Morphology of Tantalum Nitride Thin Films Grown on Fused Quartz by Reactive High Power Impulse Magnetron Sputtering (HiPIMS)

2015 ◽  
Vol 1803 ◽  
Author(s):  
D. O. Thorsteinsson ◽  
T. K. Tryggvason ◽  
J. T. Gudmundsson
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
X Ray ◽  
Fused Quartz ◽  
The Magnetic Field ◽  
Dense Films

ABSTRACTThin tantalum nitride films were grown on fused quartz by reactive high power impulse magnetron sputtering (HiPIMS) while varying the fractional N2 flow rate at fixed substrate temperature of 400°C. The film properties were compared to films grown by conventional dc magnetron sputtering (dcMS) at similar conditions. Structural characterization was carried out using X-ray diffraction and reflection methods. The HiPIMS process produces slightly less dense films than does dcMS and the surface roughness is similar for both the HiPIMS and dcMS grown films. The deposition rate for HiPIMS is up to 80 % lower than for dcMS but it can be roughly doubled by lowering the magnetic field strength by 30 %.

DEPOSITION OF TiAlV THIN FILMS BY PULSED LASER AND DC MAGNETRON SPUTTERING: STRUCTURAL, COMPOSITIONAL AND ELECTROCHEMICAL CORROSION STUDY

2019 ◽  
Vol 27 (08) ◽  
pp. 1950188
Author(s):  
A. ALKHAWWAM ◽  
B. ABDALLAH ◽  
A. K. JAZMATI ◽  
M. TOOTANJI ◽  
F. LAHLAH
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Corrosion Test ◽  
Pulsed Laser ◽  
Electrochemical Corrosion ◽  
Target Material ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
X Ray

In this work, TiAlV thin films have been prepared on two different types of substrates: silicon and stainless steel (SS304) by two deposition methods: Pulsed Laser Deposition (PLD) and DC magnetron sputtering. Different techniques have been employed in order to characterize film properties such as: Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-ray (EDX), X-ray diffraction (XRD), microhardness and corrosion test. EDX analysis showed that the deposited films are slightly different from that of the target material Ti6Al4V alloy. The measured microhardness values are about 11.7[Formula: see text]GPa and 4.7[Formula: see text]GPa for films prepared by PLD and DC magnetron sputtering, respectively. Corrosion test indicated that the corrosion resistance of the two TiAlV films deposited on SS304 substrates in (0.9% NaCl) physiological normal saline medium was significantly improved compared with the SS304 substrates. These attractive results could permit applications of our films in the medical implants fabrication.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

The Study of Al-N Codoped ZnO Thin Films Prepared by DC Magnetron Sputtering

2015 ◽  
Vol 754-755 ◽  
pp. 591-594
Author(s):  
Haslinda Abdul Hamid ◽  
M.N. Abdul Hadi
Keyword(s):  
Magnetron Sputtering ◽  
Structural Investigation ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oxygen Gas ◽  
Film Roughness

The codoped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200 °C and 600 °C for 1 hour in nitrogen and oxygen gas mixture. Structural investigation was carried out by scanning electron microscopy (SEM), atomic force microscopy and x-ray diffraction (XRD). Film roughness and grain shape were found to be correlated with the annealing temperatures.

Multilayer Coatings for Focusing Hard X-ray Telescopes

1998 ◽  
Vol 551 ◽  
Author(s):  
A. Ivan ◽  
R. Bruni ◽  
K. Byun ◽  
J. Everett ◽  
P. Gorenstein ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Single Layer ◽  
Multilayer Coatings ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Auger Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Specular Reflectivity

AbstractSeveral multilayer test coatings for hard X-ray telescopes were fabricated using DC magnetron sputtering. The process parameters were selected from a series of trials of single layer depositions. The samples were characterized using X-ray specular reflectivity scans, AFM, and cross-sectional TEM. Additional measurements (stylus profilometry, RBS, and Auger analysis) were used in the optimization of the deposition rate and of the thin film properties (density, composition, surface/interface microroughness). The X-ray reflectivity scans showed that the combinations of reflector and spacer materials tested so far (W/Si and W/C) are suited for graded d-spacing multilayer coatings that present a constant reflectivity bandpass up to 70 keV.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

scholarly journals Room-Temperature Formation of Hard BCx Films by Low Power Magnetron Sputtering

