The Properties of Dual Acceptor Delta-Doped ZnO Thin Films

2015 ◽  
Vol 1805 ◽  
Author(s):  
T N. Oder ◽  
R.C. Gade ◽  
C. Merlo
Keyword(s):  
Thin Films ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Hall Effect Measurements ◽  
Ceramic Targets ◽  
Post Deposition ◽  
Neutral Acceptor

ABSTRACTWe report the investigation of ZnO thin films delta-doped with lithium and phosphorus introduced simultaneously. The films were deposited from high purity ceramic targets of ZnO and Li3PO4 on c-plane sapphire substrates by RF magnetron sputtering. An undoped ZnO film with a low background electron concentration was used as the buffer layer on the sapphire substrate. The doped films were prepared by carrying simultaneous sputtering from the ZnO and Li3PO4 ceramic targets. For uniform doped films, the simultaneous deposition from the ZnO and Li3PO4 was uninterrupted. For the delta-doped films on the other hand, deposition from the ZnO target was uninterrupted while that from the Li3PO4 was interrupted periodically using a shutter. Post-deposition annealing was carried using a rapid thermal processor in O2 at 900 oC for 3 min. Results obtained from photoluminescence spectroscopy measurements at 12 K revealed acceptor-related luminescence peaks at 3.35 eV, possibly due to the transition from exciton bound to a neutral acceptor. The x-ray diffraction 2θ-scans showed a single peak at about 34.4o. Hall effect measurements revealed p-type conductivities with an average Hall concentrations of 3.8 x 1013 cm-3 in uniform doped samples and 1.5 x 1016 cm-3 in delta doped samples. However, in some cases the Hall coefficients had both positive and negative values, making the determination of the carrier type inconclusive. The fluctuation in the carrier type could be due to the lateral inhomogeneity in the hole concentration caused by signal noise impacting the small Hall voltages in the measurements.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Development of Human IgE Biosensor Using TFBAR Devices with Shear Mode ZnO Piezoelectric Thin Films

2014 ◽  
Vol 1599 ◽  
Author(s):  
Ying-Chung Chen ◽  
Wei-Tsai Chang ◽  
Chien-Chuan Cheng ◽  
Jia-Ming Jiang ◽  
Kuo-Sheng Kao
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Zno Thin Films ◽  
Shear Mode ◽  
X Ray Diffraction ◽  
Piezoelectric Thin Films ◽  
Deposition Parameters ◽  
Tilting Angle ◽  
Film Bulk

ABSTRACTA novel allergy biosensor is designed and fabricated by using thin film bulk acoustic resonator (TFBAR) devices with shear mode ZnO piezoelectric thin films. To fabricate TFBAR devices, the off-axis RF magnetron sputtering method for the growth of piezoelectric ZnO piezoelectric thin films is adopted. The influences of the relative distance and sputtering parameters are investigated. In this report, the piezoelectric ZnO thin films with tilting angle are set by controlling the deposition parameters. The properties of the shear mode ZnO thin films are investigated by X-ray diffraction and scanning electron microscopy. The frequency response is measured using an HP8720 network analyzer with a CASCADE probe station. The resonance frequency of the shear mode is 796.75 MHz. The sensitivity of the shear mode is calculated to be 462.5 kHz·cm2/ng.

Structural and Optical Properties of ZnO Film Precursors for Multilayered Transparent Solar Cell Electrodes

2015 ◽  
Vol 1132 ◽  
pp. 217-223
Author(s):  
E.R. Rwenyagila ◽  
B. Agyei-Tuffour ◽  
M.G.Z. Kana ◽  
O. Akin-Ojo ◽  
W.O. Soboyejo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Deposition Power ◽  
Different Temperatures

This work examines the modification of the structural and optical properties of ZnO thin films by control of deposition and post-treatment parameters. ZnO thin films were deposited by RF magnetron sputtering from a ceramic target locally made at SHESTCO in Abuja, Nigeria. X-ray diffraction measurements characterized the different films prior to thermal annealing as extremely amorphous with average UV-VIS transmittance spectra between 80 and 90%. Annealing at different temperatures and time spans influenced the formation of Wurtzite (002) oriented ZnO crystallites. Contrary to the crystallinity of the films, which was strongly influenced by the deposition power, the optical transmission of the films was only slightly influenced by the deposition power and it was less sensitive to the crystallinity of ZnO thin films.

scholarly journals Properties of RF Magnetron-Sputtered Copper Gallium Oxide (CuGa2O4) Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 921
Author(s):  
Ashwin Kumar Saikumar ◽  
Sreeram Sundaresh ◽  
Shraddha Dhanraj Nehate ◽  
Kalpathy B. Sundaram
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Wavelength Region ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Morphological Studies ◽  
Increasing Trend ◽  
First Time ◽  
Post Deposition

Thin films of CuGa2O4 were deposited using an RF magnetron-sputtering technique for the first time. The sputtered CuGa2O4 thin films were post-deposition annealed at temperatures varying from 100 to 900 °C in a constant O2 ambience for 1.5 h. Structural and morphological studies were performed on the films using X-ray diffraction analysis (XRD) and a Field Emission Scanning Electron Microscope (FESEM). The presence of CuGa2O4 phases along with the CuO phases was confirmed from the XRD analysis. The minimum critical temperature required to promote the crystal growth in the films was identified to be 500 °C using XRD analysis. The FESEM images showed an increase in the grain size with an increase in the annealing temperature. The resistivity values of the films were calculated to range between 6.47 × 103 and 2.5 × 108 Ωcm. Optical studies were performed on all of the films using a UV-Vis spectrophotometer. The optical transmission in the 200–800 nm wavelength region was noted to decrease with an increase in the annealing temperature. The optical bandgap value was recorded to range between 3.59 and 4.5 eV and showed an increasing trend with an increase in the annealing temperature.

