Velocity and Orientation Dependence of Solute Trapping In Si

1980 ◽  
Vol 1 ◽  
Author(s):  
P. Baeri ◽  
G. Foti ◽  
J. M. Poate ◽  
S. U. Campisano ◽  
E. Rimini ◽  
...  

ABSTRACTThe segregation phenomena of In, Ga and Bi in Si have been investigated as a function of the liquid-solid interface velocity following laser irradiation. The crystallization velocity has been changed within the range 0.8–5 m/s by varying either the substrate temperature during irradiation or the laser pulse duration. The measured interfacial segregation coefficients depend critically on the velocity and on the crystal orientation of the solidifying plane.

1983 ◽  
Vol 44 (11) ◽  
pp. 1247-1255 ◽  
Author(s):  
A. L'Huillier ◽  
L.A. Lompre ◽  
G. Mainfray ◽  
C. Manus

2021 ◽  
Vol 138 ◽  
pp. 106916
Author(s):  
M. Curcio ◽  
A. De Bonis ◽  
A. Santagata ◽  
A. Galasso ◽  
R. Teghil

2002 ◽  
Vol 20 (2) ◽  
pp. 263-268 ◽  
Author(s):  
X. FLEURY ◽  
S. BOUQUET ◽  
C. STEHLÉ ◽  
M. KOENIG ◽  
D. BATANI ◽  
...  

In this article, we present a laboratory astrophysics experiment on radiative shocks and its interpretation using simple modelization. The experiment is performed with a 100-J laser (pulse duration of about 0.5 ns) which irradiates a 1-mm3 xenon gas-filled cell. Descriptions of both the experiment and the associated diagnostics are given. The apparition of a radiation precursor in the unshocked material is evidenced from interferometry diagrams. A model including self-similar solutions and numerical ones is derived and fairly good agreements are obtained between the theoretical and the experimental results.


2000 ◽  
Vol 154-155 ◽  
pp. 467-472 ◽  
Author(s):  
A Giardini Guidoni ◽  
C Flamini ◽  
F Varsano ◽  
M Ricci ◽  
R Teghil ◽  
...  

Microsurgery ◽  
1990 ◽  
Vol 11 (2) ◽  
pp. 85-90 ◽  
Author(s):  
Israel J. Jacobowitz ◽  
Su Wang ◽  
Samir Basu ◽  
F. Gregory Baumann ◽  
Corrado Marini ◽  
...  

2007 ◽  
Author(s):  
John E. Pulsifer ◽  
Mark S. Tillack ◽  
S. S. Harilal

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