Dielectric Response of Light Emitting Semiconductor Junction Diodes: Frequency and Temperature Domain Study

2014 ◽  
Vol 1635 ◽  
pp. 49-54 ◽  
Author(s):  
Kanika Bansal ◽  
Shouvik Datta
Keyword(s):  
Quantum Well ◽  
Dielectric Response ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Light Output ◽  
Low Frequency ◽  
Carrier Injection ◽  
Light Emitting ◽  
Conventional Models ◽  
Modulated Light

ABSTRACTWe report a change in the dielectric response of AlGaInP based multi quantum well diodes with the onset of modulated light emission. Observed variation in junction capacitance and modulated light emission, with frequency and temperature, suggests participation of slow defect channels in fast radiative recombination dynamics. Our work establishes prominent connection between electrical and optical properties of light emitting diodes and provides a tool to investigate the interesting condensed matter physics of these structures. Our observations demand a generalized physical framework, beyond conventional models, to understand an active light emitting diode under charge carrier injection. We suggest that the low frequency response can compromise the performance of these diodes under high frequency applications. We also suggest how internal quantum well structure can affect modulated light output efficiency of the device.

scholarly journals Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1499
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang ◽  
Nadeem Nasir ◽  
Haris Mehmood ◽  
...  
Keyword(s):  
Quantum Well ◽  
Power Efficiency ◽  
Semiconductor Device ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Design Parameters ◽  
Diffusion Welding ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting

In the last decade, Silicon carbide (SiC) has emerged as a potential material for high-frequency electronics and optoelectronics applications that may require elevated temperature processing. SiC exists in more than 200 different crystallographic forms, referred to as polytypes. Based on their remarkable physical and electrical characteristics, such as better thermal and electrical conductivities, 3C-SiC, 4H-SiC, and 6H-SiC are considered as the most distinguished polytypes of SiC. In this article, physical device simulation of a light-emitting diode (LED) based on the unique structural configuration of 4H-SiC and 6H-SiC layers has been performed which corresponds to a novel material joining technique, called diffusion welding/bonding. The proposed single quantum well (SQW) edge-emitting SiC-based LED has been simulated using a commercially available semiconductor device simulator, SILVACO TCAD. Moreover, by varying different design parameters, the current-voltage characteristics, luminous power, and power spectral density have been calculated. Our proposed LED device exhibited promising results in terms of luminous power efficiency and external quantum efficiency (EQE). The device numerically achieved a luminous efficiency of 25% and EQE of 16.43%, which is at par performance for a SQW LED. The resultant LED structure can be customized by choosing appropriate materials of varying bandgaps to extract the light emission spectrum in the desired wavelength range. It is anticipated that the physical fabrication of our proposed LED by direct bonding of SiC-SiC wafers will pave the way for the future development of efficient and cost-effective SiC-based LEDs.

scholarly journals III-Nitride Multi-Quantum-Well Light Emitting Structures with Selective Carrier Injection

2019 ◽  
Vol 9 (18) ◽  
pp. 3872
Author(s):  
Hussein S. El-Ghoroury ◽  
Mikhail V. Kisin ◽  
Chih-Li Chuang
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Quantum Wells ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Carrier Injection ◽  
Light Emitting ◽  
Efficient Control ◽  
Multi Quantum Well

Incorporation into the multi-layered active region of a semiconductor light-emitting structure specially designed intermediate carrier blocking layers (IBLs) allows efficient control over the carrier injection distribution across the structure’s active region to match the application-driven device injection characteristics. This approach has been successfully applied to control the color characteristics of monolithic multi-color light-emitting diodes (LEDs). We further exemplify the method’s versatility by demonstrating the IBL design of III-nitride multiple-quantum-well (MQW) light-emitting diode with active quantum wells uniformly populated at LED operational current.

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

White light emission from a blue polymer light emitting diode combined with YAG:Ce3+ nanoparticles

2013 ◽  
Vol 211 (3) ◽  
pp. 651-655 ◽  
Author(s):  
Jorge Oliva ◽  
Elder De la Rosa ◽  
Luis Diaz-Torres ◽  
Anvar Zakhidov
Keyword(s):  
White Light ◽  
Light Emission ◽  
Light Emitting Diode ◽  
White Light Emission ◽  
Light Emitting ◽  
Polymer Light Emitting Diode

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array

2013 ◽  
Vol 38 (17) ◽  
pp. 3370 ◽  
Author(s):  
Horng-Shyang Chen ◽  
Yu-Feng Yao ◽  
Che-Hao Liao ◽  
Charng-Gan Tu ◽  
Chia-Ying Su ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Diode Array ◽  
Light Emitting ◽  
Patterned Growth
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