Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics

2006 ◽  
Vol 917 ◽  
Author(s):  
Sandrine Rivillon Amy ◽  
Yves J Chabal ◽  
Fabrice Amy ◽  
Antoine Kahn ◽  
Cristiano Krugg ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Water Soluble ◽  
Chemical Cleaning ◽  
X Ray ◽  
Native Oxides ◽  
High K ◽  
Controlled Environments ◽  
Wet Chemical ◽  
The Stability ◽  
Poor Stability

AbstractOne of the major difficulties preventing the wide use of germanium (epi or bulk) as a gate material is the poor stability of its oxide, leading to reproducibility and reliability issues. In contrast to silicon, the nature and thickness of Ge “native” oxides are history dependent, and most phases of germanium oxide are water-soluble. As a result, the procedures for passivating Ge surfaces with hydrogen (HF last) are more complex and less forgiving.We have used infrared absorption spectroscopy and x-ray photoelectron spectroscopy to investigate the nature of oxidized and H-terminated Ge surfaces. The GeO2, GeO and GeC phases have been identified and quantified as a function of processing conditions. The stability of the H-terminated surfaces has been examined in air and in controlled environments. The H-passivated Ge surfaces are found to be much less stable in air than H-terminated Si surfaces.

Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH4F Treated Si(111) Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
Takeo Hattori ◽  
Hiroki Ogawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Native Oxide ◽  
X Ray ◽  
Chemical Treatments ◽  
Chemical Structures ◽  
Native Oxides ◽  
Ft Ir ◽  
Wet Chemical ◽  
Silicon Interface

ABSTRACTChemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

Preparation and Characterization of Ni2+-Montmorillonite/Polyvinyl Alcohol Water-Soluble Nanocomposite Film

2005 ◽  
Vol 13 (8) ◽  
pp. 839-846 ◽  
Author(s):  
Li-Ping Wang ◽  
Yun-Pu Wang ◽  
Fa-Ai Zhang
Keyword(s):  
Polyvinyl Alcohol ◽  
Photoelectron Spectroscopy ◽  
Thermal Characteristics ◽  
Water Soluble ◽  
Scanning Calorimetry ◽  
Xps Spectra ◽  
X Ray ◽  
Alcohol Water ◽  
Ft Ir ◽  
Silicate Layers

A new type of nano-composite film was prepared from polyvinyl alcohol, Ni2+-montmorillonite (Ni2+-MMT), defoamer, a levelling agent and a plasticizer. Its thermal characteristics were studied by Differential Scanning Calorimetry (DSC). The intermolecular interactions were measured by Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS), and the tensile strength (TS) and elongation at break (%E) were measured. The microstructures were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). FT-IR and XPS spectra indicated that cross-linking has taken place between PVA and Ni2+-MMT. XRD and AFM indicate that the PVA molecules had inserted themselves into the silicate layers of MMT, exfoliating them and dispersing them randomly into the PVA matrix. Compared to pure PVA film, the TS of the films was increased and %E decreased when the Ni2+-Montmorillonite was added and the dissolution temperature of the film was also reduced.

CVD Boron Carbo-Nitride as Pore Sealant for Ultra Low-K Interlayer Dielectrics

2005 ◽  
Vol 863 ◽  
Author(s):  
P. Ryan Fitzpatrick ◽  
Sri Satyanarayana ◽  
Yangming Sun ◽  
John M. White ◽  
John G. Ekerdt
Keyword(s):  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
K Value ◽  
X Ray ◽  
Dimethylamine Borane ◽  
The Stability ◽  
Low K ◽  
Secondary Ion ◽  
Sims Depth Profiling

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.

scholarly journals Selective chelating precipitation of palladium metal from electroplating wastewater using chitosan and its derivative

