. Two features are observed: 1) A majority of the grains saturate in size. 2) Some grains achieve sizes much larger than the average grain size and continue to grow with ion dose. However, by careful choice of ion mass and ion dose, it is possible to produce a sample possessing a monomodal grain size. This process will have applications in producing thin films of nanocrystalline materials.

The Effect of Thermal Spike on the Ion Irradiation Induced Grain Growth

1991 ◽  
Vol 235 ◽  
Author(s):  
K. H. Chae ◽  
J. H. Song ◽  
J. H. Joo ◽  
J. J. Woo ◽  
C. N. Whang ◽  
...  
Keyword(s):  
Grain Growth ◽  
Low Dose ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Heat Of Mixing ◽  
High Dose ◽  
Thermal Spike ◽  
Close Relationship ◽  
Basic Parameters ◽  
Good Agreement

ABSTRACTThe relation between the ion irradiation induced grain growth in bilayer system and the basic parameters involved in ion beam mixing process was studied. TEM micrographs showed that a significant grain growth has been induced by Ar+ irradiation at room temperature. The grain size increases rapidly in low dose region, while it approaches a saturated value in high dose region, and it has close relationship with thermodynamic properties such as cohesive energy ( ΔHc ) and heat of mixing( ΔHm ). The experimental results are in good agreement with the model for the grain growth based on the thermal spike induced atomic migration.

The Intercorrelation Between Microstructure and Chemicalmechanical Polish of Metal Thin Films

1999 ◽  
Vol 564 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Ying-Lang Wang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Removal Rate ◽  
Metal Films ◽  
The Other ◽  
Metal Thin Films ◽  
Other Hand ◽  
Underlying Mechanisms ◽  
Table Speed

AbstractThe correlation between microstructures of Al and W metal thin films and their respective CMP performance is investigated. It is found that CMP removal rate decreases with increasing grain size. In both cases, the textures of the metal films are altered and their resistivity increased after CMP. The phenomenon is more pronounced for polish under a greater down force. The table speed, on the other hand, has only minimum effects on microstructure and resistivity. The possible underlying mechanisms leading to this phenomenon are proposed and their potential impacts on metallization reliability is discussed.

Influence of low energy Ar ion irradiation to metal thin films

2004 ◽  
Vol 2004.1 (0) ◽  
pp. 389-390
Author(s):  
Tomonori SASAKI ◽  
Kinuko FUJIMOTO ◽  
Ming YANG
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Low Energy ◽  
Metal Thin Films

Preparation and Microstructure Evolution of Both Freestanding and Supported TiO2 Thin Films

2002 ◽  
Vol 17 (6) ◽  
pp. 1520-1528 ◽  
Author(s):  
Chen-Lung Fan ◽  
Daniel Ciardullo ◽  
Jay Paladino ◽  
Wayne Huebner
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Grain Size ◽  
Grain Growth ◽  
Anatase Phase ◽  
Rutile Phase ◽  
Tio2 Thin Films ◽  
Cover Glass ◽  
Citrate Complex ◽  
Phase Development

Thin films of TiO2 were fabricated by spin-coating silicon wafers and cover glass with a titanium citrate complex precursor. The grain growth and phase development of both freestanding and supported films were studied using a combination of atomic force microscopy, x-ray diffraction, and transmission electron microscopy. Freestanding films prepared at 400 °C possess only the anatase phase, while supported films treated under the same conditions formed a small amount of the rutile phase. After heat treatment at various temperatures, results indicated that porosity was introduced into the films when the grain size grew close to the film thickness. Grain growth studies show that the grain size of the freestanding film underwent a drastic increase during the transformation from anatase to rutile. The grain size of the supported films did not show an abrupt change upon heat treatment. The grain size of the freestanding films treated at 900 °C was approximately three times larger than that of the supported films.

The grain growth and phase transformation in Ni thin films induced by ion irradiation

Vacuum ◽  
1991 ◽  
Vol 42 (15) ◽  
pp. 995-999 ◽  
Author(s):  
Peixuan Wang ◽  
Yanfeng Fu ◽  
Guoguang Zhang ◽  
Ruzhang Ma
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Grain Growth ◽  
Ion Irradiation
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