Chemical and Crystal Characterization of the Oxide Film Formed in 304L SS Under Autoclave Conditions, With and Without Crevice Formation

2015 ◽  
Vol 1769 ◽  
Author(s):  
Ángeles Díaz Sánchez ◽  
Aida Contreras Ramírez ◽  
Carlos Arganis Juárez
Keyword(s):  
Oxide Film ◽  
Nuclear Industry ◽  
Film Rupture ◽  
Active Dissolution ◽  
Dissolution Model ◽  
Mechanism And Kinetics ◽  
The Difference ◽  
Crystal Characterization ◽  
Kinetics Of

ABSTRACTThe principles of Stress Corrosion Cracking (SCC) are supported in the behavior of the oxide film formed into a crack; in fact the active dissolution of metal atoms after a film rupture and until fill repassivation is the base of slip dissolution model which is a good model to justified the crack tip advance in stainless steels (SS) used in vessel internal components for the nuclear industry. This paper shows the analyzed made at the oxide film formed on samples of 304L SS sensitized and non sensitized, under autoclave conditions (288°C, 8MPa) with and without crevice geometric formation, using SEM, XRD and Raman Spectra.The crevice and no crevice condition allow establish the difference of an oxide formed on a free surface (no crevice) and the oxide formed on the wall in a crack (crevice); the chemical and physical properties of oxide film can alter the mechanism and kinetics of SCC process, so the difference between these two conditions will give more information about the behavior of the oxide film.

Mechanism and kinetics of thin zirconium and hafnium oxide film growth in an ALD reactor

2004 ◽  
Vol 549 (1) ◽  
pp. 67-86 ◽  
Author(s):  
Maxim Deminsky ◽  
Andrei Knizhnik ◽  
Ivan Belov ◽  
Stanislav Umanskii ◽  
Elena Rykova ◽  
...  
Keyword(s):  
Oxide Film ◽  
Hafnium Oxide ◽  
Film Growth ◽  
Mechanism And Kinetics ◽  
Kinetics Of

New Thermostable Systems: 1. Mechanism and Kinetics of Polycondensation and Characterization of Fluoro-Nadimide End-Capped Oligomers

1999 ◽  
Vol 11 (2) ◽  
pp. 235-254 ◽  
Author(s):  
Marie Florence Grenier Loustalot ◽  
Laurent Billon ◽  
Bernard Sillion
Keyword(s):  
Mechanism And Kinetics ◽  
Kinetics Of

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Analisis Karakterisasi Teknologi Direct Sequence Spread Spectrum Dan Frequency Hopping Spread Spectrum

2019 ◽  
Vol 2 (2) ◽  
pp. 129-138
Author(s):  
Fawzan Galib Abdul Karim Bawahab ◽  
Elvan Yuniarti ◽  
Edi Kurniawan
Keyword(s):  
Spread Spectrum ◽  
Communication Systems ◽  
Multiple Access ◽  
Frequency Hopping ◽  
Direct Sequence Spread Spectrum ◽  
Direct Sequence ◽  
Frequency Hopping Spread Spectrum ◽  
Two Systems ◽  
The Difference

Abstrak. Pada penelitian ini, telah dilakukan analisa karakterisasi pada teknologi Direct Sequence Spread Spectrum dan Frequency Hopping Spread Spectrum, sebagai salah satu teknik multiple-access pada sistem komunikasi. Karakterisasi dilakukan untuk mencari bagaimana cara meningkatkan keoptimalan kedua sistem tersebut, dalam mengatasi masalah interferensi dengan sistem dan channel yang sama. Dan juga untuk menentukan veriabel apa yang mempengaruhi keoptimalan kedua sistem tersebut. Karakterisasi dilakukan dengan menentukan variabel-variabel yang mempengaruhi keoptimalan keduanya. Hasil dari karakterisasi, diketahui variabel-variabel yang mempengaruhi kemampuan sistem DSSS yaitu nilai frekuensi spreading (). Sedangkan untuk sistem FHSS yaitu nilai frekuensi spreading ( dan ) dan selisih antara frekuensi hopping data dengan frekuensi hopping interferensi . Kata Kunci: BER, DSSS, FHSS, Interference, Spread spectrum. Abstract. In this study, characterization of Direct Sequence Spread Spectrum and Frequency Hopping Spread Spectrum technologies have been done, as one of the multiple-access techniques in communication systems. Characterization is done to find out how to improve the ability of the two systems, in solving interference problems with the same system and channel. And also to determine what veriabel affects the ability of the two systems. Characterization is done by determining the variables that affect the ability of both. The results of the characterization, known variables that affect the ability of the DSSS system are the spreading frequency value (). As for the FHSS system, the spreading frequency value ( and ) and the difference between frequency hopping data with frequency hopping interference .

Oil extraction from the sunflower seeds, mechanism and kinetics of the process

2020 ◽  
Vol 3 (1) ◽  
pp. 155-160
Author(s):  
Ye. M. Semenyshyn ◽  
◽  
V. M. Atamanyuk ◽  
O. Ya. Dobrovetska ◽  
T. I. Rymar ◽  
...  
Keyword(s):  
Oil Extraction ◽  
Sunflower Seeds ◽  
Mechanism And Kinetics ◽  
Kinetics Of

Surface Microstructure Evolution Upon Silicidation of Ni(Pt) and the Different Responses to Metal Etch

2013 ◽  
Author(s):  
Wentao Qin ◽  
Dorai Iyer ◽  
Jim Morgan ◽  
Carroll Casteel ◽  
Robert Watkins ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxide Film ◽  
Microstructure Evolution ◽  
Depth Profiling ◽  
Surface Microstructure ◽  
The Difference ◽  
Surface Microstructures ◽  
Pt Films

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.

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