Direct Heteroarylation Polymerization of Low Bandgap Thiophene-Based Conjugated Polymers

2014 ◽  
Vol 1668 ◽  
Author(s):  
Jiyeon Yoon ◽  
Se Hyun Jang ◽  
Sang Yong Kim ◽  
Sun Jae Kwon ◽  
Jing Guo ◽  
...  

ABSTRACTDirect heteroarylation polymerization was employed to synthesize a novel low bandgap polymer, used as a p-type material of polymer photovoltaic cells. To achieve low bandgap of conjugated polymers, electron donor-acceptor (D-A) alternating strategy was used. The electron-donating 3-alkylthiophene and electron-withdrawing cyanothiophene were coupled to be polymerized via direct heteroarylation polymerization. The cyano moiety of the polymer backbone allowed a strong intermolecular interaction between neighboring chains and improved the structural perfection of the crystal structure on the substrate. The solar cell devices of ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al were fabricated on ITO-coated glass substrate.

2018 ◽  
Vol 6 (15) ◽  
pp. 4030-4040 ◽  
Author(s):  
Benedetta M. Squeo ◽  
Vasilis G. Gregoriou ◽  
Yang Han ◽  
Alex Palma-Cando ◽  
Sybille Allard ◽  
...  

Development of new ultra low bandgap (Eoptg < 1 eV) π-conjugated D–A polymers consisting of α,β-unsubstituted meso-positioning thienyl BODIPY.


2021 ◽  
Author(s):  
Qi Zhang ◽  
Hengda Sun ◽  
Meifang Zhu

Abstract Organic thermoelectric (OTE) materials have been regarded as a potential candidate to harvest waste heat from complex, low temperature surfaces of objects and convert it into electricity. Recently, n-type conjugated polymers as organic thermoelectric materials have aroused intensive research in order to improve their performance to match up with their p-type counterpart. In this review, we discuss aspects that affect the performance of n-type OTEs, and further focus on the effect of planarity of backbone on doping efficiency and eventually the TE performance. We then summarize strategies such as implementing rigid n-type polymer backbone or modifying conventional polymer building blocks for more planar conformation. In the outlook part, we conclude forementioned devotions and point out new possibility that may promote the future development of this field.


Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2068 ◽  
Author(s):  
Yusuke Yabara ◽  
Seiichiro Izawa ◽  
Masahiro Hiramoto

In this study, the operation of donor/acceptor photovoltaic cells fabricated on homoepitaxially grown p-doped rubrene single-crystal substrates is demonstrated. The photocurrent density is dominated by the sheet conductivity (σ□) of the p-type single-crystal layer doped to 100 ppm with an iron chloride (Fe2Cl6) acceptor. A 65 μm thick p-type rubrene single-crystal substrate is expected to be required for a photocurrent density of 20 mA·cm−2. An entire bulk doping technique for rubrene single crystals is indispensable for the fabrication of practical organic single-crystal solar cells.


2017 ◽  
Vol 1 (3) ◽  
pp. 499-506 ◽  
Author(s):  
Liqian Liu ◽  
Guichuan Zhang ◽  
Baitian He ◽  
Shengjian Liu ◽  
Chunhui Duan ◽  
...  

Three novel conjugated polymers based on 2,3,8,9-tetrakis(3-(alkoxy)phenyl)-6,12-di(thiophen-2-yl)-2,3,8,9-tetrahydroquinoxalino[6,5-f]quinoxaline (DTNQx) were designed and synthesized, and were applied in photovoltaic cells.


2013 ◽  
Vol 51 (9) ◽  
pp. 1933-1941 ◽  
Author(s):  
Sevki Can Cevher ◽  
Naime Akbasoglu Unlu ◽  
Ali Can Ozelcaglayan ◽  
Dogukan Hazar Apaydin ◽  
Yasemin Arslan Udum ◽  
...  

2012 ◽  
Vol 45 (3) ◽  
pp. 1303-1312 ◽  
Author(s):  
Woo-Hyung Lee ◽  
Seon Kyoung Son ◽  
Kyoungkon Kim ◽  
Sang Kyu Lee ◽  
Won Suk Shin ◽  
...  

2015 ◽  
Vol 6 (42) ◽  
pp. 7436-7446 ◽  
Author(s):  
Shuang Li ◽  
Tao Yuan ◽  
Guoli Tu ◽  
Jian Zhang ◽  
Zhen Li

Photovoltaic cells based on the two-dimensional quinoxaline-based polymers,P2andP3, exhibited PCEs of over 3% compared to the PCE of less than 2% in theP1-based device.


Author(s):  
H. A. Vodden ◽  
J. L. Williams

The requirements of the semi-conductor industry for manufacturing devices such as transistors and rectifiers have resulted in new standards of purity for certain materials. Ultra-pure silicon is now produced commercially, with impurity levels lower than 1 part in 1010, in single crystal form of high structural perfection. This paper describes such a material, laying particular emphasis on the electrical properties, and describes methods by which it is manufactured commercially. The importance of electrically active impurities, such as boron and phosphorus, is discussed with reference to the p-type and n-type conductivities which are thereby introduced. The necessity for strict control of physical parameters during manufacture is emphasized, and methods used for the evaluation of the essential physical properties such as electrical resistivity and crystal structure are described. Some of the applications of pure silicon are introduced in this paper and the physical basis underlying the use of pure silicon in semi-conductor device manufacture is briefly reviewed.


2019 ◽  
Vol 7 ◽  
Author(s):  
Xiaolin Li ◽  
Jing Guo ◽  
Longfei Yang ◽  
Minghao Chao ◽  
Liping Zheng ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document