Native point defects in multicomponent transparent conducting oxides

2014 ◽  
Vol 1633 ◽  
pp. 37-42
Author(s):  
Altynbek Murat ◽  
Julia E. Medvedeva
Keyword(s):  
Oxygen Vacancy ◽  
Point Defects ◽  
Density Functional ◽  
Defect Formation ◽  
Conducting Oxides ◽  
Cation Vacancies ◽  
Native Point Defects ◽  
Wide Range ◽  
Growing Conditions ◽  
Donor Defect

ABSTRACTThe formation of native point defects in layered multicomponent InAMO4 oxides with A3+=Al or Ga, and M2+=Ca, Mg, or Zn, is investigated using first-principles density functional calculations. We calculated the formation energy of acceptor (cation vacancies, acceptor antisites) and donor (oxygen vacancy, donor antisites) defects within the structurally and chemically distinct layers of InAMO4 oxides. We find that the antisite donor defect, in particular, the A atom substituted on the M atom site (AM) in InAMO4 oxides, have lower formation energies, hence, higher concentrations, as compared to those of the oxygen vacancy which is know to be the major donor defect in binary constituent oxides. The major acceptor (electron “killer”) defects are cation vacancies except for InAlCaO4 where the antisite CaAl is the most abundant acceptor defect. The results of the defect formation analysis help explain the changes in the observed carrier concentrations as a function of chemical composition in InAMO4, and also why the InAlZnO4 samples are unstable under a wide range of growing conditions.

Theoretical Study of Native Point Defects in Aln and InN

1997 ◽  
Vol 482 ◽  
Author(s):  
C. Stampfl ◽  
Chris G. Van De Walle
Keyword(s):  
Point Defects ◽  
Density Functional ◽  
Defect Formation ◽  
Local Density ◽  
Nitrogen Vacancy ◽  
Type Material ◽  
Generalized Gradient ◽  
Native Point Defects ◽  
Zinc Blende ◽  
Formation Energies

AbstractWe have studied native point defects in AlN and InN using density-functional calculations employing both the local-density and generalized gradient approximations for the exchange-correlation functional. For both materials we find that the nitrogen vacancy acts as a compensating center in p-type material. For AIN in the zinc-blende structure, the aluminum interstitial has an equally low formation energy as the nitrogen vacancy. For n-type material the aluminum vacancy is the dominant compensating center in AlN. For n-type InN, all defect formation energies are high.

Hg1-xCdxTe: Defect Structure Overview

1990 ◽  
Vol 216 ◽  
Author(s):  
M.A. Berding ◽  
A. Sher ◽  
A.-B. Chen
Keyword(s):  
Point Defects ◽  
Defect Structure ◽  
Defect Formation ◽  
Activation Energies ◽  
Mass Action ◽  
Native Defect ◽  
Native Point Defects ◽  
Vacancy Migration ◽  
Formation Energies ◽  
Diffusion Activation

ABSTRACTNative point defects play an important role in HgCdTe. Here we discuss some of the relevant mass action equations, and use recently calculated defect formation energies to discuss relative defect concentrations. In agreement with experiment, the Hg vacancy is found to be the dominant native defect to accommodate excess tellurium. Preliminary estimates find the Hg antisite and the Hg interstitial to be of comparable densities. Our calculated defect formation energies are also consistent with measured diffusion activation energies, assuming the interstitial and vacancy migration energies are small.

Study on the optical spectra of the oxygen vacancy in ZnWO4 crystal

2021 ◽  
pp. 2150471
Author(s):  
Gaiping Lian ◽  
Tingyu Liu ◽  
Le Yu
Keyword(s):  
Oxygen Vacancy ◽  
Density Functional ◽  
Defect Formation ◽  
Finite Size ◽  
Optical Spectra ◽  
Functional Method ◽  
Hybrid Functional ◽  
Electron Phonon Coupling ◽  
Correction Scheme ◽  
The Density Functional Theory

ZnWO4 is easy to color, which will reduce the luminous efficiency of the crystal and limit the application of the crystal. In order to study the origin of the color in the crystal, in this paper, the effects of the oxygen vacancy on the optical properties for the ZnWO4 crystal have been studied based on the density functional theory (DFT). The hybrid functional method (HSE) and the finite-size correction scheme (FNV) are used to correct the band edge problem and eliminate the artificial interaction of the charged defects, respectively. On the basis of the corrected defect formation energy, we obtain the optical spectra of the [Formula: see text] and [Formula: see text] centers containing electron-phonon coupling. The calculated absorption and luminescence peaks are at 2.54 eV and 0.79 eV for the [Formula: see text] center and at 2.98 eV and 1.09 eV for the [Formula: see text] center, respectively. The calculated absorption band of the [Formula: see text] center is close to the experimental value of 2.48 eV (500 nm), so we speculate that the coloring of the ZnWO4 crystal is related to the [Formula: see text] center. Meanwhile, the existence of oxygen vacancy makes ZnWO4 crystal to have self-absorption and to increase decay time, which greatly affects the scintillation properties of the crystal.

