Raman Spectroscopic Evaluation of Silicides Formed with A Scanned Electron Beam

1980 ◽  
Vol 1 ◽  
Author(s):  
R. J. Nemanich ◽  
T. W. Sigmon ◽  
N. M. Johnson ◽  
M. D. Moyer ◽  
S. S. Lau
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electron Beam ◽  
Raman Scattering ◽  
Depth Profile ◽  
Rutherford Backscattering ◽  
Raman Spectroscopic ◽  
Compositional Depth Profile

ABSTRACTRaman scattering and Rutherford backscattering are used to study the products of SEM processing of Pd and Pt thin films on Si(100) substrates. The RBS measurements indicate the compositional depth profile of the resulting silicide while the Raman scattering indicates the crystal structure. For both cases it is found that the resultant silicide is dominated by Pd2 Si (or Pt2Si) structures but evidence of deviations are also noted.

Raman Scattering in LiCoO2 Single Crystals and Thin Films

1997 ◽  
Vol 496 ◽  
Author(s):  
J. D. Perkins ◽  
M. L. Fu ◽  
D. M. Trickett ◽  
J. M. McGraw ◽  
T. F. Ciszek ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Raman Scattering ◽  
Single Crystal ◽  
Single Crystals ◽  
Phonon Modes ◽  
Al Substitution ◽  
Scattering Measurements ◽  
Oriented Polycrystalline

ABSTRACTWe report Raman scattering measurements for uniaxially textured and randomly oriented polycrystalline LiCoO2 min films as well as for LiCoO2 and LiCo0.4Al0.6O2 single crystals. For both the crystalline LiCoO2 thin film samples and the single crystal LiCoO2 samples, well defined phonon modes are observed at Raman shifts of 486 cm−1 and 596 cm−1corresponding to the expected Eg and Alg modes of the layered LiCoO2 crystal structure with R3m symmetry. Upon Al substitution for Co in LiCoO2, the two phonon modes appear to shift to higher energy, but further work is needed to clarify this point.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Electron beam induced effects in Cu/GeSe2amorphous films

2003 ◽  
Vol 777 ◽  
Author(s):  
J.S. Romero ◽  
A.G. Fitzgerald
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Simple Model ◽  
Copper Concentration ◽  
Negative Charge ◽  
Electron Bombardment ◽  
Continuous Operation ◽  
Electron Radiation ◽  
Crystalline Product ◽  
Intense Electron

AbstractCopper migration is observed in the SEM in amorphous GeSe2/Cu thin films when an electron beam is focused in pulsed or continuous operation on the surface of these thin films. The phenomenon can be explained using a simple model in which the population of D- centers is considered to increase upon electron irradiation. The increase in the D- center population is envisaged as due to the breaking of bonds by the electron radiation and by the constant presence of negative charge in irradiated regions. Changes in copper concentration of 20%-30% have been obtained. Additionally we have observed the local crystallization of amorphous GeSe2/Cu thin films in the TEM when the samples were subjected to intense electron bombardment. The crystalline product has been identified as Berzelianite (Cu2Se).

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