Effect of Li-doping on Photoluminescence of Screen-printed Zinc Oxide Films

2015 ◽  
Vol 1766 ◽  
pp. 167-177 ◽  
Author(s):  
L. Khomenkova ◽  
V. Kushnirenko ◽  
M. Osipenok ◽  
K. Avramenko ◽  
Y. Polishchuk ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Li Doping ◽  
Grain Sizes ◽  
Zinc Oxide Films ◽  
Atomic Force ◽  
Reduced Density ◽  
Film Conductivity

ABSTRACTUndoped and Li-doped ZnO films were fabricated by screen printing approach on sapphire substrate. The effect of Li doping and annealing temperature on the luminescent, optical, electrical and structural properties of the films has been investigated by the photoluminescence (PL), Raman scattering, conductivity, Atomic Force microscopy and X-ray diffraction (XRD) methods. The XRD study revealed that the films have polycrystalline wurtzite structure with grain sizes ranging from 26 to 38 nm. In the undoped ZnO films, the increase of annealing temperature from 800 to 1000 °C resulted in the increase of the grain sizes, film conductivity and the intensity of the ultraviolet PL. The introduction of Li of low concentration of 0.003 wt % at 800 °C or 900 °C allows producing the low-resistive films with enhanced ultraviolet PL and reduced density of crystalline defects. Highly doped films (with 0.3 wt % of Li) were found to be semi-insulating with deteriorated PL properties irrespectively of the annealing temperature. It is shown that introduction of Li in the ZnO films affects their PL spectra mainly via the evolution of the film crystallinity and the density of intrinsic defects.

scholarly journals Highly c-axis Oriented ZnO Thin Films by Sol-gel Method

2021 ◽  
Author(s):  
Taner Kutlu ◽  
Necdet H. Erdogan ◽  
Nazmi Sedefoglu ◽  
Hamide Kavak
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Optical Measurement ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Coating Method

Abstract This study reports the effect of annealing temperature on the structural, morphological, and optical properties of ZnO (Zinc Oxide) thin films deposited on a glass substrate by the sol-gel spin coating method. Those properties of ZnO were examined with UV-Vis, Fourier transform infrared (FTIR) and Raman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and X-ray diffraction (XRD), before and after annealing. XRD results revealed that all the samples had a highly c-axis oriented wurtzite structure. A 1 (LO) mode in Raman spectra also confirmed the highly oriented ZnO films. Optical measurement indicated that transmittance of the films was above %85, and the optical band gap slightly decreased with the increasing annealing temperature from 350 to 550 °C. Morphological analysis displayed that increasing annealing temperature improved surface morphology and enlarged the grain size from 2-3 nm for as-deposited samples to 150 nm for annealed at 550 °C.

Influence of Post Annealing Temperature on the Properties of ZnO Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 576 ◽  
pp. 602-606
Author(s):  
Samsiah Ahmad ◽  
N.D.M. Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Current Voltage ◽  
Post Annealing Temperature

Zinc Oxide (ZnO) films were prepared on unheated glass substrate by radio frequency (RF) magnetron sputtering technique and post deposition annealing of the ZnO thin film were performed at 350, 400, 450 and 500°C. Post annealing temperature was found to improve the structural and electrical characteristics of the deposited films. The structural properties of the films were carried out by the surface profiler, X-Ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) while the electrical properties were measured using current voltage (I-V) probe measurement system. All samples exhibit the (002) peak and the sample annealed at 500°C gives the highest crystalline quality, highest Rms roughness (1.819 nm) and highest electrical conductivity (3.28 x 10-3 Sm-1).

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

Morphology and orientation of thin poly(3-hexylthiophene) (P3HT) films on differently silanized silicon oxide

e-Polymers ◽  
2009 ◽  
Vol 9 (1) ◽  
Author(s):  
Guido Scavia ◽  
William Porzio ◽  
Silvia Destri ◽  
Alberto Giacometti Schieroni ◽  
Fabio Bertini
Keyword(s):  
Annealing Temperature ◽  
Silicon Oxide ◽  
Alkyl Chain ◽  
Alkyl Chain Length ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Techniques

AbstractThe morphology and structure of the overlying poly(3-hexylthiophene) (P3HT) layer onto differently silanized silicon oxide has been studied by Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD) techniques. By increasing the silanizer alkyl chain length, the layer morphology evolves from a filament like to globular needle like as a consequence of the different SAM organization, while the P3HT conformation remains edge-on. For each case the effect of the annealing temperature has been studied. For all the cases a particular attention has been paid to the first thin layers close to the interface P3HT/SiOx. The effect of a polar substituent and presence of aromatic ring has been also studied.

HETERO-GROWTH OF (100) ORIENTATED ZNO FILMS ON SILICON BY SS-CVD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4250-4254 ◽  
Author(s):  
JIAN-GUO LU ◽  
ZHI-ZHEN YE ◽  
HAN-HONG CHEN ◽  
JING-YUN HUANG ◽  
BING-HUI ZHAO
Keyword(s):  
Texture Coefficient ◽  
Zinc Acetate Dihydrate ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Lower Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
First Time ◽  
Lower Growth Temperature

ZnO films with (100) preferred orientation are reported for the first time. ZnO films were synthesized on Si(100) substrate by solid-source chemical vapor deposition (SS-CVD) using zinc acetate dihydrate (solid) as a precursor. The structural properties were investigated by X-ray diffraction and atomic force microscopy. Results show that a lower growth temperature and a higher deposition rate will facilitate the formation of (100) texture. The texture coefficient for (100) plane is 3.28.

