Patterning Anodic Porous Alumina with Resist Developers for Patterned Nanowire Formation

2015 ◽  
Vol 1785 ◽  
pp. 13-18 ◽  
Author(s):  
SeungYeon. Lee ◽  
Daniel Wratkowski ◽  
Jeong-Hyun Cho
Keyword(s):  
Silicon Nanowires ◽  
Porous Alumina ◽  
Chemical Vapor ◽  
Initial Step ◽  
Metal Substrate ◽  
Nanowire Arrays ◽  
Anodic Porous Alumina ◽  
Anodization Process ◽  
Vertically Aligned ◽  
Al Thin Film

ABSTRACTFormation of patterned metal and semiconductor (e.g. silicon) nanowires is achieved using anodic aluminum oxide (AAO) templates with porous structures of different heights resulting from an initial step difference made by etching the aluminum (Al) thin film with a photoresist developer prior to the anodization process. This approach allows for the growth of vertically aligned nanowire arrays on a metal substrate, instead of an oriented semiconductor substrate, using an electroplating or a chemical vapor deposition (CVD) process. The vertically aligned metal and semiconductor nanowires defined on a metal substrate could be applied to the realization of vertical 3D transistors, field emission devices, or nano-micro sensors for biological applications.

scholarly journals Small-Diameter Magnetic and Metallic Nanowire Arrays Grown in Anodic Porous Alumina Templates Anodized in Selenic Acid

2021 ◽  
Author(s):  
Mahdieh Ahmadzadeh ◽  
Mohammad Almasi Kashi ◽  
Mohammad Noormohammadi ◽  
Abdolali Ramazani
Keyword(s):  
Oxalic Acid ◽  
Porous Alumina ◽  
Small Diameter ◽  
Nanowire Arrays ◽  
Pore Filling ◽  
Selenic Acid ◽  
Anodic Porous Alumina ◽  
Formation Pattern ◽  
20 Nm ◽  
Optimized Conditions

Abstract Despite the introduction of selenic acid for anodic porous alumina (APA) preparation with small nanopore diameters (< 20 nm), no attempt has been made to use it in the fabrication of small-diameter magnetic and metallic nanowire arrays. In this paper, considering the high cost of selenic acid, it has been attempted to initially use oxalic acid in preparation of an ordered pattern in the first anodization step, and then employ selenic acid for the second anodization step by matching the appropriate voltage. By investigating the nanopore formation pattern in both acids, it was shown that the nanopores formed in the selenic acid had considerably smaller diameter (13 nm) than that of oxalic acid (35 nm). Under optimized conditions of electrodeposition, various metals were then grown in the selenic APA templates in order to fabricate nanowires with small diameters. The pore filling percentage and crystalline properties were also investigated.

Hexagonal-arranged ZnO Nanowire Arrays by Using Au Nanohole Membranes as Fabrication Template

2004 ◽  
Vol 849 ◽  
Author(s):  
H. J. Fan ◽  
W. Lee ◽  
K. Nielsch ◽  
M. Zacharias ◽  
A. Dadgar ◽  
...  
Keyword(s):  
Large Scale ◽  
Porous Alumina ◽  
Gold Catalyst ◽  
Sensor Arrays ◽  
Zno Nanowires ◽  
Nanowire Arrays ◽  
Guided Growth ◽  
Potential Applications ◽  
Vertically Aligned ◽  
Ordered Porous

ABSTRACTA new template method for large-scale fabrication of hexagonally patterned and vertically aligned ZnO nanowires is demonstrated. The process involves a novel type of metal membrane, a gold catalyst template produced using the membrane as deposition mask, and the catalyst-guided growth of ZnO nanowires. The metal membranes, composed of hexagonal nanohole arrays, are electrochemically replicated from ordered porous alumina. The ZnO nanowires obtained have a uniform alignment perpendicular to the GaN surface and a distribution according to the pattern defined by the nanohole membrane. Such periodically arranged ZnO nanowires have potential applications as sensor arrays and piezoelectric transducers.

scholarly journals FORMATION OF ANODIC POROUS ALUMINA IN OXALIC ACID AND ELECTRODEPOSITION OF NI.

2020 ◽  
Vol 2 (33(60)) ◽  
pp. 37-41
Author(s):  
A. Khamidov ◽  
S. Nurmanov ◽  
O. Ruzimuradov ◽  
A. Parmonov
Keyword(s):  
Oxalic Acid ◽  
Aluminum Oxide ◽  
Pore Size ◽  
Porous Alumina ◽  
3D Metals ◽  
Interpore Distance ◽  
Anodic Porous Alumina ◽  
Anodization Process ◽  
Nanoporous Anodic Aluminum Oxide ◽  
Tubular Membranes