Computational study of Mg insertion into amorphous silicon: advantageous energetics over crystalline silicon for Mg storage

2013 ◽  
Vol 1540 ◽  
Author(s):  
Fleur Legrain ◽  
Oleksandr I. Malyi ◽  
Teck L. Tan ◽  
Sergei Manzhos
Keyword(s):  
Density Functional ◽  
Nearest Neighbor ◽  
Defect Formation ◽  
Crystalline Silicon ◽  
Computational Study ◽  
Binding Energies ◽  
Functional Theory ◽  
Wide Range ◽  
Insertion Sites ◽  
Formation Energies

ABSTRACTWe show in a theoretical density functional theory study that amorphous Si (a-Si) has more favorable energetics for Mg storage compared to crystalline Si (c-Si). Specifically, Mg and Li insertion is compared in a model a-Si simulation cell. Multiple sites for Mg insertion with a wide range of binding energies are identified. For many sites, Mg defect formation energies are negative, whereas they are positive in c-Si. Moreover, while clustering in c-Si destabilizes the insertion sites (by about 0.1/0.2 eV per atom for nearest-neighbor Li/Mg), it is found to stabilize some of the insertion sites for both Li (by up to 0.27 eV) and Mg (by up to 0.35 eV) in a-Si. This could have significant implications on the performance of Si anodes in Mg batteries.

scholarly journals Native point defects in CuIn1−xGaxSe2: hybrid density functional calculations predict the origin of p- and n-type conductivity

2014 ◽  
Vol 16 (40) ◽  
pp. 22299-22308 ◽  
Author(s):  
J. Bekaert ◽  
R. Saniz ◽  
B. Partoens ◽  
D. Lamoen
Keyword(s):  
Charge Carrier ◽  
Point Defects ◽  
First Principles ◽  
Density Functional Calculations ◽  
Density Functional ◽  
First Principles Calculations ◽  
Photoluminescence Spectra ◽  
Type Conductivity ◽  
Native Point Defects ◽  
Hybrid Density Functional

Starting from first-principles calculations, many experimental observations such as photoluminescence spectra, charge carrier densities and freeze-out can be explained.

scholarly journals The Effect of Defect Disorder on the Electronic Structure of Rutile TiO2-x

2006 ◽  
Vol 251-252 ◽  
pp. 1-12 ◽  
Author(s):  
Faruque M. Hossain ◽  
Graeme E. Murch ◽  
L. Sheppard ◽  
Janusz Nowotny
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Point Defects ◽  
Density Functional ◽  
Defect Formation ◽  
Energy Levels ◽  
Defect Energy ◽  
Defect Disorder ◽  
Effect Of Oxygen ◽  
Formation Energies

The purpose of this work is to study the effect of bulk point defects on the electronic structure of rutile TiO2. The paper is focused on the effect of oxygen nonstoichiometry in the form of oxygen vacancies, Ti interstitials and Ti vacancies and related defect disorder on the band gap width and on the local energy levels inside the band gap. Ab initio density functional theory is used to calculate the formation energies of such intrinsic defects and to detect the positions of these defect induced energy levels in order to visualize the tendency of forming local mid-gap bands. Apart from the formation energy of the Ti vacancies (where experimental data do not exist) our calculated results of the defect formation energies are in fair agreement with the experimental results and the defect energy levels consistently support the experimental observations. The calculated results indicate that the exact position of defect energy levels depends on the estimated band gap and also the charge state of the point defects of TiO2.

First-principles study on the optical spectra of ZrO2 crystal with oxygen vacancy

2019 ◽  
Vol 33 (31) ◽  
pp. 1950372
Author(s):  
Rui Guo ◽  
Tingyu Liu ◽  
Yazhou Lu ◽  
Qiuyue Li ◽  
Xuping Jiao ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Density Functional ◽  
Defect Formation ◽  
Finite Size ◽  
Optical Spectra ◽  
Photocatalytic Ability ◽  
Luminescence Peak ◽  
Electron Phonon Coupling ◽  
Correction Scheme ◽  
F Center

In this paper, we present the optical spectra of the ZrO2 crystal containing oxygen vacancy based on the Density Functional Theory (DFT). The finite-size correction scheme (FNV) is employed to eliminate the artificial interactions and correct the defect formation energy of oxygen vacancies with three different charges (0, +1, +2). Besides, we use hybrid density functionals to relieve the band edge problem. Finally, we obtain the optical spectra for the F center and F[Formula: see text] center containing the electron–phonon coupling. The absorption peak of F center of threefold coordinate oxygen vacancy (V[Formula: see text]) near 446 nm (2.78 eV) agrees well with the experimental value (2.83 eV), which can enhance the visible light photocatalytic ability of ZrO2. The luminescence peak of the F[Formula: see text] center of fourfold coordinate oxygen vacancy (V[Formula: see text]) is 561 nm (2.21 eV), which is close to the experimental value (2.5 eV).

Electronic Structure of Native Point Defects in Zngep2

2003 ◽  
Vol 799 ◽  
Author(s):  
Xiaoshu Jiang ◽  
M. S. Miao ◽  
Walter R. L. Lambrecht
Keyword(s):  
Point Defects ◽  
Density Functional ◽  
Chemical Potential ◽  
Local Density ◽  
High Energy ◽  
Orbital Method ◽  
Full Potential ◽  
Epr Spectrum ◽  
Functional Theory ◽  
Native Point Defects

ABSTRACTFirst-principles calculations are presented for various native point defects in ZnGeP2 us-ing a full-potential linearized muffin-tin orbital method in the local density approximation to density functional theory. Under Zn-poor conditions, the lowest Gibbs energy defects are found to be the Gezn antisite and Vzn. The Vae is found to have high energy of formation under any chemical potential conditions and is unstable towards formation of a Vzn and ZnGe pair. It is shown that the V−Zn cannot account for the ALI EPR spectrum commonly associated with this vacancy and an alternative model consisting of a Vzn – GeZn – Vzn is tentatively proposed.

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