2020 ◽  
Vol 38 (3-4) ◽  
pp. 113-126
Author(s):  
Qiaoling Xie ◽  
Gaojie Liang ◽  
Tao Lin ◽  
Fuming Chen ◽  
Dandan Wang ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Photoelectron Spectroscopy ◽  
Water Soluble ◽  
Optimum Conditions ◽  
Chitosan Derivative ◽  
Aqua Regia ◽  
Electroplating Wastewater ◽  
X Ray ◽  
Approach Method ◽  
Palladium Metal

A study on selective chelating precipitation of palladium metal from real electroplating wastewater using chitosan and its water-soluble derivative was conducted. The pH parameter, the concentrations of chitosan and its water-soluble derivative and the chelating precipitation time were experimentally investigated, and the optimum conditions were determined. The results revealed that both chitosan and its water-soluble derivative acted as chelating precipitation agents. Rapid chelating precipitation occurred when chitosan was added to real electroplating wastewater containing the chitosan derivative, thereby improving removal efficiency of palladium in different forms up to 95% under the optimum condition of 0.2 g/L chitosan and 0.16 mg/L derivative at pH 2.5. Then, dissolution experiments showed that chelating precipitation products could be dissolved in aqua regia. Additionally, selective chelating precipitation of palladium by chitosan and its derivative was characterized using X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Thus, it can be concluded that the combined utilization of chitosan and its water-soluble derivative is a promising approach method for the removal of different forms of palladium from real electroplating wastewater.

Controlled Stepwise Growth of Siloxane Chains Using Bivalent Building Units With Different Functionalities

2010 ◽  
Vol 1272 ◽  
Author(s):  
Nils Salingue ◽  
Dominic Lingenfelser ◽  
Pavel Prunici ◽  
Hess Peter
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Silicon Surfaces ◽  
Chain Growth ◽  
One Dimensional ◽  
X Ray ◽  
Sioh Group ◽  
Wet Chemical ◽  
Chemical Condensation

AbstractOrganic/inorganic hybrids of silicon and their subsequent chemical modification are of interest for tailoring and structuring surfaces on the nanoscale. The formation of monolayers on hydroxylated silicon surfaces was employed to synthesize molecular dimethylsiloxane chains by wet-chemical condensation reactions, using dimethylmonochlorosilane as the precursor. The SiH group of the resulting dimethylsilyl termination could be selectively oxidized to the SiOH group, which opened the possibility of bonding another species. By repeating the condensation and oxidation cycle the stepwise growth of one-dimensional dimethylsiloxane chains was achieved. The ongoing chain growth was characterized by attenuated total reflection (ATR) Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and determination of the surface energy by contact-angle experiments.

Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application

2007 ◽  
Vol 556-557 ◽  
pp. 655-658 ◽  
Author(s):  
Andreas Fissel ◽  
M. Czernohorsky ◽  
R. Dagris ◽  
H.J. Osten
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gadolinium Oxide ◽  
Flat Band ◽  
Growth Interface ◽  
X Ray ◽  
Fixed Charges ◽  
High K ◽  
Structural And Electrical Properties ◽  
Cv Measurements ◽  
Oriented Layers

We investigated the growth, interface formation as well as the structural and electrical properties of crystalline gadolinium oxide (Gd2O3) directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. The Gd2O3 layers were found to grow epitaxially resulting in the formation of flat (111) oriented layers with the cubic bixbyite type of structure. X-ray photoelectron spectroscopy measurements reveal a silicate-like Gd2O3/SiC interface. Furthermore, conduction and valence band discontinuities at the Gd2O3/6H-SiC interface were estimated with 1.9 eV and 1.2 eV, respectively. The fabricated capacitors exhibit suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1V and breakdown fields > 4.3 MV/cm for layers with 14 nm thickness. The CV measurements exhibit only small negative flat band shifts and a very small hysteresis, resulting from fixed charges or interface trap levels in the range of 1x1012 cm-2. These properties make Gd2O3 suitable for high-k application also for SiC.

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