Growth of (0001) ZnO Thin Films on Sapphire

1996 ◽  
Vol 449 ◽  
Author(s):  
A. J. Drehman ◽  
P. W. Yip
Keyword(s):  
Surface Roughness ◽  
Buffer Layers ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force

ABSTRACTUsing reactive rf sputtering, we have grown (0001) oriented ZnO films in situ on heated c-axis sapphire substrates, that are promising, particularly in terms of surface roughness, as buffer layers for the subsequent epitaxial growth of III-V nitride films. We compare the effects of on-axis and off-axis sputter geometries on the film epitaxy and smoothness. We also examined the effect of substrate temperature on the growth and smoothness and quality of the film. X-ray diffraction was used to verify the hexagonal ZnO phase, its c-axis orientation and, qualitatively, the degree of its epitaxy. Atomic Force Microscopy (AFM) was used to determine the ZnO growth morphology and roughness. Our best films, obtained by off-axis sputter deposition, have a surface roughness of less than 1 nm.

scholarly journals A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
C. Sedrati ◽  
A. Bouabellou ◽  
A. Kabir ◽  
R. Haddad ◽  
M. Boudissa ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sheet Resistance Measurement ◽  
Cobalt Silicides

AbstractIn this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

Preparation and Characterization of CuO Nanoparticles Prepared by Chemical Method

2021 ◽  
Vol 1021 ◽  
pp. 68-77
Author(s):  
Rashed T. Rasheed ◽  
Liblab S. Jassim ◽  
Hamsa A. Easa ◽  
Shaymaa H. Khazaal
Keyword(s):  
Annealing Temperature ◽  
Energy Gap ◽  
Copper Chloride ◽  
Sol Gel ◽  
Ammonium Hydroxide ◽  
Cuo Nanoparticles ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Temperatures

Copper oxide (CuO) nanoparticles were prepared by the sol-gel method, by the reaction of copper chloride and ammonium hydroxide as procurers. Nanopowders are annealing at different temperatures (100 °C, 200 °C, and 600 °C) for 120 min and confirmed the monoclinic phase by X-ray diffraction analysis of the metal oxide with lattice parameters a = 4.694 Å, b = 3.456 Å and c = 5.165Å for annealing temperature 400°C. Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR), and UV-Visible Spectroscopy spectrum was used to determine the structure, average crystallize, and morphology. We found increasing in size and energy gap (Eg) from (62.95 nm to 106.84 nm) and from (1.72 eV to 1.49 eV), when annealing temperature increasing from 200 °C to 600 °C, respectively.

Fabrication and Characterization of ZnFe2O4 Thin Film Based Metal-Insulator-Semiconductor Capacitors

2015 ◽  
Vol 50 ◽  
pp. 151-158
Author(s):  
M. Vishwas ◽  
K. Narasimha Rao ◽  
Ashok M. Raichur
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
Signal Frequency ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Force Microscopy ◽  
Atomic Force

Thin films of zinc ferrite (ZnFe2O4) were deposited on glass, quartz and p-silicon (100) substrates by the sol-gel method. The structural properties of the films were studied using x-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The XRD data show the film having a spinel structure and the crystalline phase exists after annealing at 500°C for 2 h in air. The SEM and AFM images show the nanocrystalline nature of the films. The optical transmittance decreased with increase of annealing temperature. The optical band gap energy was estimated at different annealing temperatures and found to be 2.71 eV after annealing at 400°C. The metal-insulator-semiconductor (MIS) capacitors were fabricated using ZnFe2O4 films on p-silicon (100) substrates. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied. The dependence of dielectric constant on annealing temperature and signal frequency was analyzed. The variation of current density and resistivity of the ZnFe2O4 films with annealing temperature was also explored.

Investigations of ZnO Nanorod Films Grown by Hydrothermal Method for Ethanol Gas Sensor

2020 ◽  
Vol 19 (03) ◽  
pp. 1950022
Author(s):  
S. Jainulabdeen ◽  
C. Gopinathan ◽  
A. Mumtaz Parveen ◽  
K. Mahalakshmi ◽  
K. Jeyadheepan ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Grazing Incidence ◽  
Growth Time ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ethanol Sensing ◽  
Zno Rods

Rod-structured ZnO has grown hydrothermally on the seed layer by varying growth time. The growth mechanism of rod-structured ZnO thin films is studied extensively with the help of characterizing tools. The preferred orientation and c/a ratio are studied with Grazing Incidence X-ray diffraction (GIXRD). The growth mechanism of ZnO rod structure is studied in detailed manner with Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The optical absorption and emission properties of ZnO rods are studied with respect to growth morphology. Ethanol sensing measurements are carried out at room temperature (RT). The nanostructured ZnO films show good response and sensitivity to ethanol gas at RT.

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