Fabrication of p-i-n solar cells utilizing ZnInON by RF magnetron sputtering

2015 ◽  
Vol 1741 ◽  
Author(s):  
Koichi Matsushima ◽  
Ryota Shimizu ◽  
Tomoaki Ide ◽  
Daisuke Yamashita ◽  
Hyunwoong Seo ◽  
...  

ABSTRACTWe succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnInON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnInON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnInON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

Energies ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 4
Author(s):  
Dwinanri Egyna ◽  
Kazuyoshi Nakada ◽  
Akira Yamada

Despite the potential in single- and multi-junction solar cells application, research into the wide band gap CuIn1−xGax(Se1−ySy)2 or CIG(SSe)2 solar cell material, with Eg≥1.5eV, has yet to be extensively performed to date. In this work, we conducted a numerical study into the role of the n-type layers in CIG(SSe)2 heterojunction solar cells, specifically concerning the maximum open-circuit voltage of the devices. In the first part of the study, we derived a new ideal open-circuit voltage equation for a thin-film heterojunction solar cell by taking into account the current contribution from the depletion region. The accuracy of the new equation was validated through a simulation model in the second part of the study. Another simulation model was also used to clarify the design rules of the n-type layer in a wide band gap CIG(SSe)2 solar cell. Our work stressed the importance of a positive conduction band offset on the n-/p-type interface, through the use of a low electron affinity n-type material for a solar cell with a high open-circuit voltage . Through a precise selection of the window layer material, a buffer-free CIG(SSe)2 design is sufficient to fulfill such conditions. We also proposed the specific roles of the n-type layer, i.e., as a passivation layer and selective electron contact, in the operation of CIGS2 solar cells.


2017 ◽  
Vol 25 (9) ◽  
pp. 755-763 ◽  
Author(s):  
Fredrik Larsson ◽  
Nina Shariati Nilsson ◽  
Jan Keller ◽  
Christopher Frisk ◽  
Volodymyr Kosyak ◽  
...  

2018 ◽  
Vol 10 (26) ◽  
pp. 22074-22082 ◽  
Author(s):  
Dhruba B. Khadka ◽  
Yasuhiro Shirai ◽  
Masatoshi Yanagida ◽  
Takeshi Noda ◽  
Kenjiro Miyano

Author(s):  
Yong Zhao ◽  
Yu Lu ◽  
Yonghai Li ◽  
Xiao Kang ◽  
Xichang Bao ◽  
...  

Most polymer donors developed so far for high-performance non-fullerene OSCs are designed in planar molecular geometries containing BDT units. In this work, two D−A conjugated polymers with wide band gap,...


2017 ◽  
Vol 10 (6) ◽  
pp. 1443-1455 ◽  
Author(s):  
Seo-Jin Ko ◽  
Quoc Viet Hoang ◽  
Chang Eun Song ◽  
Mohammad Afsar Uddin ◽  
Eunhee Lim ◽  
...  

A new series of wide band gap photovoltaic polymers based on a fluorinated phenylene-alkoxybenzothiadiazole unit with an optical band gap of over 1.90 eV are designed and utilized for high-performance single- and multi-junction bulk heterojunction polymer solar cells.


2018 ◽  
Vol 6 (16) ◽  
pp. 6874-6881 ◽  
Author(s):  
Zhenghui Luo ◽  
Guanghao Li ◽  
Wei Gao ◽  
Kailong Wu ◽  
Zhi-Guo Zhang ◽  
...  

A new nonfullerene electron acceptor of m-MeIC was designed and synthesized, which is effective with different band-gap polymer donors, including wide band-gap J71, medium band-gap PBDB-T and low band-gap PCE-10.


2018 ◽  
Vol 10 (27) ◽  
pp. 23235-23246 ◽  
Author(s):  
Jie Yang ◽  
Mohammad Afsar Uddin ◽  
Yumin Tang ◽  
Yulun Wang ◽  
Yang Wang ◽  
...  

2017 ◽  
Vol 5 (2) ◽  
pp. 712-719 ◽  
Author(s):  
Woosung Lee ◽  
Jae Woong Jung

A novel wide band gap polymer (PIDTT-TT) has been synthesized to use in efficient polymer solar cells with power conversion efficiencies up to 7.10%.


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