Electrical Properties Dependence on Substrate Temperature of Sputtered ZnO Nanoparticles Thin Films on Teflon Substrates

2013 ◽  
Vol 795 ◽  
pp. 403-406 ◽  
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Mohd Hanafi Ani ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage

Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.

scholarly journals ZnO:Al Grown by Sputtering from Two Different Target Sources: A Comparison Study

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Abdalla A. Alnajjar
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Transparent Conductive Oxide ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ceramic Targets

Al-doped ZnO thin films were deposited from two different targets. Ceramic targets were used in RF magnetron sputtering, whereas pulsed magnetron sputtering was used to grow films from powder targets. ZnO:Al films with different thicknesses were sputtered directly on soda-lime glass substrates. The film thickness was in the 0.04–2.0 μm range. The microstructure, such as the grain size and the texture, of the two differently grown ZnO:Al transparent conductive oxide films of different thickness, was studied using X-ray diffractionθ/2θscans. The optical properties, such as the transmittance and reflectance, were measured using a UV-Vis-NIR spectrometer. Further, the sheet resistance, resistivity, carrier concentration, and Hall mobility of these ZnO:Al thin films were measured as a function of film thickness. These results obtained from the two different deposition techniques were compared and contrasted.

CONTRASTIVE STUDY ON THE STRUCTURE AND THE ULTRAVIOLET ABSORPTION PROPERTY OF MULTIPLE-DOPED AND ELEMENT-DOPED ZnO THIN FILMS

2017 ◽  
Vol 24 (07) ◽  
pp. 1750089 ◽  
Author(s):  
YUNYUN XU ◽  
TAO ZHANG ◽  
ZHENRONG LIN ◽  
YANFENG TIAN ◽  
SHANDAN ZHOU
Keyword(s):  
Thin Films ◽  
Dominant Role ◽  
Rf Magnetron Sputtering ◽  
Uv Absorption ◽  
Zno Thin Films ◽  
Absorption Property ◽  
X Ray Diffraction ◽  
Absorption Properties ◽  
Contrastive Study ◽  
Doped Zno

Sb2O3- and CeO2-doped ZnO thin films were prepared by RF magnetron sputtering technique. The influence of Sb2O3 and CeO2 on the structure and ultraviolet (UV) absorption properties was studied by X-ray diffraction and UV–Vis spectrophotometry. Results show that multiple doping of films had a prominent effect on the development of crystal grains and the UV absorption property. Ce and Sb exist in many forms in the ZnO film. The multiple-doped films also show enhanced UVA absorption, and the UV absorption peak widens and the absorption intensity increases. Sb plays a dominant role on the structure and UV absorption of ZnO thin films, which are enhanced by Ce.

scholarly journals Preparation and Characterization of Indium and Gallium doped Transparent ZnO Films for Solar Cell Applications

2018 ◽  
Vol 34 (5) ◽  
pp. 2325-2331
Author(s):  
Reuben Seth Richter ◽  
A. Yaya ◽  
D. Dodoo-Arhin ◽  
B. Agyei-Tuffour ◽  
Robinson Juma Musembi ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Spray Pyrolysis Deposition ◽  
Hall Effect Measurements

In this work, the effect of indium (In) and gallium (Ga) dopants on the structural, optical and electrical properties of ZnO thin films was studied. ZnO thin films were deposited on glass substrates at 400°C using the spray pyrolysis deposition technique. X-ray diffraction (XRD) results indicated that both undoped and doped ZnO films had (002) preferred orientation. The undoped ZnO films were found to exhibit high transmittance above 80%, while indium-doped (In:ZnO) and gallium-doped (Ga:ZnO) films had transmittance above 60% and 70% respectively. From the Hall Effect measurements, doping improved the conductivity of the ZnO thin films however, In:ZnO films showed higher electrical conductivity compared to Ga:ZnO films. Electron probe microanalysis (EPMA) results were used to confirm the presence of the respective dopants in the thin film samples.

Investigation of Optical Properties of ZnO Films Deposited by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 215-218
Author(s):  
Shuang Li ◽  
Feng Xiang Wang ◽  
Gang Fu ◽  
Yan Ju Ji ◽  
Jun Qing Zhao
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Sputtering Pressure

ZnO thin films with a strong c-axis orientation have been successfully deposited on quartz glass substrates at room temperature by radio frequency (rf) magnetron sputtering technology. X-ray diffraction, Rutherford backscattering, and prism coupling method were used to investigate the structure and optical properties of ZnO thin films. X-ray diffraction results shown lower sputtering pressure is propitious to increasing the crystallinity, and enhancing the c-axis orientation of the films. Rutherford backscattering analysis revealed that the films were stoichiometric ZnO, and as the sputtering pressure decreasing, the deposition rate were increased from 0.758 3nm/min to 2.892 nm min for sputtering pressure in the range from 1.0Pa to 0.5Pa. Under the lower sputtering pressure (0.5Pa) condition, the results obtained by prism coupling method investigation confirmed that the effective refractive index of ZnO films (no=1.8456，ne=1.8276) at a wavelength of 633nm is more close to Crystal Refractive index.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Sign in / Sign up

Export Citation Format

Share Document