Ion Beam Crystallography of Metal-Silicon Interfaces: Pd-Si(111)

1981 ◽  
Vol 10 ◽  
Author(s):  
R. Tromp ◽  
E. J. Van Loenen ◽  
M. Iwami ◽  
R. Smeenk ◽  
F. W. Saris
Keyword(s):  
Thermal Stability ◽  
Structural Analysis ◽  
Room Temperature ◽  
Ion Beam ◽  
Experimental Arrangement ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering ◽  
Palladium Silicide ◽  
Thermal Stability Of

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium siuicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd2Si layers.

Structural analysis of the Cu(100)-p(2×2)-Sn surface using low and medium energy ion scattering spectroscopies

2011 ◽  
Vol 83 (8) ◽  
Author(s):  
M. Walker ◽  
M. G. Brown ◽  
M. Draxler ◽  
M. G. Dowsett ◽  
C. F. McConville ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering

THE TEMPERATURE DEPENDENCE OF THE SURFACE RELAXATION OF Cu(111) AND Ag(111) — EVIDENCE FOR GIANT ANHARMONIC EFFECTS

1997 ◽  
Vol 04 (06) ◽  
pp. 1091-1094 ◽  
Author(s):  
K. H. CHAE ◽  
H. C. LU ◽  
P. STATIRIS ◽  
T. GUSTAFSSON
Keyword(s):  
Theoretical Analysis ◽  
Temperature Dependence ◽  
Lattice Constant ◽  
Room Temperature ◽  
Surface Relaxation ◽  
Medium Energy ◽  
Ion Scattering ◽  
Surface Vibration ◽  
Anharmonic Effects ◽  
Medium Energy Ion Scattering

We have used medium energy ion scattering with channeling and blocking to measure the spacing between the two outermost atomic layers on the (111) faces of Cu and Ag as a function of temperature. The Ag (111) surface undergoes a dramatic transformation from being slightly contracted at room temperature to being strongly expanded (+10% of the bulk spacing) around 900°C. Cu (111) shows similar but smaller effects. The change of the surface lattice constant is paralleled by large enhancements of the surface vibration amplitudes. We therefore conclude that our observations are due to large anharmonic effects at the surface. We further discuss our results in terms of a recent microscopic theoretical analysis.

Structural analysis of the Cu(100)–p(32×2)R45°–Sn surface using low and medium energy ion scattering spectroscopies

2011 ◽  
Vol 605 (23-24) ◽  
pp. 1934-1940 ◽  
Author(s):  
M. Walker ◽  
M.G. Brown ◽  
M. Draxler ◽  
M.G. Dowsett ◽  
C.F. McConville ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering

Au/Fe thin-film magnetic multilayer materials: A layer-specific structural analysis using medium-energy ion scattering

1998 ◽  
Vol 58 (8) ◽  
pp. 4934-4941 ◽  
Author(s):  
T. C. Q. Noakes ◽  
P. Bailey ◽  
P. K. Hucknall ◽  
K. Donovan ◽  
M. A. Howson
Keyword(s):  
Thin Film ◽  
Structural Analysis ◽  
Magnetic Multilayer ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering ◽  
Multilayer Materials

A medium energy ion scattering analysis of the SiSiO2 interface formed by ion beam oxidation of silicon

1997 ◽  
Vol 117-118 ◽  
pp. 207-211 ◽  
Author(s):  
Young Pil Kim ◽  
Si Kying Choi ◽  
Yong Ho Ha ◽  
Sehun Kim ◽  
Hyun Kyong Kim ◽  
...  
Keyword(s):  
Ion Beam ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering

Evidence for Island Growth on Deposition of Silver Onto Si(111)7 × 7 at Room Temperature

1982 ◽  
Vol 18 ◽  
Author(s):  
E. J. Van Loenen ◽  
M. Iwami ◽  
R. M. Tromp ◽  
J. F. Van Der Veen ◽  
F. W. Saris
Keyword(s):  
Growth Process ◽  
Room Temperature ◽  
Three Dimensional ◽  
Silicide Formation ◽  
Medium Energy ◽  
Ion Scattering ◽  
Island Growth ◽  
Medium Energy Ion Scattering ◽  
Silver Islands

The growth process of silver deposited onto the Si(111) 7 × 7 surface at room temperature was studied with medium energy ion scattering in combination with channelling. Coverages studied were in the range 0−8 × 1015 Ag atoms cm−2. The measurements show that silver forms three-dimensional islands. Although incorporation of small amounts of silicon in the silver islands (less than 8 × 10−4 Si atoms cm−2) cannot be excluded, no evidence was found for mixing between silver and silicon or for silicide formation.

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