Post-Irradiation Annealing of Laser-Formed Silicide Layers

1980 ◽  
Vol 1 ◽  
Author(s):  
M. Wittmer ◽  
M. von Allmen
Keyword(s):  
High Temperature ◽  
The Other ◽  
Silicide Phase ◽  
Vacuum Furnace ◽  
High Temperature Annealing ◽  
X Ray ◽  
Post Irradiation ◽  
Reaction Couple ◽  
Annealing Effects ◽  
Compositional Changes

ABSTRACTWe have investigated the post-irradiation annealing effects of laser-formed Pt, Pd, Rh and Ni-silicides. It was found from Rutherford backscattering and x-ray analysis that compositional changes occur during subsequent high temperature annealing in a vacuum furnace. Generally, a single silicide phase tends to form at the expense of the other phases present following laser irradiation. The surviving phase is not necessarily identical to the end-phase found in a binary solid-state reaction couple of the same system.

Influence of High Temperature Annealing on Microstructure Evolution of Ni-24Fe-14Cr-8Mo Superalloy

2021 ◽  
Vol 904 ◽  
pp. 117-123
Author(s):  
Yi Cui ◽  
Yun Fei Zhang ◽  
Yan Guang Han ◽  
Da Lv
Keyword(s):  
High Temperature ◽  
Microstructure Evolution ◽  
Testing Machine ◽  
Aging Treatment ◽  
Growth Patterns ◽  
High Temperature Annealing ◽  
Rockwell Hardness ◽  
Hardness Testing ◽  
X Ray Diffraction ◽  
X Ray

The effect of high temperature annealing on microstructure evolution of Ni-24Fe-14Cr-8Mo alloy was investigated through Optical Microscopy (OM), Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Rockwell Hardness Testing Machine. Three kinds of grain growth patterns were found at different annealing temperatures due to carbides precipitation and dissolution. After a combination of high temperature annealing and aging treatment, the hardness versus time curves performed a parabolic pattern. The highest hardness was achieved under 1070°C/60 minutes treatment, and the desirable annealing time should be 60 minutes to 90 minutes.

High-temperature annealing effects on molybdenum–silicon contact substrate for vertically structured silicon quantum-dot solar cells

2018 ◽  
Vol 9 (2) ◽  
pp. 135-142
Author(s):  
Xuguang Jia ◽  
Ziyun Lin ◽  
Terry Chien-Jen Yang ◽  
Tian Zhang ◽  
Binesh Puthen-Veettil ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Temperature ◽  
Quantum Dot ◽  
High Temperature Annealing ◽  
Silicon Quantum Dot ◽  
Quantum Dot Solar Cells ◽  
Annealing Effects

Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD

2021 ◽  
Vol 42 (12) ◽  
pp. 122804
Author(s):  
Shangfeng Liu ◽  
Ye Yuan ◽  
Shanshan Sheng ◽  
Tao Wang ◽  
Jin Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Flat Surface ◽  
Epitaxial Lateral Overgrowth ◽  
High Temperature Annealing ◽  
High Quality ◽  
High Crystalline Quality ◽  
X Ray ◽  
Lateral Overgrowth

Abstract In this work, based on physical vapor deposition and high-temperature annealing (HTA), the 4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal recrystallization during the HTA process, the FWHMs of X-ray rocking curves for (002) and (102) planes are encouragingly decreased to 62 and 282 arcsec, respectively. On such an AlN template, an ultra-thin AlN with a thickness of ~700 nm grown by MOCVD shows good quality, thus avoiding the epitaxial lateral overgrowth (ELOG) process in which 3–4 μm AlN is essential to obtain the flat surface and high crystalline quality. The 4-inch scaled wafer provides an avenue to match UVC-LED with the fabrication process of traditional GaN-based blue LED, therefore significantly improving yields and decreasing cost.

High temperature annealing effects on optical performance of TiAlN-based solar selective absorber with TiN IR reflector

Vacuum ◽  
2021 ◽  
pp. 110836
Author(s):  
Lingheng Xiong ◽  
Yan Liu ◽  
Zhaoyu He ◽  
Xingyu Shao ◽  
Dianqing Gong ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Optical Performance ◽  
Annealing Effects

Investigations of Crystalline Phases in Glasses under Various Annealing Conditions

2020 ◽  
Vol 28 ◽  
pp. 14-19
Author(s):  
Zamir V. Shomakhov ◽  
Akhmed M. Karmokov ◽  
Oleg A. Molokanov ◽  
Olga O. Molokanova ◽  
Rita Y. Karmokova ◽  
...  
Keyword(s):  
High Temperature ◽  
Structural Changes ◽  
Irreversible Processes ◽  
High Temperature Annealing ◽  
X Ray Diffraction ◽  
Structural And Phase Transformations ◽  
X Ray ◽  
Air Atmosphere ◽  
Annealing Conditions ◽  
Microchannel Plates

Studies of the temperature dependence of the electrical properties of glasses show that the high-temperature annealing in glasses observed irreversible processes. These processes lead to changes in electrical conductivity, dielectric permittivity, and hence the electrical capacitance, dielectric loss tangent, and other parameters. Obviously, this is due to structural changes in the glass as a result of high-temperature annealing. In this regard, this paper presents studies of structural and phase transformations in glasses used for the production of microchannel plates in the process of high-temperature annealing in vacuum and in the air atmosphere at different times. The studies were conducted by x-ray phase and X-ray diffraction analysis, as well as X-ray fluorescence elemental analysis.

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

scholarly journals Fabrication of Mems Devices by Powder-Filling into DXRL-Formed Molds

1998 ◽  
Vol 546 ◽  
Author(s):  
Terry J. Garino ◽  
Todd Christenson ◽  
Eugene Venturini
Keyword(s):  
High Temperature ◽  
Bulk Material ◽  
The Other ◽  
Ceramic Mold ◽  
Magnetic Powder ◽  
Mems Devices ◽  
X Ray ◽  
Energy Product ◽  
Zn Ferrite ◽  
Micro Actuators

AbstractWe have developed a variety of processes for fabricating components for micro devices based on deep x-ray lithography (DXRL). Although the techniques are applicable to many materials, we have demonstrated them using hard (Nd 2Fe14B) and soft (Ni-Zn ferrite) magnetic materials because of the importance of these materials in magnetic micro-actuators and other devices and because of the difficulty fabricating them by other means. The simplest technique involves pressing a mixture of magnetic powder and a binder into a DXRL-formed mold. In the second technique, powder is pressed into the mold and then sintered to densify. The other two processes involve pressing at high temperature either powder or a dense bulk material into a ceramic mold that was previously made using a DXRL mold. These techniques allow arbitrary 2-dimensional shapes to be made 10 to 1000 μm thick with in-plane dimensions as small as 50μm and dimensional tolerances in the micron range. Bonded isotropic Nd2Fe14B micro-magnets made by these processes had an energy product of 7 MGOe.

High temperature annealing effects on carbon spheres and their applications as anode materials in Li-ion secondary battery

Carbon ◽  
2006 ◽  
Vol 44 (4) ◽  
pp. 724-729 ◽  
Author(s):  
Yi Zheng Jin ◽  
Yong Jung Kim ◽  
Chao Gao ◽  
Yan Qiu Zhu ◽  
Andrzej Huczko ◽  
...  
Keyword(s):  
High Temperature ◽  
Anode Materials ◽  
High Temperature Annealing ◽  
Carbon Spheres ◽  
Secondary Battery ◽  
Annealing Effects ◽  
Li Ion
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