Thermionic Field Emission Transport at Nanowire Schottky Barrier Contacts

2015 ◽  
Vol 1785 ◽  
pp. 19-25
Author(s):  
Kan Xie ◽  
Steven Allen Hartz ◽  
Virginia M. Ayres
Keyword(s):  
Dielectric Constant ◽  
Schottky Barrier ◽  
Effective Mass ◽  
Field Emission ◽  
Relative Dielectric Constant ◽  
Semiconductor Nanowires ◽  
Materials Properties ◽  
Thermionic Field Emission ◽  
High Carrier ◽  
General Method

ABSTRACTThe high carrier concentrations typically reported for nanowire devices indicate that when Schottky barrier transport is present, it occurs in the thermionic field emission regime with a substantial but not exclusive tunneling component. Analysis by thermionic field emission is difficult due to its multivariate nature. In recent work, we developed a mathematical stability approach that greatly simplified the evaluation of the multivariate thermionic field emission parameters. This is a general method with potentially wide applicability, requiring only the effective mass m* and relative dielectric constant εr for a given semiconductor as inputs. In the present work, we investigate the influence of the materials properties effective mass m* and relative dielectric constant εr on stability for a range of real and simulated semiconductor nanowires. A further investigation of temperature sensitivity and regime trends is presented.

scholarly journals Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime

2021 ◽  
Vol 24 (1) ◽  
pp. 16-21
Author(s):  
A. Latreche ◽  
Keyword(s):  
Schottky Barrier ◽  
Field Emission ◽  
Image Force ◽  
Theoretical Work ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Emission Models ◽  
Current Densities ◽  
Relationship Of

In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.

Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling

2006 ◽  
Vol 15 (11-12) ◽  
pp. 1949-1953 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Norio Tokuda ◽  
Masahiko Ogura ◽  
Sung-Gi Ri ◽  
Shin-ichi Shikata
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Field Emission ◽  
Schottky Barrier Diodes ◽  
Thermionic Field Emission ◽  
Emission Modeling

1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes

2015 ◽  
Vol 14 (03) ◽  
pp. 1550029 ◽  
Author(s):  
Alexey V. Klyuev ◽  
Arkady V. Yakimov ◽  
Irene S. Zhukova
Keyword(s):  
Schottky Barrier ◽  
Field Emission ◽  
Thermionic Emission ◽  
Low Frequency ◽  
Schottky Barrier Diodes ◽  
Transport Mechanisms ◽  
Current Dependence ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Multiple Charge

We have studied the forward current–voltage (I–V) characteristics of Ti–Au /n-type GaAs Schottky barrier diodes. However, we found some anomalies in I–V characteristics. Hence, we have considered a model that incorporates thermionic emission, thermionic-field emission and leakage components. Leakage component is linear and visible at rather small currents. The anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the diodes. It is shown that thermionic-field emission and leakage are the sources of low-frequency (1/f) noise in such type of diodes. Various Schottky diode parameters were also extracted from the I–V characteristics and current dependence of spectrum of 1/f voltage noise.

Effect Of Moisture On The Physical Properties Of Polyimide Films

1991 ◽  
Vol 227 ◽  
Author(s):  
Rajeevi Subramanian ◽  
Michael T. Pottiger ◽  
Jacqueline H. Morris ◽  
Joseph P. Curilla
Keyword(s):  
Dielectric Constant ◽  
Steady State ◽  
Electrical Properties ◽  
Relative Humidity ◽  
Quartz Crystal ◽  
Moisture Absorption ◽  
Relative Dielectric Constant ◽  
Moisture Uptake ◽  
Polyimide Films ◽  
Effect Of Moisture

ABSTRACTMoisture absorption and its effect on electrical properties were measured for several polyimides. A Quartz Crystal Microbalance (QCM) was used to investigate the moisture absorption in BPDA/PPD, PMDA/ODA, and BTDA//ODA/MPD polyimides. The steady-state moisture uptake in polyimides as a function of relative humidity (RH) was determined by exposing film samples to successively higher RH values ranging from 10 to 85% at 25°C. The isothermal moisture absorption as a function of percent RH was found to be nearly linear for all of the polyimides studied. The effect of moisture on the electrical properties of a BPDA/PPD polyimide was also investigated. The relative dielectric constant at 25 °C was found to be a linear function of the moisture absorbed.

The Research on the Piezoelectric and Dielectric Properties of Bi0.5(Nak)0.5-BaTiO3 Lead-Free Ceramics

2014 ◽  
Vol 1035 ◽  
pp. 422-425
Author(s):  
Jian Yong Guo ◽  
Tao Sheng Zhou ◽  
Ji Hong Liao
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Perovskite Structure ◽  
Relative Dielectric Constant ◽  
Lead Free ◽  
Reactive Sintering ◽  
Lead Free Ceramics ◽  
Xrd Patterns ◽  
Sintering Method

The Bi0.5(Na1-xKx)0.5-yBaTiO3(BNK-BT) lead-free ceramics have been prepared by the solild reactive sintering method. XRD patterns show the BNK-BT ceramics had a perovskite structure. Piezoelectric and dielectric properties of the ceramics also have been studied. The results show that the samples had the best piezoelectric and dielectric properties when x=0.20, y=0.10. And the maximum of d33is 149 pC/N, while the relative dielectric constant is 1087.

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