Reliability and Degradation Mechanisms in High Power Broad-Area InGaAs-AlGaAs Strained Quantum Well Lasers

2015 ◽  
Vol 1792 ◽  
Author(s):  
Yongkun Sin ◽  
Nathan Presser ◽  
Stephen LaLumondiere ◽  
Miles Brodie ◽  
Zachary Lingley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Communication Systems ◽  
Satellite Communication ◽  
High Reliability ◽  
Single Mode ◽  
Broad Area ◽  
Intensive Investigation ◽  
Strained Quantum Well ◽  
Field Reliability

ABSTRACTReliability and degradation processes in broad-area InGaAs-AlGaAs strained quantum well (QW) lasers are under intensive investigation because these lasers are the key components for fiber lasers and amplifiers that have found both industrial and military applications in recent years. Unlike single-mode lasers that were developed for high reliability telecom applications, broad-area lasers were mainly targeted for applications that require less stringent reliability of the lasers until recently. Especially, the lack of field reliability data is a concern for satellite communication systems where high reliability is required of lasers for long-term duration. For our present study, we addressed this concern by performing long-term life-tests of broad-area InGaAs-AlGaAs strained QW lasers and also by studying mechanisms that are responsible for catastrophic degradation of the lasers.

A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers

2009 ◽  
Vol 1195 ◽  
Author(s):  
Yongkun Sin ◽  
Nathan Presser ◽  
Neil Ives ◽  
Steven C. Moss
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Deep Level ◽  
Quantum Well Lasers ◽  
Broad Area ◽  
Dark Line ◽  
Time Resolved ◽  
Transient Spectroscopy ◽  
Strained Quantum Well ◽  
Broad Area Lasers

AbstractDegradation processes in high power broad-area InGaAs-AlGaAs strained quantum well lasers were studied using electron beam-induced current (EBIC) techniques, time-resolved electroluminescence (TR-EL) techniques, and deep-level transient spectroscopy (DLTS). Accelerated lifetests of the broad-area lasers yielded catastrophic failures at the front facet and also in the bulk. EBIC was employed to study dark line defects generated in degraded lasers stressed under different test conditions. TR-EL was employed to study the intra-cavity intensity distribution in real time as devices were aged. DLTS was employed to study deep electron traps in both pristine and degraded laser diodes. Lastly, we present a possible scenario for the initiation of bulk degradation in the broad-area lasers.

EFFECT OF PSEUDOMORPHIC MULTIPLE QUANTUM WELL LAYERS ON CHARACTERISTICS OF UNCOOLED ELECTROLUMINESCENT DIODE

2009 ◽  
Vol 23 (32) ◽  
pp. 5859-5865
Author(s):  
JAE-HO HAN ◽  
ZAIL LHEE ◽  
SUNG-WOONG PARK
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Communication Systems ◽  
Multiple Quantum Well ◽  
Threshold Current ◽  
Semiconductor Diode ◽  
Multiple Quantum ◽  
Growth Step ◽  
Semiconductor Diode Laser ◽  
Strained Quantum Well

We have fabricated and characterized the uncooled light emitting device having a pseudomorphic structure of multiple quantum wells. The effect of numbers of compressively strained quantum well layers on the semiconductor diode laser characteristics was experimentally demonstrated, depending on room and high temperatures. In addition to the automatically embedded absorptive grating which can reduce the epitaxial growth step, the laser performance can be optimized for both threshold current and differential slope efficiency when the quantum well numbers are reduced to five layers for optical communication systems.

Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers

1986 ◽  
Vol 49 (14) ◽  
pp. 883-885 ◽  
Author(s):  
D. G. Deppe ◽  
G. S. Jackson ◽  
N. Holonyak ◽  
D. C. Hall ◽  
R. D. Burnham ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Mode ◽  
Quantum Well Lasers ◽  
Broad Area
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