XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics
Keyword(s):
X Ray
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ABSTRACTWe studied GeTe structures in topological switching random access memories (TRAMs) with a [GeTe/Sb2Te3] superlattice by using X-ray diffraction (XRD) analysis. We examined the electrical characteristics of the TRAMs deposited at different temperatures. We found that XRD spectra differed between the films deposited at 200 and 240°C and that the differences corresponded to the differences in the GeTe sequences in the films.