Time-Resolved Raman Scattering and Transmission Measurements During Pulsed Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
A. Compaan ◽  
H. W. LO ◽  
A. Aydinli ◽  
M. C. Lee
Keyword(s):  
Raman Scattering ◽  
Laser Annealing ◽  
Excitation Pulse ◽  
Dye Laser ◽  
Crystalline Lattice ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Complete Recrystallization ◽  
Transmission Measurements ◽  
Anti Stokes

ABSTRACTRaman Scattering from a 7 nsec pulsed dye laser has been used to determine the onset of recrystallization following an 8 nsec dye laser excitation pulse in ion-implanted silicon. We find essentially complete recrystallization 59 nsec after the first excitation pulse and from Stokes-anti-Stokes ratios we find at 59 nsec a crystalline lattice temperature of 600 ± 200° C. Time-resolved transmission measurements at λ = 1.15 µm also demonstrate that no molten phase has occurred even though the usual reflectivity enhancement is observed.

A Detailed Examination of Time-Resolved Pulsed Raman Temeperature Measurements of Laser Annealed Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
G. E. Jellison ◽  
D. H. Lowndes ◽  
R. F. Wood
Keyword(s):  
Optical Properties ◽  
Pulse Width ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Detailed Examination ◽  
Temperature Gradients ◽  
Probe Laser ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Anti Stokes

ABSTRACTRaman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.

Raman Studies of Carrier Activation in Laser Annealed GaAs Capped with Silicon Nitride

1986 ◽  
Vol 74 ◽  
Author(s):  
A. Compaan ◽  
S. C. Abbi ◽  
H. D. Yao ◽  
A. Bhat ◽  
F. Hashmi
Keyword(s):  
Silicon Nitride ◽  
Laser Pulse ◽  
Raman Scattering ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Dye Laser ◽  
Pulsed Laser Annealing ◽  
Wide Range ◽  
Xecl Excimer Laser

AbstractCarrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2 × 1014/cm2 @ 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ = 728 nm) or a XeCl excimer laser (λ = 308 nm). Carrier concentrations were measured by plasmon Raman scattering over a wide range of anneal energy densities. Compared with capless laser annealing, much higher carrier activations were achieved when the annealing laser pulse was incident through a Si3N4 cap.

Stress Effects on Raman Measurements of Pulsed Laser Annealed Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
G. E. Jellison ◽  
R. F. Wood
Keyword(s):  
Raman Scattering ◽  
Laser Irradiation ◽  
Laser Annealing ◽  
Phonon Frequency ◽  
Pulsed Laser ◽  
Front Surface ◽  
Surface Region ◽  
Pulsed Laser Annealing ◽  
Anti Stokes ◽  
Pulsed Laser Irradiation

ABSTRACTIt has recently been shown that the front surface region of the silicon lattice is severely strained during pulsed laser irradiation. This uniaxial strain reduces the symmetry of the front surface region, resulting in additional shifts and splittings of the phonon frequency and changes in the Raman scattering tensor. It is shown that, for the case of pulsed laser irradiation, the phonon frequency is increased, and the 3-fold degenerate optical phonon is split into a singlet and a doublet. The changes in the Raman scattering tensor make it non-symmetric, and generally invalidate the technique used by Compaan et al. to determine the cross section experimentally. The complications introduced by the presence of stress during pulsed laser annealing, coupled with the temperature dependence of the optical and Raman tensors, make a simple interpretation of the Stokes to anti-Stokes ratio in terms of lattice temperature extremely unreliable.

Calculations Pertaining to Raman Scattering During Laser Annealing of Ion-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
R. F. Wood ◽  
D. H. Lowndes ◽  
G. E. Giles
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Rapid Onset ◽  
Simultaneous Occurrence ◽  
Raman Signal ◽  
Molten Silicon ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Anti Stokes ◽  
Ion Implanted

ABSTRACTCompaan and co-workers have reported the results of time-resolved optical experiments on ion-implanted silicon which they claim prove the melting model of pulsed laser annealing cannot be correct. These results concern the rapid onset of a Raman signal after a heating laser pulse, the simultaneous occurrence of a Raman signal and the high reflectivity phase characteristic of molten silicon, and the lattice temperature measured by the Raman Stokes/anti-Stokes intensity ratio. In this paper, we show by detailed numerical calculations with the melting model that there is, in fact, excellent agreement between the results of the calculations and the experimental results reported by Compaan and co-workers.

Electron-Phonon and Phonon-Phonon Interactions Under Laser Annealing Conditions

1984 ◽  
Vol 35 ◽  
Author(s):  
Alvin Compaan
Keyword(s):  
Laser Annealing ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Resonance Effects ◽  
Pulsed Laser Annealing ◽  
Annealing Conditions ◽  
Silent Phase ◽  
High Carrier ◽  
Anti Stokes ◽  
First Time

ABSTRACTSince the first time-resolved Raman studies of pulsed laser annealing (PLA) effects in Si, a number of cw Raman studies have been performed which provide a much improved basis for understanding the consequences on Raman spectra of temperature-dependent resonance effects, high carrier density effects, phonon anharmonicity, and strain effects. Here we briefly review these effects and then analyze the latest pulsed Raman studies of PLA including Stokes/anti-Stokes ratios, the shift and shape of the first order line, and time-resolved second-order spectra. The Raman data indicate the existence of a Raman-silent phase followed by a rapidly cooling solid which begins within 300 K of the normal melting temperature of Si. The Raman data also give evidence of carrier densities in the recrystallizing solid of ~1−2×l019/cm3 .

Time-resolved dynamics of resonant and nonresonant broadband picosecond coherent anti-Stokes Raman scattering signals

2005 ◽  
Vol 87 (26) ◽  
pp. 264103 ◽  
Author(s):  
Sukesh Roy ◽  
Terrence R. Meyer ◽  
James R. Gord
Keyword(s):  
Raman Scattering ◽  
Time Resolved ◽  
Anti Stokes

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

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