Nanoporous anodic aluminum oxide (AAO) tubular membranes were fabricated from aluminum alloy tubes in sulfuric and oxalic acid electrolytes using a two-step anodization process. The membranes were investigated for characteristics such as pore size, interpore distance and thickness by varying applied voltage and electrolyte concentration. Morphology of the membranes was examined using light optical and scanning electron microscopy and characterized using Image software. Results showed that membranes having narrow pore size and uniform pore distribution with parallel channel arrays were obtained. The pore sizes were ranging from 10 to 100 nm and the wall thicknesses 60 μm. The catalysts are obtained by impregnation of 3d metals into nanosized pores of aluminum oxide. The obtained catalysts based on nickel and porous Al2O3 are studied by scanning microscopy (SEM-EDX). The results of SEM-EDX analysis shows that a spongy structure with filament sizes of 100 nanometers containing particles of 3d metals formed on the surface of the aluminum oxide matrix.

scholarly journals A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
Tzuen-Wei Ho ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Silicon Nanowires ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Process Conditions ◽  
Vertical Alignment ◽  
Cooling Process ◽  
Surface Reflection ◽  
Vertically Aligned ◽  
Novel Method ◽  
High Degree

In this study we grew silicon nanowires (SiNWs) on Si (111) substrate by gold-catalyzed vapor liquid solid (VLS) process using tetrachlorosilane (SiCl4) in a hot-wall chemical vapor deposition reactor. SiNWs with 150–200 nm diameters were found to grow along the orientations of all〈111〉family, including the vertical and the inclined, on Si (111). The effects of various process conditions, including SiCl4concentration, SiCl4feeding temperature, H2annealing, and ramp cooling, on the crystal quality and growth orientation of SiNWs, were studied to optimize the growth conditions. Furthermore, a novel method was developed to reliably grow vertically aligned SiNWs on Si (111) utilizing the principle of liquid phase epitaxy (LPE). A ramp-cooling process was employed to slowly precipitate the epitaxial Si seeds on Si (111) after H2annealing at 650°C. Then, after heating in SiCl4/H2up to 850°C to grow SiNWs, almost 100% vertically aligned SiNWs could be achieved reproducibly. The high degree of vertical alignment of SiNWs is effective in reducing surface reflection of solar light with the reflectance decreasing with increasing the SiNWs length. The vertically aligned SiNWs have good potentials for solar cells and nano devices.

Fabrication and optical property of metal nanowire arrays embedded in anodic porous alumina membrane

2016 ◽  
Vol 55 (6S1) ◽  
pp. 06GH09 ◽  
Author(s):  
Kouichi Takase ◽  
Tomohiro Shimizu ◽  
Kosuke Sugawa ◽  
Takashige Aono ◽  
Yuma Shirai ◽  
...  
Keyword(s):  
Optical Property ◽  
Porous Alumina ◽  
Nanowire Arrays ◽  
Alumina Membrane ◽  
Anodic Porous Alumina ◽  
Porous Alumina Membrane ◽  
Metal Nanowire

scholarly journals Small-diameter magnetic and metallic nanowire arrays grown in anodic porous alumina templates anodized in selenic acid

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Mahdieh Ahmadzadeh ◽  
Mohammad Almasi Kashi ◽  
Mohammad Noormohammadi ◽  
Abdolali Ramazani
Keyword(s):  
Porous Alumina ◽  
Small Diameter ◽  
Nanowire Arrays ◽  
Selenic Acid ◽  
Anodic Porous Alumina

Formation and phase transformation of selenium nanowire arrays in anodic porous alumina templates

2005 ◽  
Vol 276 (3-4) ◽  
pp. 674-679 ◽  
Author(s):  
X.Y. Zhang ◽  
Y. Cai ◽  
J.Y. Miao ◽  
K.Y. Ng ◽  
Y.F. Chan ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Porous Alumina ◽  
Nanowire Arrays ◽  
Anodic Porous Alumina

scholarly journals Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4497-4503
Author(s):  
Liying Zhang ◽  
Xiangqian Xiu ◽  
Yuewen Li ◽  
Yuxia Zhu ◽  
Xuemei Hua ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Light Trapping ◽  
High Surface ◽  
Volume Ratio ◽  
Average Diameter ◽  
Nanowire Arrays ◽  
Etching Technique ◽  
Inductively Coupled ◽  
Solar Blind ◽  
Vertically Aligned

AbstractVertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

scholarly journals Vertically Aligned CsPbBr3 Nanowire Arrays with Template-Induced Crystal Phase Transition and Stability

2021 ◽  
Vol 125 (8) ◽  
pp. 4860-4868
Author(s):  
Zhaojun Zhang ◽  
Klara Suchan ◽  
Jun Li ◽  
Crispin Hetherington ◽  
Alexander Kiligaridis ◽  
...  
Keyword(s):  
Phase Transition ◽  
Nanowire Arrays ◽  
Crystal Phase ◽  
Vertically Aligned ◽  
Crystal Phase Transition
Sign in / Sign up

Export Citation Format

Share Document