Electrical Characterization of Polyaniline-ZnO nano-composite Langmuir-Blodgett thin films by Conductive Atomic Force Microscopy

2014 ◽  
Vol 1668 ◽  
Author(s):  
Gurpreet Kaur Bhullar ◽  
Ramneek Kaur ◽  
K. K. Raina
Keyword(s):  
Atomic Force Microscopy ◽  
Zinc Oxide ◽  
Composite Material ◽  
Nano Particles ◽  
Conductive Atomic Force Microscopy ◽  
Nano Composite ◽  
Force Microscopy ◽  
Langmuir Blodgett ◽  
Lb Film ◽  
Atomic Force

ABSTRACTPolyaniline–Zinc oxide nano-composite material was prepared by chemical polymerization of aniline with ZnO nano-particles doping. Surface Pressure-Area (π-A) isotherms of Polyaniline (PANi) and Polyaniline–Zinc oxide nano-composite shows phase transformations of monolayer during compression process. Multiple isotherms indicate that the monolayer of the composite material can retain its configuration during compression-expansion cycles. The structural, topographical and electrical properties of these deposited Langmuir Blodgett films were studied and characterized by UV-Visible spectroscopy (UV), Atomic force microscopy (AFM), Conductive Atomic force microscopy (C-AFM) respectively. For detailed investigations of the LB film properties, Conductive AFM is used to measure the I-V relationship of a surface of Langmuir Blodgett (LB) films of Polyaniline and Polyaniline–Zinc oxide nano-composite. The contact size of the AFM cantilever tip can be as small as a few nanometers, so, the local variation of the electrical property, which is unseen in the macroscopic level, can be observed by the I-V curve. A current ranging up to 3 nA and 20 nA have been observed in the case of PANi and PANi-ZnO nano-composite LB film, respectively. Conductive data images of the ITO substrate, PANi and PANi-ZnO nano-composite LB film on the ITO substrate obtained with an applied bias voltage of 4V showed that the distribution of current on the whole surface is almost uniform and very less inhomogeneities have been observed in the surface conductance of the PANi and PANi-ZnO nano-composite LB film.

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

Phase Transitions in Phospholipid Monolayers Studied by Atomic Force Microscopy and Langmuir-Blodgett Technique

2008 ◽  
Vol 59 (11) ◽  
Author(s):  
Maria Tomoaia-Cotisel ◽  
Aurora Mocanu
Keyword(s):  
Atomic Force Microscopy ◽  
Lipid Membrane ◽  
Phase Behaviour ◽  
Membrane Interface ◽  
Force Microscopy ◽  
Langmuir Blodgett ◽  
Atomic Force ◽  
Phospholipid Monolayers ◽  
Air Water Interface ◽  
Condensed Liquid

The phase behaviour and surface structure of dipalmitoyl phosphatidyl choline (DPPC) monolayers at the air/water interface, in the absence and the presence of procaine, have been investigated by Langmuir-Blodgett (LB) technique and atomic force microscopy. The LB films were transferred on mica, at a controlled surface pressure, characteristic for the expanded liquid to condensed liquid phase transition of pure DPPC monolayers. The results indicate that procaine penetrates into and specifically interacts with phospholipid monolayers stabilizing the lipid membrane interface.

Imaging and nanoprobing of graphene layers for interconnects by conductive atomic force microscopy

2015 ◽  
Vol 54 (5S) ◽  
pp. 05EB02 ◽  
Author(s):  
Li Zhang ◽  
Masayuki Katagiri ◽  
Taishi Ishikura ◽  
Makoto Wada ◽  
Hisao Miyazaki ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Atomic Force

Switching of nanosized filaments in NiO by conductive atomic force microscopy

2012 ◽  
Vol 112 (6) ◽  
pp. 064310 ◽  
Author(s):  
F. Nardi ◽  
D. Deleruyelle ◽  
S. Spiga ◽  
C. Muller ◽  
B. Bouteille ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force
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