2021 ◽  
Vol 11 (21) ◽  
pp. 9896
Author(s):  
Veronica Sulyaeva ◽  
Maxim Khomyakov ◽  
Marina Kosinova
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Sputtering Power ◽  
Chemical States ◽  
Rf Signal ◽  
Dual Target

Boron carbide is one of the most important non-metallic materials. Amorphous BCx films were synthesized at room temperature by single- and dual-target magnetron sputtering processes. A B4C target and C target were operated using an RF signal and a DC signal, respectively. The effect of using single- and dual-target deposition and process parameters on the chemical bonding and composition of the films as well as their functional properties were characterized by Fourier transform infrared spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray energy dispersive analysis, X-ray diffraction, ellipsometry, and spectrophotometry. It was found that the film properties depend on the sputtering power and the used targets. EDX data show that the composition of the samples varied from B2C to practically BC2 in the case of using an additional C target. According to the XPS data, it corresponds to the different chemical states of the boron atom. A nanoindentation study showed that the film with a composition close to B2C deposited with the highest B4C target power reached a hardness of 25 GPa and Young’s modulus of 230 GPa. The optical properties of the films also depend on the composition, so the band gap (Eg) of the BCx film varied in the range of 2.1–2.8 eV, while the Eg of the carbon-rich films decreased to 1.1 eV.

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

2022 ◽  
Vol 1048 ◽  
pp. 158-163
Author(s):  
Mekala Lavanya ◽  
Srirangam Sunita Ratnam ◽  
Thota Subba Rao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Visible Region ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Glass Substrates ◽  
Gas Flow Ratio

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

2010 ◽  
Vol 663-665 ◽  
pp. 1041-1044
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Co Doped

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

Deposition And Characterization of CNx Films

1994 ◽  
Vol 339 ◽  
Author(s):  
X. T. Cui ◽  
Z. H. Zhang ◽  
Q. Y. Chen ◽  
F. Romero-Borja ◽  
J. R. Liu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Ir Spectroscopy ◽  
Magnetron Sputtering ◽  
Annealing Effect ◽  
Single Bond ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Bonding Properties

ABSTRACTCNx films with x around 1.0 have been made by inverted cylindrical DC magnetron sputtering. RBS, XPS, IR spectroscopy, ERD and SEM were used to characterize the composition and bonding properties of the films, while X-ray diffraction was used for crystal structure determination. XPS data indicated the existence of the tetrahedral C3N4 phase in the CNx films, which was consistent with the C-N single bond suggested by IR spectra. The annealing effect on CNx films will also be discussed.

DC Magnetron Sputtering of B2 Phase Feal(111) Single-Crystal-Like Films and Hydrogen Damage Behavior

2013 ◽  
Vol 853 ◽  
pp. 131-134
Author(s):  
Tao Tang ◽  
Yi Liu ◽  
Qun Li ◽  
Jiang Li Cao ◽  
Yu Zhe Liu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Single Crystal ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Tem Analysis ◽  
X Ray ◽  
Hydrogen Damage ◽  
Atomic Force ◽  
Transmission Electron ◽  
B2 Phase

B2 ordered FeAl intermetallic is an important candidate for high-temperaturestructural materials, and its hydrogen embrittlement problem has attracted wide attentions in recent decades. In this paper, we prepared single-crystal-like B2-FeAl (111) thin films on Si (111) substrate using the conventional magnetron sputtering method, and studied the phase composition and the influences of hydrogen on FeAl (111) films by X-ray diffraction (XRD), scanning electron microscopy (SEM), Atomic force microscope (AFM) and transmission electron microscope (TEM) analysis. The preffered growth mechanism of FeAl (111) film and its hydrogen induced modification were discussed.

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